Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix

2005 ◽  
Vol 864 ◽  
Author(s):  
R. Peleshchak ◽  
O. Kuzyk ◽  
H. Khlyap
Keyword(s):  
Electrostatic Potential ◽  
Chemical Potential ◽  
Theoretical Calculations ◽  
Schroedinger Equation ◽  
Electrostatic Potential Distribution ◽  
The Poisson Equation ◽  
Current Voltage ◽  
Consistent Solution ◽  
Current Voltage Characteristics ◽  
Crystalline Matrix

AbstractThe paper reports results of theoretical calculations of the redistribution of electrons and electrostatic potential in the implanted crystalline matrix (100)-GaAs+Si(Ar) due to electrondeformation effects. The model requires a self-consistent solution of the set of following equations: 1)the time-independent Schroedinger equation; 2) the equation of mechanical equilibrium: 3) the Poisson equation for determining electrostatic potential distribution; 4) the equation for calculation of the electron concentration, and 5) the equation for the chemical potential calculation in the implanted system. The most important result is: it is shown that in the elastic region of the implanted matrix n-n+-junction is formed. Current-voltage characteristics of the junction are numerically simulated.

Metastable Defect Distributions in CIGS Solar Cells and Their Impact on Device Efficiency

2007 ◽  
Vol 1012 ◽  
Author(s):  
Malgorzata Igalson
Keyword(s):  
Carrier Transport ◽  
Theoretical Calculations ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Device Efficiency ◽  
Current Voltage Characteristics ◽  
Cigs Solar Cells ◽  
Metastable Effects ◽  
The Impact ◽  
Metastable Defect

AbstractMetastabilities in the electrical characteristics of CIGS devices are commonly observed phenomena originating from persistent changes of shallow and deep levels distributions within the absorber. We examine characteristic changes induced by voltage bias and light together with their relaxation behavior and interpret them as the consequences of a negative-U type of centers predicted by theoretical calculations of Lany and Zunger. It is shown how the properties of these centers justify a model of p+ layer explaining specific features of light and dark current-voltage characteristics. The discussion showing the impact of various charge distributions on carrier transport is presented. The arguments are provided, that centers responsible for metastable effects are also to blame for majority of photovoltaic losses exhibited in various devices.

Effects of energy dependence in the electronic density of states on some superconducting properties

1983 ◽  
Vol 61 (5) ◽  
pp. 784-801 ◽  
Author(s):  
B. Mitrović ◽  
J. P. Carbotte
Keyword(s):  
Energy Dependence ◽  
Density Of States ◽  
Chemical Potential ◽  
Numerical Solutions ◽  
Tunneling Conductance ◽  
Eliashberg Equations ◽  
Electronic Density ◽  
Electronic Density Of States ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the influence of energy dependence in the electronic density of states (EDOS) on the single particle tunneling characteristics into a superconductor. The Migdal–Eliashberg equations generalized to the case of a nonconstant EDOS are derived. Three equations are involved, one for the gap, another for the renormalization function, and a new one for the chemical potential shift which does not appear in the conventional formulation. Numerical solutions of these equations are obtained, from which current voltage characteristics are calculated for a model EDOS. The "inversion" of the calculated tunneling conductance shows that the effects of the peaks in the EDOS, on the scale of several Debye energies are important and cannot necessarily be reproduced within the usual Eliashberg theory by working with some effective value of electron–phonon spectral density α2(ω)F(ω) and/or Coulomb parameter μ* without introducing unphysical features to these parameters.

scholarly journals Calculation of 4H-SiC Schottky Diode with Breakdown Voltage Up to 3 KV

2018 ◽  
Vol 7 (4.36) ◽  
pp. 1012
Author(s):  
A. Yu.Drakin ◽  
S. B. Rybalka ◽  
A. A. Demidov
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Schottky Diode ◽  
Theoretical Calculations ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Continuity Equations ◽  
The Poisson Equation ◽  
Current Voltage ◽  
Gap Width

The current-voltage characteristic of the 4H-SiC Schottky diode for forward and reverse current direction was calculated and simulated on the base of the theory of thermionic emission and a physical analytical model based on the Poisson equation, the diffusive and continuity equations. It is shown that as follows from the theoretical calculations and calculations carried out in ATLAS that breakdown voltage of Schottky diode more than 2 kV is provided at a thickness of 4H-SiC of epitaxial layer from 18 mm. It is established that thickness of epitaxial layer from 20 mm will provide breakdown voltage of Schottky diode more than 2 kV. In addition the current-vltage characteristic for perspective Schottky diode (with breakdown voltage ~3 kV) with thickness of 4H-SiC epitaxial layer of 20 mm, p+ ring of 30 microns wide and five rings of 5 mm wide with a gap width of 2.5 mm, JTE layer of 80 mm wide. It is shown that the diode with the above specified structure can stand breakdown voltage up to ~3 kV 

Sign in / Sign up

Export Citation Format

Share Document