Rf Magnetron Sputter Deposition and Characterization of Aluminum Nitride thin Films

1986 ◽  
Vol 77 ◽  
Author(s):  
Saluru B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
High Energy ◽  
Axis Orientation ◽  
Deposition Parameters ◽  
Structural And Electrical Properties ◽  
Magnetron Sputter Deposition ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter ◽  
Sputter Deposited

ABSTRACTHighly crystalline and resistive thin films of aluminum nitride have been rf magnetron sputter deposited. The films were characterized in terms of structure, electrical and optical properties. A perfect c-axis orientation along (002) direction was obtained, in the reactive sputtered films from a metal target, keeping the substrates as low as 350°C. The structural and electrical properties were observed to be sensitive to deposition conditions. It has also been observed that the combination of higher powers and low sputtering pressures, exposed the films to high energy neutral ion bombardment. A correlation between deposition parameters and the physical properties is presented.

Effect of oxygen partial pressure in deposition ambient on the properties of RF magnetron sputter deposited Gd_2O_3 thin films

2017 ◽  
Vol 56 (22) ◽  
pp. 6114 ◽  
Author(s):  
S. Maidul Haque ◽  
Rajnarayan De ◽  
S. Tripathi ◽  
C. Mukherjee ◽  
A. K. Yadav ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Effect Of Oxygen

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

Fabrication of p-Type ZnO Thin Films Using rf-Magnetron Sputter Deposition

2009 ◽  
Vol 12 (4) ◽  
pp. H109 ◽  
Author(s):  
Jun Kwan Kim ◽  
Jung Wook Lim ◽  
Hyun Tak Kim ◽  
Sang Hoon Kim ◽  
Sun Jin Yun
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Zno Thin Films ◽  
Magnetron Sputter Deposition ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter ◽  
P Type
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