Characterization of the a-SN/CDTE(110) Interface by Angle-Resolved X-Ray Photoemission

1986 ◽  
Vol 77 ◽  
Author(s):  
Tzer-Shen Lin ◽  
William J. Partin ◽  
Yip-Wah Chung
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Layer By Layer ◽  
Tungsten Filament ◽  
X Ray ◽  
Semiconductor Heterostructure ◽  
Argon Sputtering ◽  
Abrupt Junction

ABSTRACTStoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultra-high vacuum. Cubic (α) -tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30 °C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the a-Sn growth mechanism and the composition profile of this semiconductor heterostructure nondestructively. From our analyses, we conclude that a-Sn grows on CdTe(110) at 30 °C by a layer by layer mechanism and forms an abrupt junction with CdTe(110).

scholarly journals Growth mode study of MgCl2 on Au foil and Si (111) 7x7, under Ultra High Vacuum by XPS

2011 ◽  
Vol 1 (1) ◽  
pp. 13-16
Author(s):  
S. Karakalos
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Magnesium Chloride ◽  
High Vacuum ◽  
Layer Growth ◽  
Ultra High Vacuum ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray ◽  
Reconstructed Surface

The growth mode of MgCl2 on Au foil and Si (111) 7x7 reconstructed surface under UHV conditions, was investigated by X-ray Photoelectron Spectroscopy (XPS). Magnesium chloride grows with the Frank-van der Merve, (FM) growth mode on the Au foil. On Si surface there is evidence for the layer by layer growth of MgCl2 but leaving uncovered silicon areas at the first steps of deposition due to the Si (111)7x7 surface roughness.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Fundamental study of the interaction of Ti atoms with spruce surfaces

Holzforschung ◽  
2007 ◽  
Vol 61 (5) ◽  
pp. 523-527 ◽  
Author(s):  
Lothar Klarhöfer ◽  
Florian Voigts ◽  
Dominik Schwendt ◽  
Burkhard Roos ◽  
Wolfgang Viöl ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Strong Interactions ◽  
Titanium Oxide Film ◽  
Fundamental Study ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Atoms

Abstract Metastable induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were applied to study the interaction of Ti metal atoms with spruce surfaces. Spruce surfaces were produced by planing splints from a spruce bar. Ti atoms were adsorbed from a metal evaporator under ultra-high vacuum conditions. The amount adsorbed corresponds to 10 monolayer equivalents. Strong interactions between the spruce surface and metals atoms occurred. Impinging Ti atoms were oxidized by the spruce surface. No Ti agglomeration or particle formation was observed. The surface was smoothed by the Ti applied and was completely covered by a titanium oxide film.

CORRELATION AMONG THE ELECTRONIC STATE IN Sn-DOPED YBCO SYSTEM

1991 ◽  
Vol 05 (08) ◽  
pp. 581-585
Author(s):  
H. ZHANG ◽  
S.Q. FENG ◽  
Q.R. FENG ◽  
X. ZHU
Keyword(s):  
Content Analysis ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Strong Correlation ◽  
Single Phase ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Electronic States ◽  
Ultra High Vacuum ◽  
X Ray

We have performed an X-ray photoelectron spectroscopy investigation on single-phase samples of Sn -doped YBCO system, together with structure analysis, oxygen content analysis, and superconductivity measurements. The experiment gave evidence that there is a strong correlation between the electronic states of copper and oxygen. When the sample was heated to 600°C for 20 minutes in vacuum chamber, the oxygen escaped from the sample, the binding energy of Cu 2p was decreased, and the two indistinct components of O 1s became clear. Keeping the sample in ultra-high vacuum for 24 hours, a similar result was obtained.

scholarly journals Investigation of interaction of Co, Mn and Fe atoms with the calcite by X-ray photoelectron spectroscopy

2019 ◽  
Vol 64 (1) ◽  
pp. 89-95
Author(s):  
T. T. Magkoev ◽  
V. B. Zaalishvili ◽  
O. G. Burdzieva ◽  
G. E. Tuaev ◽  
G. S. Grigorkina
Keyword(s):  
Solid Solutions ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Surface Compounds ◽  
Adsorption Systems

Adsorption of atoms of Co, Mn, Fe on the calcite surface in ultra-high vacuum and the interaction of the formed adsorption systems with the water have been studied by means of X-ray photoelectron spectroscopy. It is shown that Mn and Fe form solid solutions CaCO3/Mn(Fe)CO3 on the calcite surface, whereas Co preferentially forms CoO and Co3O4. Upon interaction with water the surface compounds formed by Mn and Fe do not undergo notable changes, unlike the Co oxides which partially transform into soluble hydroxylated complexes.

scholarly journals Growth Mode Study of MgCl2 on Ti (0001) and SiO2 under Ultra High Vacuum by XPS

2012 ◽  
Vol 2 (6) ◽  
pp. 291-294
Author(s):  
S. Karakalos
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Magnesium Chloride ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Growth Mode ◽  
X Ray ◽  
Mode Study

The growth mode of MgCl2 on Ti (0001) and on SiO2 grown on Si (100) was investigated by X-ray Photoelectron Spectroscopy (XPS) under UHV conditions. Magnesium chloride grows on both Ti (0001) single crystal and SiO2 following the Frank-van der Merve, (FM) growth mode.

