Indentation Fracture Toughness Measurements of Low Dielectric Constant Materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Dylan J. Morris ◽  
Robert F. Cook
Keyword(s):  
Fracture Toughness ◽  
Film Thickness ◽  
Scaling Laws ◽  
Film Stress ◽  
Low Dielectric ◽  
Fracture Toughness Measurement ◽  
Cube Corner ◽  
Simple Scaling ◽  
Low Dielectric Constant Materials ◽  
Low K

AbstractThe physics and mechanics of a fracture toughness measurement technique for low-k films are described. It has been observed experimentally that it is possible to generate reproducible stable cracks at indentation sites in thin low-k films using cube-corner indentation. The fracture response depends on the film thickness and follows no simple scaling laws. The physics of a model that takes into account the stress fields from indentation and film stress, with particular attention paid to the Poisson's ratio of the film, are described. The model is able to predict the changes in observables when the film thickness is changed, which allows one to estimate film toughness independent of the configuration of the material.

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

Comparison of the Fracture Behavior of Brittle ILD Films used in the BEOL in Dry and Wet Environment using Nanoindentation

2006 ◽  
Vol 914 ◽  
Author(s):  
Eva Simonyi ◽  
Michael Lane ◽  
Erik Liniger ◽  
Alfred Grill
Keyword(s):  
Fracture Toughness ◽  
Film Thickness ◽  
Manufacturing Process ◽  
Fracture Behavior ◽  
Imaging Methods ◽  
Afm Imaging ◽  
Critical Film Thickness ◽  
Low K

AbstractDuring the manufacturing process of the BEOL the low-k brittle ILD dielectrics are exposed to wet environments. These environments could and do affect the films fracture toughness, the so called critical film thickness, above which spontaneous cracking occurs. Nanoindentation combined with AFM imaging methods allow to study these phenomena.

Indentation fracture of low-dielectric constant films: Part II. Indentation fracture mechanics model

2008 ◽  
Vol 23 (9) ◽  
pp. 2443-2457 ◽  
Author(s):  
Dylan J. Morris ◽  
Robert F. Cook
Keyword(s):  
Dielectric Constant ◽  
Film Thickness ◽  
Film Stress ◽  
Low Dielectric Constant ◽  
Silicon Substrates ◽  
Instrumented Indentation ◽  
Indentation Fracture ◽  
Low Dielectric ◽  
Mechanics Model ◽  
Critical Film Thickness

Part I [D.J. Morris and R.F. Cook,J. Mater. Res.23,2429 (2008)] of this two-part work explored the instrumented indentation and fracture phenomena of compliant, low-dielectric constant (low-κ) films on silicon substrates. The effect of film thickness and probe acuity on the fracture response, as well as the apparent connection of this response to the perceived elastic modulus, were demonstrated. These results motivate the creation of a fracture model that incorporates all of these variables here in Part II. Indentation wedging is identified as the mechanism that drives radial fracture, and a correction is introduced that adjusts the wedging strength of the probe for the attenuating influence of the relatively stiff substrate. An estimate of the film fracture toughness can be made if there is an independent measurement of the film stress; if not, a critical film thickness for channel-cracking under the influence of film stress may be estimated.

Channel Cracking Technique For Toughness Measurement Of Sioch Low-K Films

2006 ◽  
Vol 914 ◽  
Author(s):  
Helene Brillet-Rouxel ◽  
Michel Dupeux ◽  
Muriel Braccini ◽  
Stéphane Orain
Keyword(s):  
Stress Intensity Factor ◽  
Stress Intensity ◽  
Intensity Factor ◽  
Film Thickness ◽  
Crack Growth ◽  
Film Stress ◽  
Silicon Substrates ◽  
Four Point Bending ◽  
Rate Versus ◽  
Low K

AbstractThe technique of channel cracking is used to study the crack growth in SiOCH low-k films. Various film thicknesses are produced using consecutive PECVD deposits on silicon substrates in up to the critical thickness for which spontaneous cracks appear. After determining mechanical properties and residual stresses of these films, samples are cleaved, and subjected to four-point bending tests. During the loading in ambient environment, cracks propagate from defects due to cleavage. Propagation of these cracks is observed in situ in order to correlate crack growth velocities to film thickness and total stress in the film. These results allow plotting crack growth rate versus stress intensity factor for crack velocity varying from 10-9 to 10-4 m/s for a stress intensity factor about 0.1 MPa√m. Moreover, in this range of velocities a model is proposed for this material to determine the film stress required to produce channel cracking, for a given film thickness.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

1997 ◽  
Vol 476 ◽  
Author(s):  
Nigel P. Hacker ◽  
Gary Davis ◽  
Lisa Figge ◽  
Todd Krajewski ◽  
Scott Lefferts ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Polymeric Materials ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials ◽  
Low K

Low dielectric constant materials (k < 3.0) have the advantage that higher performance IC devices may be manufactured with minimal increases in chip size. The reduced capacitance given by these materials permits shrinking spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low k applications are CVD or spin-on of inorganic or organic polymeric materials. Traditional spin-on silicates or siloxanes have been used as planarizing dielectrics during the last 15 years and usually have k > 3.0.

scholarly journals Nanoindentation of Silicate Low-K Dielectric Thin Films

2002 ◽  
Vol 716 ◽  
Author(s):  
Joseph B. Vella ◽  
Alex A. Volinsky ◽  
Indira S. Adhihetty ◽  
N.V. Edwards ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Dielectric Constant ◽  
Elastic Modulus ◽  
Percolation Theory ◽  
Scratch Testing ◽  
Dielectric Thin Films ◽  
Cube Corner ◽  
Low K

AbstractThe capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

1999 ◽  
Vol 564 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Prospects for dielectric constant reduction in integrated circuits interconnects

2014 ◽  
Vol 1692 ◽  
Author(s):  
Maxime Darnon ◽  
Nicolas Posseme ◽  
Thierry Chevolleau ◽  
Thibaut L. David
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Inner Surface ◽  
Low Dielectric Constant Materials ◽  
Low K

ABSTRACTTo improve the integrated circuits’ performance and continue the downscaling of dimensions, it is necessary to use low dielectric constant materials as interconnects insulators. Current porous SiCOH low-k dielectrics are now reaching their limits since their porosity enables the diffusion of species that modify the inner surface of the pores. To further reduce the dielectric constant, it is necessary to change paradigm in interconnects fabrication. In this paper, we discuss the most promising innovations in terms of process, materials and architectures to reduce the interconnects insulators dielectric constant.

Application of Nanoindentation to Characterize Fracture in ILD Films Used in the BEOL.

2005 ◽  
Vol 863 ◽  
Author(s):  
Eva E. Simonyi ◽  
E. Liniger ◽  
M. Lane ◽  
Q. Lin ◽  
C. D. Dimitrakopoulos ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Film Thickness ◽  
Low Dielectric Constant ◽  
Cracking Behavior ◽  
Low Dielectric ◽  
Afm Imaging ◽  
Low Modulus ◽  
Critical Film Thickness ◽  
Point Bend ◽  
Cohesive Energies

AbstractIt is of importance to understand cracking behavior in low dielectric constant, low modulus materials. Nanoindentation method is presented as a tool to estimate the critical film thickness, thickness above which spontaneous cracking could occur, for ILD films used in the BEOL. The critical film thickness was then used to calculate cohesive energies and fracture toughness of the films. Materials were investigated using nanoindentation combined with AFM imaging. The results were compared to data acquired by four point bend methods.

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