Longitudinal Modes in InAlGaAs/AlGaAs High-Power Laser Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
B. S. Passmore ◽  
Y. C. Chua ◽  
M. O. Manasreh ◽  
J. W. Tomm
Keyword(s):  
Cavity Length ◽  
Laser Diodes ◽  
Threshold Current ◽  
Stimulated Emission ◽  
High Power Laser ◽  
Power Laser ◽  
Longitudinal Modes ◽  
Direct Measurements ◽  
Infrared Spectrometer ◽  
Good Agreement

ABSTRACTThe emission from bias voltage driven In0.06Al0.08Ga0.86As/Al0.3Ga0.7As edge-emitting diode lasers with cavity lengths of 0.6 and 0.9 mm was measured at 290 K using a high resolution Fourier-transform infrared spectrometer. The light-current (L-I) characteristic curves showed that a threshold current of ∼ 0.5 and 0.8 A was needed to reach the stimulated emission in laser diodes with cavity lengths of 0.6 and 0.9 mm, respectively. The laser diode longitudinal modes were observed in the stimulated emission spectrum for each of the devices. These spectra enabled us to calculate the refractive index, total loss, and gain of the active region. On the other hand, the cavity length was determined by utilizing the interferogram spectrum, longitudinal modes spacing, and direct measurements of the laser dimensions. A good agreement between the cavity length values obtained from the three methods was achieved.

Limitations to brightness in high power laser diodes

2015 ◽  
Author(s):  
P. Crump ◽  
M. Winterfeldt ◽  
J. Decker ◽  
M. Ekterai ◽  
J. Fricke ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Thermal condition of high-power laser diodes

2015 ◽  
Vol 42 (3) ◽  
pp. 88-92 ◽  
Author(s):  
V. V. Bezotosnyi ◽  
O. N. Krokhin ◽  
V. A. Oleshchenko ◽  
V. F. Pevtsov ◽  
Yu. M. Popov ◽  
...  
Keyword(s):  
High Power ◽  
Thermal Condition ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

scholarly journals Double-asymmetric-structure 1.5 μ m high power laser diodes

2019 ◽  
Author(s):  
Lauri Hallman ◽  
Boris S. Ryvkin ◽  
Eugene A. Avrutin ◽  
Antti T. Aho ◽  
Jukka Viheriala ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Asymmetric Structure ◽  
High Power Laser ◽  
Power Laser

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

High-power laser diodes based on asymmetric separate-confinement heterostructures

2005 ◽  
Vol 39 (3) ◽  
pp. 370-373 ◽  
Author(s):  
D. A. Vinokurov ◽  
S. A. Zorina ◽  
V. A. Kapitonov ◽  
A. V. Murashova ◽  
D. N. Nikolaev ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

2013 ◽  
Author(s):  
Grzegorz Sobczak ◽  
Elżbieta Dąbrowska ◽  
Marian Teodorczyk ◽  
Joanna Kalbarczyk ◽  
Andrzej Maląg
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1741-1745 ◽  
Author(s):  
P. Del Vecchio ◽  
A. Curutchet ◽  
Y. Deshayes ◽  
M. Bettiati ◽  
F. Laruelle ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Laser ◽  
Power Laser
Sign in / Sign up

Export Citation Format

Share Document