Maskless Patterning of Mo and Si by Focused Ion Beam Implantation

1986 ◽  
Vol 76 ◽  
Author(s):  
Kenji Gamo ◽  
Katsuyuki Yonehara ◽  
Shohei Nagatomo ◽  
Susumu Namba
Keyword(s):  
Plasma Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Chemical Properties ◽  
Sample Surface ◽  
Tone Pattern ◽  
Patterning Technique ◽  
Maskless Patterning ◽  
Higher Doses

ABSTRACTMaskless patterning of Mo and Si was done by implanting 50 keV focused Ga+ ion beam and by plasma etching using CF4 gas. The implantation is done to modify the chemical properties of the sample surface. It was found that Mo films became etch-resistant for the plasma etching after implantation at a dose higher than 4×1015 /cm2. Si crystals showed a positive tone pattern due to a radiation enhanced etching at a dose lower than 5x1016/cm2. At higher doses, the etching rate decreased and above 8 x 1016/cm2, no etching was observed in the implanted region. Patterns with a thickness of a several hundred nanometers were formed by the present maskless patterning technique.

Maskless Patterning of Cr Films Using Focused Ion Beams

1983 ◽  
Vol 27 ◽  
Author(s):  
K. Gamo ◽  
K. Moriizumi ◽  
T. Matsui ◽  
S. Namba
Keyword(s):  
Ion Implantation ◽  
Plasma Etching ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Latent Image ◽  
Sharp Threshold ◽  
Patterning Technique ◽  
Resistant Layer ◽  
Maskless Patterning

ABSTRACTCharacteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated. Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CCl4 were measured. Sb profiles were also measured by Rutherford backscattering techniques. It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation. It was also found that a latent image of an Sb implanted pattern at a dose ≥3.8×1015/cm2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

scholarly journals Localizing Heat-Generating Defects Using Fluorescent Microthermal Imaging

1996 ◽  
Author(s):  
P. Tangyunyong ◽  
A.Y. Liang ◽  
A.W. Righter ◽  
D.L. Barton ◽  
J.M. Soden
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Uv Light ◽  
Ion Beam ◽  
Sample Surface ◽  
Analysis Tool ◽  
Temperature Dependent ◽  
Root Cause ◽  
Ideal Situation ◽  
Sem Imaging

Abstract Fluorescent microthermal imaging (FMI) involves coating a sample surface with a thin fluorescent film that, upon exposure to UV light source, emits temperature-dependent fluorescence [1-7]. The principle behind FMI was thoroughly reviewed at the ISTFA in 1994 [8, 9]. In two recent publications [10,11], we identified several factors in film preparation and data processing that dramatically improved the thermal resolution and sensitivity of FMI. These factors include signal averaging, the use of base mixture films, film stabilization and film curing. These findings significantly enhance the capability of FMI as a failure analysis tool. In this paper, we show several examples that use FMI to quickly localize heat-generating defects ("hot spots"). When used with other failure analysis techniques such as focused ion beam (FIB) cross sectioning and scanning electron microscope (SEM) imaging, we demonstrate that FMI is a powerful tool to efficiently identify the root cause of failures in complex ICs. In addition to defect localization, we use a failing IC to determine the sensitivity of FMI (i.e., the lowest power that can be detected) in an ideal situation where the defects are very localized and near the surface.

scholarly journals Electrical and Chemical Characterization of FIB-Deposited Insulators

1997 ◽  
Author(s):  
A. N. Campbell ◽  
D. M. Tanner ◽  
J. M. Soden ◽  
D. K. Stewart ◽  
A. Doyle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Properties ◽  
Chemical Characterization ◽  
Breakdown Field ◽  
Gate Oxides ◽  
Spectrometry Analysis ◽  
Metal Insulator Metal

Abstract The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

scholarly journals Maskless Patterning of Gallium-Irradiated Superconducting Silicon Using Focused Ion Beam

2020 ◽  
Vol 2 (3) ