Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111)
ABSTRACTSingle crystal type A and type B CoxNi1-xSi2 layers have been grown on Si(111) by deposition of Co-Ni alloy in UHV and annealing. The dependence of CoxNi1-xSi2 layer orientation on the thickness of deposited metal is similar to that observed for pure nickel reaction. Silicon deposition along with the Co-Ni alloy allows the growth of type B oriented CoxNi1-xSi2. Auger, LEED, RBS and TEM analyses suggest that the composition of the ternary silicide layers is inhomogeneous. The advantages and disadvantages of this material in device application will be briefly discussed.
1994 ◽
Vol 30
(6)
◽
pp. 143-149
◽