Ferro- and piezoelectric properties of Bi4−xPrxTi3O12 polycrystalline thick films with Ps-vector orientation

2003 ◽  
Vol 784 ◽  
Author(s):  
Hirofumi Matsuda ◽  
Sachiko Ito ◽  
Takashi Iijima
Keyword(s):  
Domain Walls ◽  
Volume Fraction ◽  
Ferroelectric Properties ◽  
Polar Axis ◽  
Piezoelectric Response ◽  
Cooling Process ◽  
Axis Orientation ◽  
Solution Deposition ◽  
Displacive Ferroelectrics ◽  
Vector Orientation

ABSTRACTTo reveal the complete performance of intrinsic ferroelectriciy-related properties in single crystalline bismuth-layer-structured displacive ferroelectrics in film form on Si, the crucial roles of both orientation control technology by lattice matching from the atomic arrangement of substrate layer and configuration of the volume fraction of 90°-domain during cooling process were demonstrated. 1.2 μm-thick and Pr3+-substituted Bi4-xPrxTi3O12 (BPT, x =0.0, 0.3, 0.5, 0.7) films were grown on Ir(111)/Ti/SiO2/Si(001) substrates by chemical solution deposition (CSD) method with preferred orientation along the major component of Ps vector. BPT film of x =0.3 exhibited superb ferroelectric properties of remanent polarization 2Pr=92 μC/cm2, saturation polarization Psat=50 μC/cm2, and coercive field 2Ec=184 kV/cm. The film also showed uniform piezoelectric response with an effective piezoelectric coefficient of AFM-d33=36 pm/V. During the decomposition of precursor solutions, IrO2 layers were formed at the surface of Ir layers and promoted a/b-axes orientation. During the cooling process after grain growth, in addition, the differential thermal expansion and residual strain between film and substrate introduced bidirectional lateral stress into BPT film and might eliminate the 90°-domain walls dividing a-and b-domains through the relaxation by domain formation at the Curie temperature TC. Consequently the polar-axis orientation was distinctively grown along the film normal and the conjugate non-polar-axis was grown in-plane.

scholarly journals Механические напряжения и гигантский пьезоотклик поверхности текстурированной керамики K-=SUB=-2-=/SUB=-Sr-=SUB=-4-=/SUB=-Nb-=SUB=-10-=/SUB=-O-=SUB=-30-=/SUB=-

2019 ◽  
Vol 45 (16) ◽  
pp. 45
Author(s):  
М.А. Бунин ◽  
О.А. Бунина ◽  
Ю.А. Куприна ◽  
В.П. Завьялов
Keyword(s):  
Scanning Probe Microscopy ◽  
Domain Walls ◽  
Sample Surface ◽  
Scanning Probe ◽  
Piezoelectric Response ◽  
Axis Orientation ◽  
Response Data ◽  
Crystallographic Characteristics ◽  
Anisotropic Lattice ◽  
Polar Nanoregions

The crystallographic characteristics of the K2Sr4Nb10O30 ceramic samples are compared with the surface piezoelectric response data obtained by scanning probe microscopy. The relative magnitudes of the piezoelectric moduli d33 were estimated from the surface piezoresponse amplitudes. Depending on the texture axis orientation relative to the ceramics sample surface they are 62 or 58 times greater than the values for an isotropic sample. The anisotropic lattice deformations caused by the pressure during the hot pressing is one of the sources of the surface giant piezoresponse. The influence of the domain walls and polar nanoregions are discussed.

Enhanced ferroelectric properties of highly (100) oriented Pb(Zr0.52Ti0.48)O3 thick films prepared by chemical solution deposition

2013 ◽  
Vol 03 (02) ◽  
pp. 1350011 ◽  
Author(s):  
Wanlin Zhu ◽  
Wei Ren ◽  
Hong Xin ◽  
Peng Shi ◽  
Xiaoqing Wu
Keyword(s):  
Chemical Solution Deposition ◽  
Domain Switching ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Deposition Process ◽  
Piezoelectric Response ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates

