Detection of Voids in Tungsten Interconnect Vias Using Laser-Induced Surface Acoustic Waves

2003 ◽  
Vol 766 ◽  
Author(s):  
Joshua Tower ◽  
Michael Gostein ◽  
Koichi Otsubo ◽  
Atsushi Kawasaki
Keyword(s):  
Cross Section ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Critical Factor ◽  
Deposition Process ◽  
Film Deposition ◽  
Process Conditions ◽  
Minimal Effect ◽  
Seed Deposition ◽  
Fill Percentage

AbstractTest wafers were prepared under different process conditions of barrier and seed film deposition, in order to study the effects on tungsten plug filling. Tungsten fill percentage was measured using laser-induced surface acoustic wave metrology on plug arrays of varying plug diameter and the results were verified by SEM cross-section. The data show that, for via diameters of 0.12 micron or less, the seed deposition process is a critical factor in effective (void free) plug filling. Seed deposition by ALD and low-temperature CVD were found to be far more effective than conventional CVD. Changing the thickness of the TiN barrier layer was found to have minimal effect on the occurrence of voids. For via diameters greater than 0.12 microns, all of the seed processes led to relatively little voiding.

Surface Acoustic Waves—A New Thin-Film Deposition Approach for Coated Conductors

2016 ◽  
Vol 26 (3) ◽  
pp. 1-4 ◽  
Author(s):  
A. Kirchner ◽  
A. Winkler ◽  
S. M. Menzel ◽  
B. Holzapfel ◽  
R. Huhne
Keyword(s):  
Thin Film ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Coated Conductors

Atomic Layer Deposition of Thin Inorganic Coatings onto Renewable Packaging Materials

2012 ◽  
Vol 185 ◽  
pp. 12-14 ◽  
Author(s):  
Mika Vähä-Nissi ◽  
Terhi Hirvikorpi ◽  
Jenni Sievänen ◽  
Katriina Matilainen ◽  
Erkki Salo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Minor Role ◽  
Process Conditions ◽  
Layer By Layer ◽  
Layer Deposition

Biopolymers play still a relatively minor role in the packaging material markets. For this to grow further there are problems to be solved, such as inadequate barrier properties and moisture sensitivity. Atomic layer deposition (ALD) is one potential solution. Atomic layer deposition is a layer-by-layer thin film deposition process based on self-limiting gas-solid reactions. It is well suited for producing pinhole free barrier coatings uniform in thickness at relatively mild process conditions. The purpose of this presentation is to summarize our recent work done concerning atomic layer deposition of thin aluminum oxide layers onto biopolymers.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Attenuation of surface acoustic waves by quantum dots

1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Brillouin light scattering from surface acoustic waves in photonic microwires

2014 ◽  
Author(s):  
Jean-Charles Beugnot ◽  
Sylvie Lebrun ◽  
Gilles Pauliat ◽  
Vincent Laude ◽  
Thibaut Sylvestre
Keyword(s):  
Light Scattering ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Brillouin Light Scattering
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