Formation of Silicon-On-Insulator Structures by Multiple Oxygen Implantations

1987 ◽  
Vol 93 ◽  
Author(s):  
S. N. Bunker ◽  
P. Sioshansi ◽  
S. P. Tobin
Keyword(s):  
Defect Density ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocation ◽  
Oxygen Ion ◽  
Dislocation Defect ◽  
Buried Layers ◽  
High Doses ◽  
Processing Techniques ◽  
Oxygen Ion Implantation

ABSTRACTHigh dose oxygen ion implantation into silicon is an established method to form buried insulating layers. The material produced by standard processing techniques typically exhibits buried layers which are a few hundred nanome ers thick with a threading dislocation defect density on the order of 108/cm2. Unusual structures can be obtained by using repetitive cycles of partial doses of ions followed by annealing and possibly epitaxial growth. Both low and high doses may be used, the former intended to provide decreased defect density and the latter to increase the thickness of the buried layer above the theoretical maximum for higher voltage isolation. The material properties resulting from several variations of this technique are described and characterized.

Optical Reflectometry for Detailed Modeling of Buried Layers in Silicon-on-Insulator

1987 ◽  
Vol 93 ◽  
Author(s):  
S. N. Bunker ◽  
P. Sioshansi ◽  
M. M. Sanfacon ◽  
S. P. Tobin
Keyword(s):  
Ion Implantation ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
High Dose ◽  
Layer Depth ◽  
Oxygen Ion ◽  
Optical Reflectometry ◽  
Buried Layers ◽  
Oxygen Ion Implantation ◽  
Selection Of

ABSTRACTOptical reflectometry has been used to describe the morphology of buried layers by high dose oxygen ion implantation into silicon. Previous work has demonstrated that the layer depth, thickness, and shape of surrounding regions with a graded concentration of oxygen can be successfully modeled when compared to SIMS and XTEM. A selection of nomographs for analyzing spectra resulting from conventional implant conditions as a function of dose and screen oxide thickness are presented.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
R.F. Pinizzotto ◽  
B.L. Vaandrager ◽  
H.W. Lam
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Ion Implantation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

ABSTRACTCross-sectional and plan view transmission electron microscopy and high resolution scanning electron microscopy have been used to characterize the microstructure of silicon-on-insulator formed by high dose oxygen ion implantation. The complete microstructure was observed to be composed of a series of distinct zones. The top silicon layer was {100} single crystal with a very low dislocation density. The second layer was a mixture of fine grained polysilicon and amorphous SiO2. The third layer was pure SiO2 , followed by a second mixed layer. Finally, there was a layer of {100} silicon with an extremely high dislocation density. Some of the dislocations extended as far as 1 μm into the Si substrate. The relative widths of the layers were found to depend on the total ion fluence. The oxide layer did not occur for low doses and the two mixed layers merged into one zone. At high doses, the silicon-silicon dioxide interfaces are abrupt due to internal oxidation.

scholarly journals Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

1997 ◽  
Vol 82 (8) ◽  
pp. 3730-3735 ◽  
Author(s):  
J. Macı́a ◽  
E. Martı́n ◽  
A. Pérez-Rodrı́guez ◽  
J. Jiménez ◽  
J. R. Morante ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Microstructural Analysis ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Analysis of buried layers from high dose oxygen ion implantation

1987 ◽  
Vol 21 (1-4) ◽  
pp. 148-150 ◽  
Author(s):  
S.N. Bunker ◽  
P. Sioshansi ◽  
M. Sanfacon ◽  
A. Mogro-Campero ◽  
G.A. Smith
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Oxygen Ion ◽  
Buried Layers ◽  
Oxygen Ion Implantation

Silicon on Insulator by High Dose Implantation

1984 ◽  
Vol 33 ◽  
Author(s):  
P. L. F. Hemment
Keyword(s):  
Physical Properties ◽  
Thermal Processing ◽  
Vlsi Circuits ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Current ◽  
Processing Technologies ◽  
Oxygen Ions ◽  
High Doses ◽  
High Dose Implantation

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

Defect Engineering for SIMOX Processing

2007 ◽  
Vol 131-133 ◽  
pp. 339-344 ◽  
Author(s):  
Reinhard Kögler ◽  
A. Mücklich ◽  
W. Anwand ◽  
F. Eichhorn ◽  
Wolfgang Skorupa
Keyword(s):  
Silicon On Insulator ◽  
Oxide Growth ◽  
Defect Engineering ◽  
Promising Technique ◽  
Crucial Point ◽  
Vacancy Defects ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Very High ◽  
Established Technique

SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is shown to be a promising technique of defect engineering. The additional He implant does not initiate oxide growth in the top-Si layer of SOI.

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