Asymmetry in Multilayer Adhesion: the Zinc Oxide / Silver Interface

2003 ◽  
Vol 795 ◽  
Author(s):  
E. Barthel ◽  
P. Nael ◽  
O. Kerjan ◽  
N. Nadaud
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
First Principles ◽  
Double Cantilever Beam ◽  
Adhesion Energy ◽  
Adhesion Measurement ◽  
Interfacial Structures ◽  
Set Up

ABSTRACTWe have developed a wedge-loaded double-cantilever beam adhesion measurement set-up for thin films deposited on glass by magnetron sputtering. Results on the Glass/ZnO/Ag/ZnO multilayer evidence that the upper Ag/ZnO interface is tougher than the lower ZnO/Ag interface. This asymmetry in the adhesion energy between identical materials is not expected from first principles. It results from different non-equilibrium interfacial structures.

Study on Structural Properties of Gallium and Titanium Doped Zinc Oxide Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Crystal Structures ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Glass Substrates ◽  
Zinc Oxide Films

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.

Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Visible Region ◽  
Film Surface ◽  
Optical Transmittance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Investigation of Optical Properties of Aluminium Doped Zinc Oxide Thin Films Deposited by Magnetron Sputtering

2013 ◽  
Vol 446-447 ◽  
pp. 259-262
Author(s):  
J.H. Gu ◽  
T. Zhang ◽  
Z.Y. Zhong ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Energy Gap ◽  
Dispersion Model ◽  
Argon Pressure ◽  
Optical Energy Gap ◽  
Characterization Methods

Aluminium doped zinc oxide (AZO) thin films were prepared by magnetron-sputtering. The optical and structural properties of the films were investigated by optical transmission spectra and X-ray diffraction (XRD) measurements, respectively. The results indicate that the AZO films have hexagonal wurtzite structure with highly c-axis preferred orientation. The optical and structural properties of the films are observed to be subjected to the argon pressure. The AZO film prepared at the argon pressure of 0.5 Pa exhibits the largest crystallite size and the highest average visible transmittance. Also, the refractive index and optical energy-gap of the films were determined by optical characterization methods. The dispersion behavior of the refractive index was studied using the Sellmeier’s dispersion model.

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

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