GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes

2003 ◽  
Vol 764 ◽  
Author(s):  
F. Yun ◽  
L. He ◽  
M. A. Reshchikov ◽  
H. Morkoç ◽  
J. Jasinski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
Rf Plasma ◽  
Transmission Electron ◽  
Rich Condition ◽  
20 Nm ◽  
Algan Buffer

AbstractGaN layers were grown on AlGaN with nanopipes by molecular beam epitaxy (MBE) and analyzed. AlGaN films were grown by MBE using rf-plasma nitrogen source under metal-rich condition. Within the Al composition range of 0.5-0.6, open-end nanopipes were formed at the surface of AlGaN films with a density of ∼6×109 cm-2 and a size ranging from 10 to 20 nm. These nanopipes, observed within ∼300 nm of the surface, served as a nanoporous AlGaN template for re-growth of GaN epilayers. GaN epilayers grown to different thickness by MBE were studied for their microstructural and optical properties. For an AlGaN buffer layer with dislocation density of 3×1010 cm-2 near its surface, the overlaying GaN layers with thickness ranging from 0.1 μm to ∼2μm were grown and analyzed by transmission electron microscopy for dislocation density. The GaN layer started with hexagonal islands on the nanopiped AlGaN and began to coalesce at about 0.1μm thickness. At a thickness of 2.0 μm, the dislocation density reduced to ∼1×109 cm-2. Low temperature photoluminescence data demonstrate the improved optical quality of GaN epilayer grown on the porous AlGaN buffer layer.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Onojima ◽  
J. Suda ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Epitaxial Relationship ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTAluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

Growth of MgO by Metal-Organic Molecular Beam Epitaxy

1999 ◽  
Vol 606 ◽  
Author(s):  
Feng Niu ◽  
Brent.H. Hoerman ◽  
Bruce.W. Wessels
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Auger Spectrometry ◽  
Metal Organic ◽  
Precursor Decomposition

AbstractMgO thin films were deposited on (100) Si substrates by metal-organic molecular beam epitaxy (MOMBE). Magnesium acetylacetonate was used as the precursor and an oxygen RF plasma was used as the oxidant. The films were characterized by a combination of transmission electron microscopy, Auger spectrometry and atomic force microscopy. Analyses indicate that the films directly deposited on Si substrates are stoichiometric, phase-pure, polycrystalline MgO with a [100] texture. Carbon contamination of the films resulting from precursor decomposition was not observed within detection limits. Furthermore, the growth rate of MgO has been systematically investigated as a function of growth temperature.

Effects of Stress-relieving AlN Interlayers in GaN-on-Si Grown by Plasma-assisted Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Adam Adikimenakis ◽  
Suman-Lata Sahonta ◽  
George Dimitrakopulos ◽  
Jaroslav Domagala ◽  
Philomela Komninou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Stress Relieving ◽  
Gan On Si ◽  
Inversion Domain Boundaries

ABSTRACTThe insertion of an AlN interlayer for tensile strain relief in GaN thin films grown on Si (111) on-axis and vicinal substrates by nitrogen rf plasma source molecular beam epitaxy has been investigated. The 15 nm AlN interlayer was inserted between the bottom 0.5 micron GaN layer and the top 1.0 micron GaN layer. The interlayer was very effective to reduce the tensile stress in the overall 1.5 micron GaN/Si film to the level required for complete avoidance of microcracks, which were present in high densities in GaN/Si heterostructures grown without an AlN interlayer. The strain of the AlN interlayer, as well as the strain in all the layers of the entire GaN/Si heterostructure was analyzed by x-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. Reciprocal space map in XRD indicated that the 15 nm AlN interlayer was coherently strained with the GaN films. However TEM observations revealed that the AlN interlayer was partially relaxed in local regions. The AlN interlayer was also observed to interfere with the GaN growth process. In particular, above morphological features such as V-defects, GaN was overgrown with a large density of threading dislocations and inversion domain boundaries.

ZnSe Growth on Lattice-Matched InxGa1-xAs Substrates

1998 ◽  
Vol 05 (03n04) ◽  
pp. 693-700 ◽  
Author(s):  
S. Heun ◽  
R. Lantier ◽  
J. J. Paggel ◽  
L. Sorba ◽  
S. Rubini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Residual Strain ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Line Emission ◽  
Transmission Electron ◽  
Lattice Matched

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched In x Ga 1-x As buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III–V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (3) ◽  
pp. 952-957 ◽  
Author(s):  
Shinichi Takigawa ◽  
Kei Furuta ◽  
Saburo Shimizu ◽  
Xu-Qiang Shen ◽  
Toshio Kitamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Algan Buffer
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