Molecular Dynamics Studies of the Adatom Induced Rearrangement of the Silicon {100} Surface
Keyword(s):
ABSTRACTA molecular dynamics simulation of the silicon adatom induced rearrangement of the silicon {100} symmetric dimer reconstructed surface has been performed. Surface diffusion is proposed to play a critical role in the reordering of this surface which leads to good epitaxy while it plays much less of a role in the reordering induced by an amorphous overlayer. These results are used to provide atomic-scale models which are consistent with high-energy ion channeling/blocking and LEED studies by Gossman and Feldman of the initial stages of silicon growth on this surface.
2016 ◽
Vol 120
(7)
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pp. 1367-1379
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1987 ◽
Vol 138
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pp. 149-152
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2014 ◽
Vol 620
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pp. 61-66
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2016 ◽
Vol 683
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pp. 626-631
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2000 ◽
Vol 61
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pp. 14007-14019
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