Imaging individual chains and aggregates on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
J.K.J. van Duren ◽  
P. Jonkheijm ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
...  

AbstractWe demonstrate a novel method to visualize individual molecular chains in the surface layer of organic semiconducting polymer films of arbitrary thickness. The method is based on scanning force microscopy and employs a combination of a sensitive phase detection system and metal coated tips with a low (∼1 N/m) spring constant and a relatively high Q factor (∼200). The molecularly resolved morphology is observed in phase images that are taken simultaneously with the topography. Surprisingly, we found that, when the tip apex radius exceeds the intermolecular spacing in the surface layer, surface aggregates –when present- are visualized. In both cases, the phase contrast is shown to result from van der Waals interaction between the conjugated backbone of the polymer chains and the metallic tip, and can quantitatively be described by a simple harmonic oscillator model. We have employed this method to study the morphology of poly(p-phenylene vinylene) (PPV) derivatives with different substitutions.

1997 ◽  
Vol 488 ◽  
Author(s):  
Ph. Leclère ◽  
R. Lazzaroni ◽  
V. Parente ◽  
B. François ◽  
J. L. Brédas

AbstractAtomic Force Microscopy (AFM) and related techniques are used to investigate the morphology of diblock copolymers. We focus on compounds containing a conjugated segment, polyparaphenylene, associated to a polymethylmethacrylate or a polystyrene block. The influence of the presence of the conjugated segment on the microdomain morphology is analyzed as a function of chain composition. Separate microdomains are observed on the surface of thin films by means of phase-detection imaging tapping-mode AFM. Their shape and size are interpreted in terms of molecular aggregation, with the help of molecular dynamics calculations.


1997 ◽  
Vol 30 (16) ◽  
pp. 4719-4726 ◽  
Author(s):  
V. Koutsos ◽  
E. W. van der Vegte ◽  
E. Pelletier ◽  
A. Stamouli ◽  
G. Hadziioannou

Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.


Author(s):  
P. Fraundorf ◽  
B. Armbruster

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.


2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.


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