Stress and Strength of free-standing 2-dimensional tetrahedral amorphous carbon bridge arrays

2003 ◽  
Vol 795 ◽  
Author(s):  
Daniel H.C. Chua ◽  
T. H. Tsai ◽  
W. I. Milne ◽  
D. Sheeja ◽  
B. K. Tay

ABSTRACTThe fabrication of ultrathin (25nm) 2-dimensional free-standing arrays of tetrahedral amorphous Carbon (ta-C) microbridges is reported for the first time. The ta-C films were deposited by a Filtered Cathodic Vacuum Arc (FCVA) deposition system where the sp3 content in the film was measured to be in excess of 90% by high resolution XPS. Continuous arrays of free standing taC bridges whose length/width ratios ranged from 1:1 to 12:1 were successfully fabricated while maintaining the same thickness. Due to the naturally high compressive stress of ta-C films, the buckling of films was perpendicular to the length of the beam. The displacement of curvature obtained was in good agreement with FEM simulation results. Moreover, the curvature or arch of these ultrathin films, coupled with a high Young's modulus (750GPa) and Hardness (60GPa), meant they could withstand a vertical force in excess of 8000μN without breaking.

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.


1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.


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