scholarly journals High-Speed Solar-Blind AlGaN Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Necmi Biyikli ◽  
Ibrahim Kimukin ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Indium Tin Oxide ◽  
High Frequency ◽  
High Speed ◽  
Schottky Contacts ◽  
Spectral Responsivity ◽  
Current Voltage ◽  
Solar Blind ◽  
Schottky Devices ◽  
Gan Heterostructure ◽  
Dark Currents

AbstractWe report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.

scholarly journals High-Performance Solar-Blind AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
High Speed ◽  
High Performance ◽  
Reverse Bias ◽  
Blind Detection ◽  
Spectral Responsivity ◽  
Noise Floor ◽  
Current Voltage ◽  
Solar Blind ◽  
Dark Currents ◽  
Device Responsivity

High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN hetero-structures using a microwave-compatible fabrication process. Current-voltage, spectral responsivity, noise, and high-speed characteristics of the detectors were measured and analyzed. Dark currents lower than 1 pA at bias voltages as high as 30 V were obtained. True solar-blind detection was achieved with a cut-off wavelength lower than 266 nm. A peak device responsivity of 78 mA/W at 250 nm was measured under 15 V reverse bias. A visible rejection of more than 4 orders of magnitude was observed. The solar-blind photodiodes exhibited noise densities below the measurement setup noise floor of 3×10−29 A2/Hz around 10 KHz. High-speed measurements at the solar-blind wavelength of 267 nm resulted in 3-dB bandwidths as high as 870 MHz.

scholarly journals High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

2003 ◽  
Vol 82 (14) ◽  
pp. 2344-2346 ◽  
Author(s):  
Necmi Biyikli ◽  
Ibrahim Kimukin ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Schottky Contacts ◽  
Solar Blind

scholarly journals High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
High Performance ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

scholarly journals High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind ◽  
Fast Pulse

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Study of Flow Boiling Characteristics of a Microchannel Using High Speed Visualization

2013 ◽  
Vol 135 (8) ◽  
Author(s):  
Rashid Ali ◽  
Björn Palm ◽  
Claudi Martin-Callizo ◽  
Mohammad H. Maqbool
Keyword(s):  
Heat Flux ◽  
Flow Pattern ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Liquid Velocity ◽  
Flow Boiling ◽  
Fused Silica ◽  
Internal Diameter ◽  
Electrically Conductive ◽  
Heated Length

This paper presents the visualization results obtained for an experimental study of R134a during flow boiling in a horizontal microchannel. The microchannel used was a fused silica tube having an internal diameter of 781 μm, a heated length of 191 mm, and was coated with a thin, transparent, and electrically conductive layer of indium-tin-oxide (ITO) on the outer surface. The operating parameters during the experiments were: mass flux 100–400 kg/m2 s, heat flux 5–45 kW/m2, saturation temperatures 25 and 30 °C, corresponding to saturation pressures of 6.65 bar and 7.70 bar and reduced pressures of 0.163 and 0.189, respectively. A high speed camera with a close up lens was used to capture the flow patterns that evolved along the channel. Flow pattern maps are presented in terms of the superficial gas and liquid velocity and in terms of the Reynolds number and vapor quality plots. The results are compared with some flow pattern maps for conventional and micro scale channels available in the literature. Rigorous boiling and increased coalescence rates were observed with an increase in the heat flux.

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