scholarly journals Particle-in-Cell Simulation of the Measurement of Laser Wakefields with Raman Scattering of Probe Laser Light

2008 ◽  
Vol 3 ◽  
pp. 063-063
Author(s):  
Weimin ZHOU ◽  
Kunioki MIMA ◽  
Hideo NAGATOMO
1986 ◽  
Vol 64 (8) ◽  
pp. 993-997 ◽  
Author(s):  
A. Bruce Langdon

This paper discusses computer simulation of absorption and scattering of laser light, under conditions relevant to laboratory achievement of thermonuclear fusion by laser-driven inertial-confinement methods. We enumerate the principal absorption and scattering processes and their requirements for accurate mathematical modelling. The principal tool, so-called particle-in-cell simulation, tracks particles through electromagnetic fields calculated self-consistently from the charge and current densities of the particles themselves, external sources, and boundaries. Many references are given. Special attention is given to two-plasmon decay.


2013 ◽  
Vol 31 (4) ◽  
pp. 589-595 ◽  
Author(s):  
Shixia Luan ◽  
Wei Yu ◽  
Jingwei Wang ◽  
Mingyang Yu ◽  
Suming Weng ◽  
...  

AbstractLaser light trapping in cavities in near-critical density plasmas is studied by two-dimensional particle-in-cell simulation. The laser ponderomotive force can create in the plasma a vacuum cavity bounded by a thin overcritical-density wall. The laser light is self-consistently trapped as a half-cycle electromagnetic wave in the form of an oscillon-caviton structure until it is slowly depleted through interaction with the cavity wall. When the near-critical density plasma contains a preformed cavity, laser light can become a standing wave in the latter. The trapped light is characterized as multi-peak structure. The overdense plasma wall around the self-generated and preformed cavities induced by the laser ponderomotive force is found to be crucial for pulse trapping. Once this wall forms, the trapped pulse can hardly penetrate.


2020 ◽  
Vol 140 (6) ◽  
pp. 318-324
Author(s):  
Haruki Ejiri ◽  
Takashi Fujii ◽  
Akiko Kumada ◽  
Kunihiko Hidaka

2018 ◽  
Vol 924 ◽  
pp. 269-272 ◽  
Author(s):  
Shinichi Mae ◽  
Takeshi Tawara ◽  
Hidekazu Tsuchida ◽  
Masashi Kato

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.


2011 ◽  
Vol 182 (3) ◽  
pp. 564-569 ◽  
Author(s):  
W.W. Lee ◽  
T.G. Jenkins ◽  
S. Ethier

Author(s):  
Xiaomei Zhang ◽  
Toshiki Tajima ◽  
Deano Farinella ◽  
Youngmin Shin ◽  
Gerard Mourou ◽  
...  

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