scholarly journals Selective Growth of Al2O3 on Size-Selected Platinum Clusters by Atomic Layer Deposition

2019 ◽  
Author(s):  
Timothy J. Gorey ◽  
Yang Dai ◽  
Scott Anderson ◽  
Sungsik Lee ◽  
Sungwon Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Atomic Layer ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Dimensional Structure ◽  
Alumina Layer ◽  
X Ray ◽  
Layer Deposition

In heterogeneous catalysis, atomic layer deposition (ALD) has been developed as a tool to stabilize and reduce carbon deposition on supported nanoparticles. Here, we discuss use of high vacuum ALD to deposit alumina films on size-selected, sub-nanometer Pt/SiO2 model catalysts. Mass-selected Pt24 clusters were deposited on oxidized Si(100), to form model Pt24/SiO2 catalysts with particles shown to be just under 1 nm, with multilayer three dimensional structure. Alternating exposures to trimethylaluminum and water vapor in an ultra-high vacuum chamber were used to grow alumina on the samples without exposing them to air. The samples were probed in situ using X-ray photoelectron spectroscopy (XPS), low-energy ion scattering spectroscopy (ISS), and CO temperature-programmed desorption (TPD). Additional samples were prepared for ex situ experiments using grazing incidence small angle x-ray scattering spectroscopy (GISAXS). Alumina growth is found to initiate at least 60 times more efficiently at the Pt24 cluster sites, compared to bare SiO2/Si, with a single ALD cycle depositing a full alumina layer on top of the clusters, with substantial additional alumina growth initiating on SiO2 sites surrounding the clusters. As a result, the clusters were completely passivated, with no exposed Pt binding sites.

scholarly journals Microstructure and Optical Properties of E-Beam Evaporated Zinc Oxide Films—Effects of Decomposition and Surface Desorption

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3510
Author(s):  
Lukasz Skowronski ◽  
Arkadiusz Ciesielski ◽  
Aleksandra Olszewska ◽  
Robert Szczesny ◽  
Mieczyslaw Naparty ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Growth Direction ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Force Microscopy ◽  
Zinc Oxide Films

Zinc oxide films have been fabricated by the electron beam physical vapour deposition (PVD) technique. The effect of substrate temperature during fabrication and annealing temperature (carried out in ultra high vacuum conditions) has been investigated by means of atomic force microscopy, scanning electron microscopy, powder X-ray diffraction, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. It was found that the layer deposited at room temperature is composed of Zn and ZnO crystallites with a number of orientations, whereas those grown at 100 and 200 ∘C consist of ZnO grains and exhibit privileged growth direction. Presented results clearly show the influence of ZnO decomposition and segregation of Zn atoms during evaporation and post-deposition annealing on microstructure and optical properties of zinc oxide films.

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface

2006 ◽  
Vol 527-529 ◽  
pp. 673-676 ◽  
Author(s):  
W.Y. Lee ◽  
S. Soubatch ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
X Ray ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Surface Phases ◽  
Low Energy Electron

The atomic structure of the 4H-SiC(11 2 0) surface including possible phase transformations via Si deposition and annealing has been investigated using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The sample is initially prepared by hydrogen etching before loading into the ultra-high vacuum system. The sample is then out-gassed to remove oxygen from the surface. To explore the existence of ordered surface phases, Si is deposited on the sample at 850°C for 15 minutes followed by a series of sequential annealing steps. Throughout this process, the surface is monitored by LEED, AES and XPS. LEED shows that the surface continuously maintains a (1×1) periodicity. Yet, two unique and distinguishable (1×1) phases can be identified. The changes between these phases are clearly demonstrated by the LEED spot intensities. Simultaneously, the Auger and XPS data show a decrease in Si intensity.

A compact UHV X-ray diffractometer for studying surfaces and interfaces

1998 ◽  
Vol 5 (3) ◽  
pp. 887-889
Author(s):  
Yoshikazu Fujii ◽  
Takeshi Nakamura ◽  
Mutsumi Kai ◽  
Kentaroh Yoshida
Keyword(s):  
High Vacuum ◽  
Layer Growth ◽  
Ultra High Vacuum ◽  
Layer By Layer ◽  
Crystal Surfaces ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Optical Table ◽  
Specimen Orientation

A compact ultra-high-vacuum (UHV) X-ray diffractometer for surface glancing X-ray scattering has been constructed. All the equipment, including a rotating-anode source of 18 kW and a UHV specimen chamber, is arranged on one optical table of dimensions 70 × 90 cm. The specimen chamber is 14 cm in diameter and 20 cm high and can be evacuated up to 3 × 10−8 Pa. It is equipped with two Be windows of thicknesses 0.2 and 0.4 mm. Specimen orientation in the vacuum is controlled from the outside. The specimen can be heated up to 773 K. The chamber has two evaporation cells and can be used for in situ observations of growing crystal surfaces. Using this instrument, we observed a mechanically polished Ag surface and successfully made an in situ observation of the layer-by-layer growth of a PbSe(111) surface. The instrument will be useful for preliminary experiments using laboratory sources, prior to final measurements at synchrotron radiation facilities.

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