scholarly journals Transport properties of a single-molecular transistor at finite temperature

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Manasa Kalla ◽  
Narasimha Raju Chebrolu ◽  
Ashok Chatterjee

Abstract A single molecular transistor is considered in the presence of electron-electron interaction, electron-phonon interaction, an external magnetic field and dissipation. The quantum transport properties of the system are investigated using the Anderson-Holstein Hamiltonian together with the Caldeira-Leggett model that takes care of the damping effect. The phonons are first removed from the theory by averaging the Hamiltonian with respect to a coherent phonon state and the resultant electronic Hamiltonian is finally solved with the help of the Green function technique due to Keldysh. The spectral function, spin-polarized current densities, differential conductance and spin polarization current are determined.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Manasa Kalla ◽  
Narasimha Raju Chebrolu ◽  
Ashok Chatterjee

AbstractWe study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron–electron and electron–phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron–phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.


2020 ◽  
Author(s):  
Manasa Kalla ◽  
Narasimha Raju Chebrolu ◽  
Ashok Chatterjee

Abstract We study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron-electron and electron-phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron-phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.


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