The composition dependence of the optical properties of InN-rich InGaN grown by MBE

2004 ◽  
Vol 831 ◽  
Author(s):  
R.W. Martin ◽  
P.R. Edwards ◽  
S. Hernandez ◽  
K. Wang ◽  
I. Fernandez-Torrente ◽  
...  
Keyword(s):  
Composition Dependence ◽  
Full Range ◽  
Vapour Phase ◽  
Luminescence Spectra ◽  
Group V ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Luminescence Peak ◽  
Metal Organic ◽  
Organic Vapour

ABSTRACTStudy of the relationship between the composition and optical energies of InxGa1-xN has generated much interest and intrigue over the last decade and beyond. In this paper we describe data from InxGa1-xN epilayers covering the full range of composition (0 < × < 1), grown by both Metal-Organic Vapour Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE). In particular we concentrate on a set of state-of-the-art InN rich MBE layers (0.6 < × < 1.0). Wavelength dispersive X-ray microanalysis is employed for accurate measurement of the InN fraction and of the group III : group V ratio. The InN rich layers are shown to be highly stoichiometric. The composition results are correlated with luminescence spectra, which show peaks covering the range 1.3 to 0.7 eV. Inclusion of our data from sets of MOVPE and MBE epilayers with InN fractions up to 0.4, measured using identical techniques, allows the composition dependence of the luminescence peak energy to be plotted across the entire composition range. A quadratic fit gives good agreement with both the low-InN MOVPE and high-InN MBE samples but not for the intermediate region. Possible reasons for this are discussed.

New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy

1993 ◽  
Vol 17 (1-3) ◽  
pp. 25-28 ◽  
Author(s):  
R. Dorn ◽  
M. Müller ◽  
J. Lorbeth ◽  
G. Zimmermann ◽  
H. Protzmann ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metal Organic ◽  
Organic Vapour ◽  
Gallium Hydride

Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures

2008 ◽  
Vol 1076 ◽  
Author(s):  
Sindy Hauguth-Frank ◽  
Vadim Lebedev ◽  
Katja Tonisch ◽  
Henry Romanus ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Structural Properties ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Measurement Systems ◽  
Double Heterostructures ◽  
Metal Organic ◽  
Organic Vapour

ABSTRACTInvestigations on standing wave (SW) interferometry come in focus of interest in the course of ongoing miniaturization of high precision length measurement systems. A key problem within these efforts is the development of a transparent ultra-thin photodetector for sampling the intensity profile of the generated SW. Group III-materials are promising candidates to ensure a good photodetector performance combined with the required optical transparency. In this work, we report on the interrelation of strain and dislocation density along with the influence of the structural properties on the sensitivity of double-heterostructure III-nitride photodetectors grown by molecular beam and metal organic vapour phase epitaxy.

Epitaxy of III–V semiconductors

1991 ◽  
Vol 69 (3-4) ◽  
pp. 370-377
Author(s):  
P. Balk ◽  
A. Brauers ◽  
D. Grützmacher ◽  
O. Kayser ◽  
M. Weyers
Keyword(s):  
Multiple Quantum Well ◽  
Vapour Phase ◽  
Test Case ◽  
Multiple Quantum ◽  
Group V ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Epitaxial Deposition ◽  
Metal Organic

This paper is concerned with the control of the epitaxial deposition of III–V materials by means of techniques using metal organic group III compounds and group V hydrides as starting materials: metal-organic vapour-phase epitaxy and metal-organic molecular-beam epitaxy. Such control is essential with regards to intentional and background doping and for the sake of the uniformity of the film properties of binary semiconductors. In systems containing ternary and quaternary materials, there is the further requirement of compositional control and lattice matching. In addition to the equipment aspects, this paper will discuss the contributions to be expected of novel precursors and the control problem related to selective area growth. Finally, the growth of multiple quantum well structures will be reviewed as a test case for mastering epitaxial deposition.

Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxy

1988 ◽  
Vol 6 (10) ◽  
pp. 365-368 ◽  
Author(s):  
P. Capper ◽  
P.A.C. Whiffin ◽  
B.C. Easton ◽  
C.D. Maxey ◽  
I. Kenworthy
Keyword(s):  
Vapour Phase ◽  
Acceptor Doping ◽  
Group V ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair
Keyword(s):  
Vapour Phase ◽  
Free Carrier ◽  
Variable Range Hopping ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Phase Vapeur ◽  
Extended States ◽  
Good Uniformity ◽  
Donor States

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.

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