Synthesis of R2 Fe14 B Single Crystals

1987 ◽  
Vol 96 ◽  
Author(s):  
B. N. Das ◽  
N. C. Koon

ABSTRACTSingle crystals of R2 Fe14 B weighing 5 to 15 g were grown from a liquid melt by tri-arc and levitation Czochralski methods. The arc method was used for the growth of smaller size crystals from 5 to 7 g, and the levitation method was used for the growth of larger sizes, from 10 to 15 g. Crystals of (R1)2 –x(R2)xFe14 B could also be grown with isomorphous replacement of rare earth atoms. The starting alloy composition for the crystal growth process was chosen based on solidification microstructure. In this paper we discuss the solidification microstructure, isomorphous replacement, seeding and their interactions with the crystal growth processes and crystal quality.

2009 ◽  
Vol 311 (16) ◽  
pp. 4116-4122 ◽  
Author(s):  
Zhengxin Liu ◽  
Atsushi Masuda ◽  
Michio Kondo

CrystEngComm ◽  
2021 ◽  
Author(s):  
Logan S Breton ◽  
Mark D. Smith ◽  
Hans-Conrad Zur Loye

Single crystals of new rubidium rare earth thiophosphates with the formulas Rb3Ln(PS4)2 (Ln = La, Pr, Ce), Rb3-xNaxLn(PS4)2 (Ln = Pr, Ce; x = 0.50, 0.55), and RbEuPS4 were crystallized...


Author(s):  
A. Molchanov ◽  
U. Hilburger ◽  
J. Friedrich ◽  
M. Finkbeiner ◽  
G. Wehrhan ◽  
...  

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  

2002 ◽  
Vol 25 (4) ◽  
pp. 570-576 ◽  
Author(s):  
Andrzej J Nowak ◽  
Ryszard A Białecki ◽  
Adam Fic ◽  
Gabriel Wecel ◽  
Luiz C Wrobel ◽  
...  

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces


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