Band Structure and Electronic Excitations in Cdl-xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Su-Huai Wei ◽  
Alex Zunger

AbstractWe have performed spin-polarized, self-consistent local spin density total energy and band structure calculations for the prototype semimagnetic semiconductor alloy Cd1-xMnxTe. Based on the calculated band structures and taking into account the many body effects of localized states, we propose a schematic energy level diagram to interpret the d→d*, p→d, and photoemission transitions in Cd1-xMnxTe.

1991 ◽  
Vol 231 ◽  
Author(s):  
Dennis P. Clougherty ◽  
M. E. Mchenry ◽  
J. M. Maclaren

AbstractUsing ab-initio spin-polarized layer Korringa-Kohn-Rostoker (LKKR) band structure calculations, we investigated the possibility of having a stable ferromagnetic ground state in 4d transition metal (TM)–Ag(001) sandwiches (TM = Tc, Ru, Rh, and Pd). In contrast to recent calculations performed on systems with TM overlayers on Ag (001), we find that the TM sandwich configuration gives a paramagnetic ground state. While excellent agreement in general is obtained for the layer-projected densities of states (LDOS), the sandwich configuration lowers the densities of states at the Fermi energy (EF) in the case of Rh and Ru by a small amount which seemingly prevents the marginal ferromagnetic instability predicted by Eriksson et. al. (Phys. Rev. Lett. 66, 1350 (1991)) from occurring.


2008 ◽  
Vol 77 (7) ◽  
Author(s):  
R. J. O. Mossanek ◽  
A. Mocellin ◽  
M. Abbate ◽  
B. G. Searle ◽  
P. T. Fonseca ◽  
...  

1979 ◽  
Vol 20 (8) ◽  
pp. 3172-3185 ◽  
Author(s):  
J. R. Anderson ◽  
D. A. Papaconstantopoulos ◽  
L. L. Boyer ◽  
J. E. Schirber

2001 ◽  
Vol 692 ◽  
Author(s):  
Yong Zhang ◽  
B. Fluegel ◽  
M. Hanna ◽  
A. Duda ◽  
A. Mascarenhas

AbstractIsoelectronic impurity nitrogen atoms have been found to generate a series of localized states in GaP and GaAs. These states can be either bound (within the band gap) or resonant (above the band gap) when in the dilute doping limit (roughly < 1019 cm−3 for GaP and < 1018 cm−3 for GaAs). With increasing nitrogen doping level, a shift of the absorption edge from the binary band gap has been observed for the so-called GaPN or GaAsN alloy. We discuss the similarity and dissimilarity between the two systems in the following aspects: (1) How does the nitrogen doping perturb the host band structure? (2) How do the nitrogen bound states evolve with increasing nitrogen doping level? (3) What are the dominant contributors to the band edge absorption? And (4) does a universal model exist for GaPN and GaAsN? Other issues that will be discussed are: how does one define the band gap for these materials, and what is the relevance of various theoretical band structure calculations to the experimentally measured parameters.


2021 ◽  
Vol 103 (8) ◽  
Author(s):  
M. Naumann ◽  
P. Mokhtari ◽  
Z. Medvecka ◽  
F. Arnold ◽  
M. Pillaca ◽  
...  

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