Thin Film on ASIC (TFA) - A Technology for Advanced Image Sensor Applications

2005 ◽  
Vol 869 ◽  
Author(s):  
Juergen Sterzel ◽  
Frank Blecher
Keyword(s):  
Dark Current ◽  
Crystalline Silicon ◽  
Three Dimensional ◽  
Light Level ◽  
Image Sensor ◽  
Image Sensors ◽  
Current Sensitivity ◽  
Low Light ◽  
Sensor Applications ◽  
Pattern Noise

AbstractThanks to its three-dimensional integration and the use of amorphous as well as crystalline silicon, the TFA technology is suitable for advanced image sensor applications. This paper describes the fundamentals of the properties: sensitivity, dark current, temporal and fixed-pattern noise of these TFA image sensors. It compares the different sensitivity definitions, especially current sensitivity and the charge conversion factor. Further, the dark current sources are pointed out, and their temperature behavior is described. By noise calculations, different pixel input stages are compared with regard to low light level detection.

An Opto-Electronic Image Sensor Using for Low-Light-Level in Neutron Digital Radiography(n-DR)

2012 ◽  
Vol 605-607 ◽  
pp. 1934-1938
Author(s):  
Ai Min Zhang ◽  
Biao Wei ◽  
Peng Feng ◽  
De Ling Mi ◽  
Yong Ren
Keyword(s):  
Image Quality ◽  
Imaging System ◽  
Coupling Efficiency ◽  
Image Intensifier ◽  
Light Level ◽  
Image Sensor ◽  
Image Sensors ◽  
Low Light ◽  
Key Technology ◽  
Grin Lens

ICCD is one of the opto-electronic image sensors, commonly used in neutron low-light-level imaging system and the coupling of CCD and Image-Intensifier is the key technology in ICCD. This paper discussed the structure of ICCD, and simulated the coupling of relay lens, cone fibers and grin lens based on ZEMAX. We analyzed and checked their parameters such as geometric image, MTF, coupling efficiency, etc. Experimental results show that: The coupling of relay lens has high image quality; the coupling of cone fibers has high coupling efficiency; the performance of grin lens falls in between.

TFA Image Sensors for Low Light Level Detection

2002 ◽  
Vol 715 ◽  
Author(s):  
Jürgen Sterzel ◽  
Frank Blecher ◽  
Matthias Hillebrand ◽  
Bernd Schneider ◽  
Markus Böhm
Keyword(s):  
Fold Increase ◽  
Light Level ◽  
Image Sensors ◽  
Conversion Gain ◽  
Low Light ◽  
Cmos Image Sensors ◽  
Pattern Noise ◽  
Photo Detectors ◽  
New Applications ◽  
Silicon Based

AbstractTFA technology, using ASICs coated with amorphous silicon based photo detectors, opens new applications for CMOS image sensors. One particular field of interest is the detection of low light level images with pixel photocurrents in the femtoampere range and below. In this paper we describe the effects of the capacitances on the pixel amplifier, we derive noise values for the detector and the amplifier, and we estimate the gain fixed pattern noise level. An inverter circuit providing a 40-fold increase of the charge conversion gain is presented.

Low-light-level three-dimensional video microscope with long working distance objective lenses

1994 ◽  
Vol 52 ◽  
pp. 226-227
Author(s):  
W. Lin ◽  
J. Gregorio ◽  
T.J. Holmes ◽  
D. H. Szarowski ◽  
J.N. Turner
Keyword(s):  
Three Dimensional ◽  
Light Level ◽  
Stereo Pair ◽  
Light Illumination ◽  
Initial Image ◽  
Low Light ◽  
Image Recording ◽  
Depth Discrimination ◽  
Video Microscope ◽  
Working Distance

A low-light level video microscope with long working distance objective lenses has been built as part of our integrated three-dimensional (3-D) light microscopy workstation (Fig. 1). It allows the observation of living specimens under sufficiently low light illumination that no significant photobleaching or alternation of specimen physiology is produced. The improved image quality, depth discrimination and 3-D reconstruction provides a versatile intermediate resolution system that replaces the commonly used dissection microscope for initial image recording and positioning of microelectrodes for neurobiology. A 3-D image is displayed on-line to guide the execution of complex experiments. An image composed of 40 optical sections requires 7 minutes to process and display a stereo pair.The low-light level video microscope utilizes long working distance objective lenses from Mitutoyo (10X, 0.28NA, 37 mm working distance; 20X, 0.42NA, 20 mm working distance; 50X, 0.42NA, 20 mm working distance). They provide enough working distance to allow the placement of microelectrodes in the specimen.

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

A Large Area TDI Image Sensor for Low Light Level Imaging

1980 ◽  
Vol 15 (4) ◽  
pp. 753-758 ◽  
Author(s):  
M.G. Farrier ◽  
R.H. Dyck
Keyword(s):  
Light Level ◽  
Image Sensor ◽  
Large Area ◽  
Low Light

scholarly journals Artificial eye for scotopic vision with bioinspired all-optical photosensitivity enhancer

2016 ◽  
Vol 113 (15) ◽  
pp. 3982-3985 ◽  
Author(s):  
Hewei Liu ◽  
Yinggang Huang ◽  
Hongrui Jiang
Keyword(s):  
Three Dimensional ◽  
Image Sensors ◽  
Imaging Systems ◽  
Light Conditions ◽  
Artificial Eye ◽  
Low Light ◽  
Scotopic Vision ◽  
All Optical ◽  
Retinal Structure ◽  
High Photosensitivity

The ability to acquire images under low-light conditions is critical for many applications. However, to date, strategies toward improving low-light imaging primarily focus on developing electronic image sensors. Inspired by natural scotopic visual systems, we adopt an all-optical method to significantly improve the overall photosensitivity of imaging systems. Such optical approach is independent of, and can effectively circumvent the physical and material limitations of, the electronics imagers used. We demonstrate an artificial eye inspired by superposition compound eyes and the retinal structure of elephantnose fish. The bioinspired photosensitivity enhancer (BPE) that we have developed enhances the image intensity without consuming power, which is achieved by three-dimensional, omnidirectionally aligned microphotocollectors with parabolic reflective sidewalls. Our work opens up a previously unidentified direction toward achieving high photosensitivity in imaging systems.

Digital TDI Technology Based on Global Shutter sCMOS Image Sensor for Low-Light-Level Imaging

2018 ◽  
Vol 38 (9) ◽  
pp. 0911001
Author(s):  
张元涛 Zhang Yuantao ◽  
柴孟阳 Chai Mengyang ◽  
孙德新 Sun Dexin ◽  
刘银年 Liu Yinnian
Keyword(s):  
Light Level ◽  
Image Sensor ◽  
Low Light
Sign in / Sign up

Export Citation Format

Share Document