Ferroelectric Pb ( Zr 0.52 Ti 0.48) O 3 (PZT) thick films with highly (100) preferential orientation have been prepared by chemical solution deposition process on Pt / Ti / SiO 2/(100) Si substrates and pyrolyzed at 350°C–450°C, then annealed at 650°C. The typical thickness of the films is 3.9 μm. Effects of the pyrolysis temperature and excess PbO on the orientation, dielectric and ferroelectric properties of PZT thick films have been discussed. Domain switching and depoling process were studied by piezoelectric force microscopy. (100) oriented PZT films exhibit enhanced electrical properties. The dielectric constant and loss tangent of the films are 1444 and 0.022 at 1 kHz, respectively. The remnant polarization increases from 27.6 to 34.6 μC/cm2, and the coercive field decreases from 61.4 to 43.5 kV/cm, when the orientation of the films changes from the random orientation to the preferential (100) orientation. The leakage current density is 10-8 A/cm2 at dc field of 0.25 kV/cm, and then increases to 10-6 A/cm2 at 40 kV/cm. The piezoelectric response of the oriented films is investigated by Piezoelecric Force Microscopy (PFM).

scholarly journals Mobile and immobile boundaries in ferroelectric films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
P. Yudin ◽  
K. Shapovalov ◽  
T. Sluka ◽  
J. Peräntie ◽  
H. Jantunen ◽  
...  
Keyword(s):  
Long Range ◽  
Domain Walls ◽  
Ferroelectric Properties ◽  
Practical Importance ◽  
Dynamic Responses ◽  
Ferroelectric Films ◽  
Domain Structures ◽  
Mobile Interfaces ◽  
Ferroelastic Domains ◽  
Viable Method

AbstractThe intrinsic mobile interfaces in ferroelectrics—the domain walls can drive and enhance diverse ferroelectric properties, essential for modern applications. Control over the motion of domain walls is of high practical importance. Here we analyse theoretically and show experimentally epitaxial ferroelectric films, where mobile domain walls coexist and interact with immobile growth-induced interfaces—columnar boundaries. Whereas these boundaries do not disturb the long-range crystal order, they affect the behaviour of domain walls in a peculiar selective manner. The columnar boundaries substantially modify the behaviour of non-ferroelastic domains walls, but have negligible impact on the ferroelastic ones. The results suggest that introduction of immobile boundaries into ferroelectric films is a viable method to modify domain structures and dynamic responses at nano-scale that may serve to functionalization of a broader range of ferroelectric films where columnar boundaries naturally appear as a result of the 3D growth.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Dependence of Ferroelectric Properties on Thickness of BiFeO3Thin Films Fabricated by Chemical Solution Deposition

2005 ◽  
Vol 44 (12) ◽  
pp. 8525-8527 ◽  
Author(s):  
Sushil K. Singh ◽  
Risako Ueno ◽  
Hiroshi Funakubo ◽  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition

Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

1999 ◽  
Vol 14 (4) ◽  
pp. 1190-1193 ◽  
Author(s):  
J. H. Kim ◽  
A. T. Chien ◽  
F. F. Lange ◽  
L. Wills
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Transmission Electron ◽  
Saturation Polarization ◽  
Pzt Thin Film ◽  
Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

scholarly journals Piezoelectric Properties of SrBi4Ti4O15 Ferroelectric Ceramics

2002 ◽  
Vol 17 (6) ◽  
pp. 1376-1384 ◽  
Author(s):  
Marlyse Demartin Maeder ◽  
Dragan Damjanovic ◽  
Cyril Voisard ◽  
Nava Setter
Keyword(s):  
Piezoelectric Coefficient ◽  
Domain Walls ◽  
High Pressures ◽  
Elevated Temperatures ◽  
Piezoelectric Properties ◽  
Ferroelectric Ceramics ◽  
Piezoelectric Response ◽  
Low Frequencies ◽  
Sintering Conditions ◽  
Weak Fields

The dynamic piezoelectric response of SrBi4Ti4O15 ceramics with Aurivillius structure was investigated at high alternating stress, low frequencies (0.01 to 100 Hz), and temperatures from 20 to 200 °C. The piezoelectric nonlinearity, observed only at high pressures (>10 MPa) and elevated temperatures (>150 °C), is interpreted in terms of contributions from non-180° domain walls. At weak fields, the frequency dependence of the longitudinal piezoelectric coefficient was explained in terms of Maxwell–Wagner piezoelectric relaxation. The Maxwell–Wagner units are identified as colonies that consist of highly anisotropic grains which sinter together, and whose distribution in the ceramic is strongly dependent on sintering conditions.

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