Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

1987 ◽  
Vol 91 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara ◽  
S. Furukawa
Keyword(s):  
Alkaline Earth ◽  
Electron Beam Irradiation ◽  
Growth Characteristics ◽  
Beam Irradiation ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Gaas Films ◽  
Annealing Effects

ABSTRACTHeteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si is first discussed. Then the usefulness of novel heteroepitaxial technologies, the predeposition method and the electron beam irradiation method, is demonstrated in the growth of Si and Ge films on CaF2/Si structures. Finally fundamental growth characteristics of GaAs films on CaF2/Si structures and annealing effects on the crystallinity of the GaAs films are described.

Formation of Epitaxial Soi Structures Using Alkaline Earth Fltuoride Films

1985 ◽  
Vol 53 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Tanemasa Asano
Keyword(s):  
Alkaline Earth ◽  
Room Temperature ◽  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Device Applications

ABSTRACTRecent progress in the research of heteroepitaxial SOI structures such as Si/CaF2/Si and Ge/CaF2/Si structures is reviewed. Structural and electrical properties of alkaline earth fluoride films on Si substrates are first discussed. Growth conditions, structural properties, and device applications of the Si/CaF2/Si structures are then presented. It is shown that a predeposition technique, in which a thin Si layer is deposited at room temperature prior to the growth of a thick film at elevated temperature, is effective to improve the crystalline quality and the surface morphology of the film. Usefulness of solid phase epitaxy to obtain high quality films is also demonstrated. Finally, it is shown that the predeposition technique is also useful in formation of Ge/CaF2/Si structures.

scholarly journals Calorimetric and Spectroscopic Studies of Water Adsorption onto Alkaline Earth Fluorides

2005 ◽  
Vol 23 (6) ◽  
pp. 425-436
Author(s):  
Toshinori Mori ◽  
Yasushige Kuroda ◽  
Ryotaro Kumashiro ◽  
Koji Hirata ◽  
Hidehiro Toyota ◽  
...  
Keyword(s):  
Alkaline Earth ◽  
Water Adsorption ◽  
Adsorbed Water ◽  
Spectroscopic Studies ◽  
Water Molecules ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Pretreatment Temperature ◽  
Argon Adsorption ◽  
Ir Bands

Interactions between the surfaces of alkaline earth fluorides (CaF2, SrF2 and BaF2) and water molecules were investigated by calorimetric and spectroscopic methods. The exposed surfaces of the alkaline earth fluoride samples, with which the (100) crystalline plane is mainly associated, were found to be fully covered with strongly adsorbed water molecules, resulting in characteristic IR bands at 3684, 2561, 1947 and 1000 cm−1, respectively. This surface was homogeneous towards further water adsorption. The strongly adsorbed water molecules were almost completely desorbed from the surface on evacuating the sample up to 473 K. The heat of immersion in water also increased with increasing pretreatment temperature; this may be attributed to surface rehydration of the alkaline earth fluorides. The state of the surface changed drastically as the pretreatment temperature was increased and stabilized towards incoming water molecules. Thus, the surface formed after evacuation at temperatures greater than 473 K was resistant to hydration even after immersion in water at room temperature. This surface was relatively heterogeneous towards water adsorption, although it behaved homogeneously towards argon adsorption. These facts indicate that strongly adsorbed water molecules appear to be somewhat specific towards the adsorption of further incoming water molecules. The adsorption properties of the (100) plane of alkaline earth fluorides towards water and argon molecules depend strongly on both the electrostatic field strength and the extent of rehydration of the alkaline earth fluoride surface.

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