Vertically Integrated Amorphous Silicon Particle Sensors

2004 ◽  
Vol 808 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
A. Shah ◽  
D. Moraes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Dark Current ◽  
Silicon Particle ◽  
Particle Beam ◽  
High Energy ◽  
Beta Particle ◽  
Particle Detection ◽  
Glass Substrates ◽  
Hydrogenated Amorphous

ABSTRACTVertically integrated particle sensors have been developed using thin-film on ASIC technology. Hydrogenated amorphous silicon n-i-p diodes have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 m). Corresponding diodes were later directly deposited on two types of CMOS readout chips. These vertically integrated particle sensors were tested in beta particle beam from 63Ni and 90Sr sources. Detection of single low- and high- energy beta particle was achieved.

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

Development of Vertically Integrated Imaging and Particle Sensors

2003 ◽  
Vol 762 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
A. Shah ◽  
N. Blanc ◽  
...  
Keyword(s):  
Dark Current ◽  
Direct Detection ◽  
Reverse Bias Voltage ◽  
Particle Detection ◽  
Particle Detectors ◽  
Beta Particles ◽  
Glass Substrates ◽  
Cmos Imagers ◽  
Pulse Illumination ◽  
Hydrogenated Amorphous

AbstractIntegrated imaging and particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for imaging and direct particle detection. These devices were first deposited on glass substrates and later on CMOS readout chips. With an optimization of the material properties and of the diode, a dark current of 1 pA/cm2 could be achieved on p-i-n structures at reverse bias voltage of 1 V. CMOS imagers, incorporating these optimized diodes were then fabricated and characterized. Very thick diodes (with thicknesses up to 50 μm) were also optimized and deposited on glass and on CMOS readout chips. Particle detectors in TFA technology with 12 and 30 μm a-Si:H n-i-p diodes have been fabricated and characterized using light pulse illumination. Direct detection of single low-energy beta particles has been demonstrated.

Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons

2012 ◽  
Vol 358 (17) ◽  
pp. 2039-2043 ◽  
Author(s):  
Shin-ichiro Sato ◽  
Hitoshi Sai ◽  
Takeshi Ohshima ◽  
Mitsuru Imaizumi ◽  
Kazunori Shimazaki ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electric Conductivity ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Hydrogenated Amorphous

Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading

1999 ◽  
Vol 557 ◽  
Author(s):  
E. Schroten ◽  
M. Zeman ◽  
R. A. C. M. M. van Swaaij ◽  
L. L. A. Vosteen ◽  
J. W. Metselaar
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Model Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Amorphous Silicon Germanium ◽  
Parameter Values ◽  
Hydrogenated Amorphous

AbstractComputer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.

Performance analysis of a-Si:H detectors deposited on CMOS chips

2004 ◽  
Vol 808 ◽  
Author(s):  
C. Miazza ◽  
S. Dunand ◽  
N. Wyrsch ◽  
A. Shah ◽  
N. Blanc ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Technology ◽  
Silicon Detectors ◽  
Particle Detection ◽  
Glass Substrates ◽  
Density Values ◽  
Increased Sensitivity ◽  
Current Densities ◽  
Primary Focus ◽  
Possible Cause

ABSTRACTImage and particle sensors based on thin-film on CMOS technology are currently being developed at our laboratory. In this technology, amorphous silicon detectors are vertically integrated on top of dedicated CMOS chips. For both, vision and particle detection, this approach is expected to enhance the performances. In fact very high fill factors, increased sensitivity, and integration level, coupled with extremely low dark current density values can potentially be attained.A first optimization of the a-Si:H diodes (>1mm2) on glass substrates, with the primary focus on reducing dark current densities, gave Jdark values as low as 1 pA/cm2 (at -1 V for 1 m thick detectors). These detectors were then deposited on CMOS readout chips, but so far this step was unfortunately accompanied by an increase in Jdark to values over 10 nA/cm2.Here, the possible cause for such an increase in Jdark as well as possible “remedies” against this effect will be discussed; the principle cause is supposed to be the influence of chip topology. Possible solutions include surface treatments as well as the use of metal-i-p diode configuration. Results obtained so far with these methods are given.

Dark current of hydrogenated amorphous silicon photo-diode

1985 ◽  
Vol 77-78 ◽  
pp. 1417-1420 ◽  
Author(s):  
Hidejiro Miki ◽  
Masahiro Hayama ◽  
Kazuhiro Kobayashi ◽  
Naoki Nakagawa ◽  
Makoto Otani ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Dark Current ◽  
Hydrogenated Amorphous Silicon ◽  
Photo Diode ◽  
Hydrogenated Amorphous

PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Bohm
Keyword(s):  
Amorphous Silicon ◽  
Empirical Model ◽  
Dark Current ◽  
Reverse Bias ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Current Noise ◽  
Pin Diodes ◽  
Hydrogenated Amorphous ◽  
Operating Points

ABSTRACTThe noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

Sign in / Sign up

Export Citation Format

Share Document