Multilayer Fe/Cu Films

1986 ◽  
Vol 77 ◽  
Author(s):  
S. H. Liou ◽  
Gang Xiao ◽  
C. L. Chien ◽  
K. M. Unruh
Keyword(s):  
Thin Films ◽  
Magnetic Moment ◽  
Multilayer Films ◽  
Squid Magnetometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Ssbauer Spectroscopy ◽  
Cu Alloys ◽  
Small Magnetic Moment

ABSTRACTMultilayer films consisting of alternating Fe and Cu thin films have been made by a twin-gun sputtering device with a rotating substrate platform. Both proportional modulated films and films with a fixed Cu layer have been fabricated, where the Fe layer has been varied between 10 and 150 Å. These films have been studied by x-ray diffraction, Mö;ssbauer spectroscopy and SQUID magnetometry. Thin Fe layers with thicknesses less than 25 Å, exist only as fee α-Fe. Thicker Fe layers contain both bec and fee Fe. The interface between Fe and Cu appears very sharp with no evidence of Fe-Cu alloys. The α-Fe state orders magnetically below 100 K with a small magnetic moment.

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

Evolution of Residual Stresses in Thin Films Deposited on Mechanically Strained Substrates

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Sheikh ◽  
A. Berger ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Simple Model ◽  
Residual Stresses ◽  
Vapor Phase ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Cu Films ◽  
Residual Film ◽  
Nickel Substrates

ABSTRACTA simple model for the formation of residual stresses in thin films deposited on elastically strained substrates was derived and experimentally tested. In the experiments, Cu thin films were deposited on elastically stretched nickel substrates. These Cu films were2 to 4.m thick and were deposited through vapor phase evaporation or electroplating. The loads applied during the deposition were then relaxed, and the total stress in both the film and the substrate were monitored (by x-ray diffraction) during this relaxation. It was seen that the final (residual) film stresses were significantly different for bothdeposition methods. The causes of such differences are discussed.

Phase Formation in Cu(Sn) Alloy Thin Films

1996 ◽  
Vol 427 ◽  
Author(s):  
L. A. Clevenger ◽  
B. Arcot ◽  
W. Ziegler ◽  
E. G. Colgan ◽  
Q. Z. Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Intermetallic Phase ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Film Deposition ◽  
Atomic Percent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films

AbstractThe interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6 Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170°C, then this phase dissolves into the Cu matrix at approximately 350°C. Finally, ζ- Cu10Sn3 phase forms and precipitates after heating to 500°C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ - cm. However, resistivities from 1.9 to 2.5 μΩ - cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.

X-ray tensile testing of thin films

1993 ◽  
Vol 8 (4) ◽  
pp. 764-770 ◽  
Author(s):  
I.C. Noyan ◽  
G. Sheikh
Keyword(s):  
Thin Films ◽  
Tensile Test ◽  
Mechanical Stress ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Test ◽  
X Ray Diffraction ◽  
Stress Strain ◽  
X Ray ◽  
Cu Films ◽  
Multiphase Materials

The “x-ray tensile test” is the combination of the standard uniaxial tensile test with x-ray diffraction techniques. In this test, in addition to the mechanical stress-strain values usually obtained from a tensile test, one measures the x-ray strain and stress in the diffracting regions of the sample. In multilayer thin films or in multiphase materials, x-ray diffraction enables the determination of strains and stresses in the individual layers or phases. Correlation of the x-ray data with the mechanical stress-strain values may be used to analyze strain and load partitioning within the specimen. In this paper an extended theoretical analysis of this technique and its application to evaporated Cu films on Ni substrates is presented.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1−x)O3 thin films

2006 ◽  
Vol 88 (25) ◽  
pp. 252901 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Vilho Lantto ◽  
Johannes Frantti ◽  
Jussi Hiltunen
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Effects

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

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