Ion Beam Mixing of Au-Ti

1987 ◽  
Vol 93 ◽  
Author(s):  
E. L. Fleischer ◽  
J. W. Mayer ◽  
J-P. Hirvonen
Keyword(s):  
Corrosion Resistance ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Pure Titanium ◽  
Ion Beam Mixing ◽  
Amorphous Phases ◽  
Friction Testing ◽  
Transmission Electron ◽  
Wear And Friction

ABSTRACTMulti-layered films of Ti-Au of linearly varying composition were produced by ion irradiation using 600 KeV Ar++ ions. Rutherford Backscattering Spectrometry showed that mixing was complete. The microstructure observed by transmission electron microscopy consisted of a combination of crystalline and amorphous phases at the Ti-rich end and of a crystalline fcc Au solid solution at the Au-rich end. Corrosion testing in a simple immersion cell revealed remarkable corrosion resistance of the ion beam mixed sample compared to that of pure titanium or as-deposited Ti-Au samples (from 100%Au to 60%Ti-40%Au). Wear and friction testing was performed using a reciprocal sliding apparatus with a polytetrafluoroethylene (PTFE) pin. A composition of 60%Ti-40%Au was chosen as optimal for improved corrosion resistance without appreciable degradation in wear and friction properties.

Comparison Between Ion-Beam and Thermal-Annealing Induced Solid Phase Epitaxy in Fe-Implanted Si

1993 ◽  
Vol 320 ◽  
Author(s):  
X.W. Lin ◽  
J. Desimoni ◽  
H. Bernas ◽  
Z. Liliental-Weber ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Thermally Induced ◽  
Transmission Electron ◽  
Visible Effect

Rutherford backscattering spectrometry and transmission electron microscopy were used to compare thermally induced solid phase epitaxy (SPE) with ion-beam induced epitaxial crystallization (IBIEC) of Fe-implanted Si (001). It was found that thermal annealing leads to both Si SPE and β-FeSi2 precipitation at 520°C, but has no visible effect at 320°C. In contrast, Si SPE and FeSi2 precipitation occur at both 320 and 520°C, when ion irradiation is introduced. The precipitates grow epitaxially as γ-FeSi2 at 320°C, but consist of both β-FeSi2 and γ-FeSi2 at 520°C. It was also found that thermal annealing at 520°C results in Fe segregation toward the surface, while IBIEC basically retains the as-implanted Fe profile.

Nuclear Reactions in Deuterium Titanium

1990 ◽  
Vol 48 (2) ◽  
pp. 134-135
Author(s):  
D.M. Vanderwalker
Keyword(s):  
Nuclear Reactions ◽  
Ion Beam ◽  
Exothermic Reaction ◽  
Pure Titanium ◽  
Fundamental Interest ◽  
Transmission Electron ◽  
Iodide Titanium ◽  
A Cell ◽  
After Hours ◽  
Quantity Of Heat

There is a fundamental interest in electrochemical fusion of deuterium in palladium and titanium since its supposed discovery by Fleischmann and Pons. Their calorimetric experiments reveal that a large quantity of heat is released by Pd after hours in a cell, suggesting fusion occurs. They cannot explain fusion by force arguments, nor can it be an exothermic reaction on the formation of deuterides because a smaller quantity of heat is released. This study examines reactions of deuterium in titanium.Both iodide titanium and 99% pure titanium samples were encapsulated in vacuum tubes, annealed for 2h at 800 °C. The Ti foils were charged with deuterium in a D2SO4 D2O solution at a potential of .45V with respect to a calomel reference junction. Samples were ion beam thinned for transmission electron microscopy. The TEM was performed on the JEOL 200CX.The structure of D charged titanium is α-Ti with hexagonal and fee deuterides.

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

2012 ◽  
Vol 167 (7) ◽  
pp. 506-511 ◽  
Author(s):  
G. Devaraju ◽  
S. V.S. Nageswara Rao ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
T. K. Chan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Mixing Effects ◽  
Swift Heavy Ion ◽  
Lattice Matched

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Enthalpy Of Mixing ◽  
High Energy ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Metal Insulator ◽  
Transmission Electron

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

scholarly journals Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Müller ◽  
M. L. Jenkins ◽  
C. Abromeit ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Small Population ◽  
Dislocation Loops ◽  
Near Surface ◽  
Ion Energy ◽  
Heavy Ion Irradiation ◽  
Transmission Electron

AbstractStereo transmission electron microscopy has been used to characterise the distribution in depth of disordered zones and associated dislocation loops in the ordered alloys Ni3Al and Cu3Au after heavy ion irradiation, most extensively for Ni3Al irradiated with 50 keV Ta+ ions at a temperature of 573 K. The Cu3Au specimen was irradiated with 50 keV Ni+ ions at an incident angle of 45° at a temperature of 373 K. In Ni3Al the defect yield, i.e. the probability for a disordered zone to contain a loop was found to be strongly dependent on the depth of the zone in the foil, varying from about 0.7 for near-surface zones to about 0.2 in the bulk. The sizes and shapes of disordered zones were only weakly dependent on depth, except for a small population of zones very near the surface which were strongly elongated parallel to the incident ion beam. In Cu3Au the surface had a smaller but still significant effect on the defect yield. The dependence of the tranverse disordered zone diameter d on ion energy E for Ta+ irradiation of NiA was found to follow a relationship d = k1, E1/α with k, = 2.4 ± 0.4 and α = 3.3 ± 0.4. A similar relationship with the same value of α is valid for a wide variety of incident ion/target combinations found in the literature.

Ion beam mixing of ZnO/SiO2 and Sb/Ni/Si interfaces under swift heavy ion irradiation

2002 ◽  
Vol 91 (3) ◽  
pp. 1129-1134 ◽  
Author(s):  
Saskia Kraft ◽  
Beate Schattat ◽  
Wolfgang Bolse ◽  
Siegfried Klaumünzer ◽  
Felix Harbsmeier ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

Formation of dense and aligned planar arrangements of Pb nanoparticles at silica/silicon interfaces

2011 ◽  
Vol 1308 ◽  
Author(s):  
Flavia P. Luce ◽  
Felipe Kremer ◽  
Dario F. Sanchez ◽  
Zacarias E. Fabrim ◽  
Shay Reboh ◽  
...  
Keyword(s):  
High Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Aging Treatment ◽  
High Temperature Short Time ◽  
Transmission Electron ◽  
Long Time ◽  
Size Dispersion ◽  
Short Time ◽  
Silicon Interface

ABSTRACTThe ion beam synthesis of Pb nanoparticles (NPs) in silica/silicon films is studied in terms of the combination of a two-step annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time furnace annealing. The samples are analyzed through Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. The aging process leads to the suppression of the classical homogeneous nucleation of metallic Pb NPs in the silica, thus promoting Pb redistribution during the high temperature annealing. This causes the formation of dense bi-dimensional NP arrays located at the silica-silicon interface, presenting small size dispersion.

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