Fabrication of LED Based on III-V Nitride and its Applications

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Shibata
Keyword(s):  
Light Source ◽  
Short Wavelength ◽  
Light Output ◽  
White Led ◽  
Nitride Semiconductors ◽  
Light Output Power ◽  
Air Conditioners ◽  
Air Purifier ◽  
Chemical Content ◽  
Color Rendering

ABSTRACTShort wavelength LED (TG Purple) based on III-V nitride semiconductors is established in addition to blue and green. This short wavelength LED is realized by adjusting “Indium” chemical content of the well layer. Light output power of “TG Purple” is high and FWHM is narrow. “TG Purple” is applied to light source of white LED. Combination of “TG Purple” and various phosphors can generate white light with high luminous intensity and good color rendering. “TG Purple” is also applied to light source of air-purifier. This air-purifier was equipped in a car and several applications of this system are widely utilized in room air conditioners and refrigerators.

Ce-Doped La3Si6.5Al1.5N9.5O5.5, a Rare Highly Efficient Blue-Emitting Phosphor at Short Wavelength toward High Color Rendering White LED Application

2017 ◽  
Vol 9 (27) ◽  
pp. 22665-22675 ◽  
Author(s):  
Chun-Yun Wang ◽  
Takashi Takeda ◽  
Otmar Melvin ten Kate ◽  
Masataka Tansho ◽  
Kenzo Deguchi ◽  
...  
Keyword(s):  
Short Wavelength ◽  
White Led ◽  
Highly Efficient ◽  
Color Rendering

Study on Tunable Color Temperature White LED Light Source with Ultra-High Color Rendering Index

2015 ◽  
Vol 35 (10) ◽  
pp. 1023002
Author(s):  
谌江波 Chen Jiangbo ◽  
余建华 Yu Jianhua ◽  
高亚飞 Gao Yafei ◽  
张翼扬 Zhang Yiyang ◽  
陆秀炎 Lu Xiuyan
Keyword(s):  
Light Source ◽  
Color Temperature ◽  
White Led ◽  
Led Light ◽  
Color Rendering Index ◽  
Color Rendering

scholarly journals Light Output, Thermal Properties, and Reliability of Using Glass Phosphors in WLED Packages

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 239
Author(s):  
Chin-Chuan Huang ◽  
Tsung-Han Weng ◽  
Chun-Liang Lin ◽  
Yan-Kuin Su
Keyword(s):  
Thermal Properties ◽  
Yttrium Aluminum Garnet ◽  
Saturated Vapor ◽  
Light Output ◽  
Junction Temperature ◽  
Color Temperature ◽  
Light Emitting ◽  
Chromaticity Coordinate ◽  
White Light Emitting Diodes ◽  
Color Rendering

White-light-emitting diodes (WLED) based on yttrium aluminum garnet (YAG) phosphors sintered with glass (PiG) and with silicone (PiS) are compared in terms of their light properties, temperature properties and reliability.The complete YAG phosphor was doped with an encapsulant traditional WLED (PiS WLED), and the WLED was covered with PiG (PiG WLED). PiG was made by sintering glass powder and YAG phosphor at the ratio of 87:13 (%), and the correlated color temperature (CCT) was 5564 K. The CCT of the PiG WLED with the YAG doping concentration of 8.5 wt.% approximated 5649 K. The initial light output of the PiG WLED was 6.4% lower than that of the PiS WLED. Under 1008 h and 350 mA aging, PiG WLED and PiS WLED’ light output, CCT and color rendering index variation rates were all within 1%. In the saturated vapor-pressure test, no sample exhibited red ink infiltration, light nor peeling between the encapsulant and the lead-frame. Compared with that of the PiS WLED, the junction temperature of the PiG WLED reduced from 88.4 °C to 81.3 °C. Thermal resistance dropped from 37.4 °C/W to 35.6 °C/W. The PiG WLED presented a better CIE (Commission Internationale de l’Eclairage) 1931 chromaticity coordinate (x,y) concentration and thermal properties than the PiS WLED.

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Design of White LED Light Source for Noble LCD Backlight Module

2008 ◽  
Vol 495 (1) ◽  
pp. 80/[432]-96/[448] ◽  
Author(s):  
L. S. Chou ◽  
I-Hsin Lin
Keyword(s):  
Light Source ◽  
White Led ◽  
Led Light

scholarly journals A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

2015 ◽  
Vol 2015 ◽  
pp. 1-4 ◽  
Author(s):  
W. Wang ◽  
Y. Cai ◽  
Y. B. Zhang ◽  
H. J. Huang ◽  
W. Huang ◽  
...  
Keyword(s):  
High Voltage ◽  
Light Emitting Diode ◽  
Light Output ◽  
Green Light ◽  
Current Crowding ◽  
Single Chip ◽  
Light Output Power ◽  
Large Area ◽  
Light Emitting ◽  
Multiple Cells

A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC) light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a6.6×5 mm2large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP) at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

Study on LEDs Synthesized High Color Rendering Index White Light Source

2016 ◽  
Vol 36 (3) ◽  
pp. 0323003
Author(s):  
胡奕彬 Hu Yibin ◽  
庄其仁 Zhuang Qiren ◽  
刘士伟 Liu Shiwei ◽  
赖传杜 Lai Chuandu
Keyword(s):  
Light Source ◽  
White Light ◽  
White Light Source ◽  
Color Rendering Index ◽  
Color Rendering

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

Sign in / Sign up

Export Citation Format

Share Document