Molecular dynamics simulation of point defect accumulation in 3C-SiC

2003 ◽  
Vol 792 ◽  
Author(s):  
R. Devanathan ◽  
F. Gao ◽  
W. J. Weber
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Molecular Dynamics Simulation ◽  
Point Defects ◽  
Driving Force ◽  
Short Range ◽  
Dynamics Simulation ◽  
Damage Level ◽  
Defect Accumulation ◽  
Type Potential

ABSTRACTDefect accumulation in silicon carbide has been simulated by molecular dynamics using a Brenner-type potential connected smoothly to the Ziegler-Biersack-Littmark potential. Displacement damage in 3C-SiC, which is known to consist of point defects, vacancy and interstitial clusters and anti-site defects, was modelled by introducing random displacements on the Si or C sublattice. SiC was amorphized by Si displacements at a damage level corresponding to 0.15 displacements per atom (dpa) and by C displacements at 0.25 dpa. In both cases, the damage consists of Si and C Frenkel pairs as well as anti-site defects. The results provide evidence that SiC can be amorphized by displacing C atoms exclusively and suggest that short-range disorder provides the driving force for amorphization of SiC.

Molecular Dynamics Simulation of Neutron Damage in β-SIC

1998 ◽  
Vol 540 ◽  
Author(s):  
J.M. Perlado ◽  
L. Malerba ◽  
T. Diaz De La Rubia
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Point Defects ◽  
Damage Accumulation ◽  
Md Simulations ◽  
Dynamics Simulation ◽  
Temperature Sensitive ◽  
Neutron Damage ◽  
Preliminary Study ◽  
Threshold Displacement

AbstractMolecular Dynamics (MD) simulations of neutron damage in β-SiC have been performed using a modified version of the Tersoff potential. The Threshold Displacement Energy (TDE) for Si and C atoms at 300 K has been determined along directions [001], [110], [111] and [ 1 1 1 ]. The existence of recombination barriers, which allow the formation of metastable, temperature-sensitive defects even below the threshold, has been observed. Displacement cascades produced by both C- and Si-recoils of energies spanning from 0.5 keV up to, respectively, 5 keV and 8 keV have also been simulated at 300 K and 1300 K. Their analysis, together with the analysis of damage accumulation (∼3.4×10-3 DPA) at 1300 K, reveals that the two sub-lattices exhibit opposite responses to irradiation: whereas only a little damage is produced on the “ductile” Si sub-lattice, many point-defects accumulate on the much more “fragile” C sub-lattice. A preliminary study of the nature and clustering tendency of these defects is performed. The possibility of disorder-induced amorphization is considered and the preliminary result is that no amorphization takes place at the dose and temperature simulated.

An Investigation on Thermal Conductivity of Fluid in a Nanochannel by Nonequilibrium Molecular Dynamics Simulations

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Mohammad Bagheri Motlagh ◽  
Mohammad Kalteh
Keyword(s):  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Poiseuille Flow ◽  
Driving Force ◽  
Dynamics Simulation ◽  
Nonequilibrium Molecular Dynamics ◽  
Wall Roughness ◽  
Dynamics Simulations ◽  
Effect Of Copper

Abstract In this paper, molecular dynamics simulation is used to investigate the effect of copper and argon nanochannels size on the thermal conductivity of argon. Thermal conductivity is calculated by nonequilibrium molecular dynamics (NEMD) simulation. Simulations are performed for different distances between the walls. Results for both copper and argon walls are investigated individually. Results show that the existence of argon walls has little effect on the thermal conductivity. However, the amount of it for the argon confined between the copper walls is affected by the distance between the two walls. In the same way, the effect of wall roughness on the thermal conductivity is investigated, which shows that roughness is effective only for low distances between the walls. Also, the thermal conductivity of argon under Poiseuille flow in a nanochannel is studied. The results indicate that by increasing the driving force, the thermal conductivity increases and the increase ratio is higher for larger forces.

Molecular dynamics simulation studies on the plastic behaviors of an iron nanowire under torsion

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28792-28800 ◽  
Author(s):  
Chong Qiao ◽  
Yanli Zhou ◽  
Xiaolin Cai ◽  
Weiyang Yu ◽  
Bingjie Du ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Plastic Deformation ◽  
Molecular Dynamics Simulation ◽  
Deformation Mechanism ◽  
Driving Force ◽  
Dynamics Simulation ◽  
Simulation Studies ◽  
Plastic Deformation Mechanism ◽  
Constant Torsion ◽  
External Driving

The plastic deformation mechanism of iron (Fe) nanowires under torsion is studied using the molecular dynamics (MD) method by applying an external driving force at a constant torsion speed.

scholarly journals Thermal property of graphene/silicon carbide heterostructure by molecular dynamics simulation

2021 ◽  
Vol 70 (18) ◽  
pp. 187302-187302
Author(s):  
Liu Dong-Jing ◽  
◽  
Wang Shao-Ming ◽  
Yang Ping ◽  
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Molecular Dynamics Simulation ◽  
Thermal Property ◽  
Dynamics Simulation
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