scholarly journals Synthesis, structure and electrical properties of Li+-doped pyrochlore Gd2Zr2O7

2020 ◽  
Vol 7 (2) ◽  
pp. 51-60
Author(s):  
Irina A. Anokhina ◽  
Irina E. Animitsa ◽  
Anastasia F. Buzina ◽  
Vladimir I. Voronin ◽  
Vladimir B. Vykhodets ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Lattice Parameter ◽  
Lithium Content ◽  
Low Temperature Sintering ◽  
Hole Conductivity ◽  
Oxygen Ion Conductivity ◽  
Oxygen Ion ◽  
Wide Range

The pyrochlore Gd1.55Li0.45Zr2O6.55 was prepared by the solution and solid-state methods. The introduction of lithium in the Gd-sublattice led to decrease in the lattice parameter a = 10.4830(8) Å in comparison with Gd2Zr2O7 (a =10.5346(2) Å). Monitoring of the lithium content in the sample during heat treatments showed a loss of lithium at temperatures above 1100 °C, so, to maintain the stoichiometry of lithium the low temperature sintering methods are required. The sample Gd1.55Li0.45Zr2O6.55 exhibited a predominant oxygen-ion transport over a wide range of temperatures.  Although doping did not lead to an increase in the oxygen-ion conductivity compared to Gd2Zr2O7, it caused the suppression of the hole conductivity.

Low‐temperature sintering and electrical properties of BBSZ glass‐doped ZnO‐based multilayer varistors

2019 ◽  
Vol 17 (2) ◽  
pp. 722-727
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Rui Peng ◽  
Hua Su ◽  
Zhihua Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Low Temperature Sintering ◽  
Doped Zno

Method of High Active Preparation and Electrical Properties of CuFeO2 Delafossite-Type

2014 ◽  
Vol 979 ◽  
pp. 302-306 ◽  
Author(s):  
Chalermpol Rudradawong ◽  
Aree Wichainchai ◽  
Aparporn Sakulkalavek ◽  
Yuttana Hongaromkid ◽  
Chesta Ruttanapun
Keyword(s):  
Crystal Structure ◽  
Electrical Conductivity ◽  
Solid State ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Metal Powders ◽  
High Power Factor

In this paper, the CuFeO2compound were prepared by classical solid state reaction (CSSR) and direct powder dissolved solution (DPDS) method from starting material metal oxides and metal powders. Preparation of two methods shows that, direct powder dissolved solution faster recover phases than classical solid state reaction method. The fastest method gets from starting materials Cu and Fe metal powders, the electrical conductivity, Seebeck coefficient, carrier concentration and mobility are 10.68 S/cm, 244.59 μV/K, 12.86×1016cm-3and 494.96 cm2/V.s, respectively. In addition, each CuFeO2compounds were investigated on crystal structure and electrical properties. From XRD and SEM results, all samples have a crystal structure delafossite-typeand a large grain boundary more than 15 μm by electrical conductivity corresponds to grain boundary and lattice parameter: a increases. Within this paper, from above results exhibit that preparation CuFeO2from Cu and Fe by direct powder dissolved solution method most appropriate for thermoelectric oxide materials due to high active for preparation else high lattice strain and high power factor are 0.00052 and 0.64×10-4W/mK2, respectively.

Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

1993 ◽  
Vol 320 ◽  
Author(s):  
A. Lauwers ◽  
A. Vercaemst ◽  
M. Van Hove ◽  
K. Kyllesbech Larsen ◽  
R. Verbeeck ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bimetallic Layer ◽  
Temperature Resistivity

ABSTRACTIn this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

Microstructures and electrical properties of ZnO–V2O5–MnO2 varistors with low-temperature sintering

2016 ◽  
Vol 28 (2) ◽  
pp. 1909-1913
Author(s):  
Xiao Qu ◽  
Wei-Jie Sun ◽  
Mao-Hua Wang ◽  
Yong Chen ◽  
Han-Ping Zhang
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Low Temperature Sintering
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