Formation of thin film YBaCuO Superconductors from Cu/BaO/Y2O3 Layer Structures

1987 ◽  
Vol 99 ◽  
Author(s):  
Chin-An Chang ◽  
C. C. Tsuei ◽  
C. C. Chi ◽  
M. R. Scheuermann ◽  
D. S. Yee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Transition Temperatures ◽  
Phase Dependence ◽  
Annealing Temperatures ◽  
Layer Structures ◽  
Zero Resistance ◽  
Y2o3 Layer

ABSTRACTThin film superconductors of the YBaCuO family have been fabricated using layer structures of Cu/BaO/Y2O3 deposited by electron-beam evaporation. Using layer thicknesses off the stoichiometric YBa2Cu3O7, we have formed superconducting films with zero resistance above 77°K using MgO and SrTiO3 substrates. The films were found to be composed of both the superconducting YBa2Cu3O7 phase, and the non-superconducting green Y2BaCuO7 phase. Dependence of transition temperatures on the annealing temperatures and the substrates has also been studied.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Luminance Improvement of Red‐Emitting CaS : Eu Thin film Electroluminescent Cells Prepared by Electron Beam Evaporation

1989 ◽  
Vol 136 (9) ◽  
pp. 2736-2740 ◽  
Author(s):  
Ken‐ichi Onisawa ◽  
Kazuo Taguchi ◽  
Moriaki Fuyama ◽  
Katsumi Tamura ◽  
Yoshio Abe ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation

P-90: Permeation Properties of Inorganic Thin-Film and Its Application to PM-OLED using Electron Beam Evaporation System

2003 ◽  
Vol 34 (1) ◽  
pp. 563 ◽  
Author(s):  
Kwang Ho Kim ◽  
Hoon Kim ◽  
Hong Mo Koo ◽  
Jai Kyeong Kim ◽  
Young Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Permeation Properties

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

The composition and structure of TiNi thin film formed by electron beam evaporation

2000 ◽  
Vol 43 (9) ◽  
pp. 847-852 ◽  
Author(s):  
Hae Yong Noh ◽  
Kyu Hwan Lee ◽  
Xiang Xu Cui ◽  
Chong-Sool Choi
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Composition And Structure

scholarly journals Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
S. Habibi
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Thin Film Solar Cells ◽  
X Ray ◽  
Annealing Temperatures ◽  
Pure Cu ◽  
Deposited Films

CuInSe2(CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

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