Light-Induced Degradation and Annealing Behaviour of Amorphous Silicon: A Comparison of Films and Devices

1987 ◽  
Vol 95 ◽  
Author(s):  
M. S. Bennett ◽  
S. Wiedeman ◽  
K. Rajan ◽  
M. Smoot
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Annealing Behaviour ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Si Films ◽  
Staebler Wronski Effect ◽  
Kinetics Of

AbstractThe kinetics of the Staebler-Wronski effect in a-Si:H p-i-n solar cells are well known [1]. We report measurements of the kinetics of light-induced degradation and annealing of a-Si films in which we have monitored the changes in subgap absorption by means of photothermal deflection spectroscopy (PDS). The kinetics of films and cells are found to be very similar, suggesting that cell degradation is largely a material, as opposed to a device effect.

Spectral Response and Loss Mechanisms in Amorphous Silicon Solar Cells Determined by Photothermal Deflection Spectroscopy

1998 ◽  
Vol 507 ◽  
Author(s):  
N. Höhne ◽  
R. Carius ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Spectral Response ◽  
Operating Conditions ◽  
Thin Film Solar Cells ◽  
Silicon Solar Cells ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Carrier Separation ◽  
Set Up

ABSTRACTA new method to analyse the optical and thermal losses in amorphous silicon solar cells is presented. It is demonstrated that PDS measurements can provide important information on the losses that limit the performance of such cells. The major advantage of the method presented is the ability to determine parameters which are not accessible by other methods, i.e. the reflection, absorption without carrier separation, thermalization and losses in p- and n-layer, field losses, recombination and electrical gain of the solar cell under operating conditions. The method can be applied to thin film solar cells of all kinds complementary to DSR which can also be measured in the same set-up. Eliminating some experimental difficulties could lead to a new comprehensive and complementary characterisation method of solar cells of all kinds.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

1994 ◽  
Vol 336 ◽  
Author(s):  
K. Gaughan ◽  
J.M. Viner ◽  
P.C. Taylor
Keyword(s):  
Electrical Conductivity ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photothermal Deflection Spectroscopy ◽  
Optical And Electronic Properties ◽  
Photothermal Deflection

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

Optimization of Optoelectronic Properties of a-SiC:H Films

1993 ◽  
Vol 297 ◽  
Author(s):  
F. Demichelis ◽  
G. Crovini ◽  
C.F. Pirri ◽  
E. Tresso ◽  
R. Galloni ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Silicon Carbide ◽  
Ftir Spectroscopy ◽  
Amorphous Silicon ◽  
Reflectance Spectroscopy ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Photothermal Deflection Spectroscopy ◽  
Device Structures ◽  
Photothermal Deflection

Amorphous silicon carbide films have been deposited by PECVD in SiH4+CH4+H2 mixtures at different hydrogen dilutions. The optoelecuonic properties of the films have been measured by transmittance-reflectance spectroscopy, photothermal deflection spectroscopy and photo and dark electrical conductivity. Structural properties have been obtained by FTIR spectroscopy. It was found that high hydrogen dilution leads to materials of improved quality, p-i-n device structures have been deposited with intrinsic layers at different hydrogen dilution levels.

Sign in / Sign up

Export Citation Format

Share Document