Hydrogen Content and the Optical Bandgap in Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
K. M. H. Maessen ◽  
M. J. M. Pruppers ◽  
J. Bezemer ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogen Concentration ◽  
Hydrogen Content ◽  
Linear Dependence ◽  
Optical Bandgap ◽  
Silicon Films ◽  
Concentration Region

AbstractThe dependence of the optical bandgap on the hydrogen concentration is measured for amorphous silicon films prepared under different glow-discharge conditions. A deviation from the usually accepted linear dependence is found for hydrogen concentrations above 12 at.‰ We find that in this concentration region an increase of hydrogen incorporated as SiH2 is responsible for this behaviour.

Hydrogen Incorporation in A-Si:H: Temperature and Doping Type Dependence

1990 ◽  
Vol 192 ◽  
Author(s):  
M.J.M. Pruppers ◽  
K.M.H. Maessen ◽  
F.H.P.M. Habraken ◽  
J. Bezemer ◽  
W.F. Van Der Weg
Keyword(s):  
Activation Energy ◽  
Glow Discharge ◽  
Gas Phase ◽  
Hydrogen Concentration ◽  
Hydrogen Content ◽  
Hydrogen Incorporation ◽  
Undoped Material ◽  
Measured Activation Energy ◽  
Measured Activation ◽  
The Difference

ABSTRACTPhosphorus, boron and compensation doped hydrogenated amorphous silicon films were deposited in a glow discharge at different substrate temperatures in the range 50–330°C. Gas phase doping levels were 1%. At the lower temperatures the hydrogen concentration in the B doped and compensated doped films is larger than in the P and undoped films. For higher deposition temperatures the H concentration of the B doped films appeared to be smaller than in the other materials. The difference in hydrogen content of the doped and undoped material, deposited at various temperatures, is considered as a function of the measured activation energy for conduction in these films. This difference varies in much the same way with the activation energy as the hydrogen content in films deposited at one substrate temperature, but with varying gas phase dopant levels. This represents strong evidence that, apart from the deposition temperature, the hydrogen concentration in glow discharge a-Si:H is determined by the position of the Fermi level.

Determination of hydrogen concentration in amorphous silicon films by nuclear elastic scattering (NES) of 100 MeV 3He2+

1981 ◽  
Vol 38 (12) ◽  
pp. 1249-1251
Author(s):  
M. Iwami ◽  
T. Imura ◽  
A. Hiraki ◽  
T. Itahashi ◽  
T. Fukuda ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Amorphous Silicon ◽  
Hydrogen Concentration ◽  
Silicon Films

scholarly journals Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

AIP Advances ◽  
2014 ◽  
Vol 4 (5) ◽  
pp. 057122 ◽  
Author(s):  
Yaser Abdulraheem ◽  
Ivan Gordon ◽  
Twan Bearda ◽  
Hosny Meddeb ◽  
Jozef Poortmans
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Optical Bandgap ◽  
Silicon Films

Hydrogen content and optical properties of LPCVD amorphous silicon films

1985 ◽  
Vol 77-78 ◽  
pp. 575-578 ◽  
Author(s):  
C. Manfredotti ◽  
G. Scarano ◽  
G. Della Mea ◽  
C. Rossi Alvarez
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Silicon Films

AC conduction in glow-discharge amorphous silicon films

1977 ◽  
Vol 24 (1) ◽  
pp. 137-140 ◽  
Author(s):  
S. Nitta ◽  
K. Shimakawa ◽  
K. Sakaguchi
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Ac Conduction

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

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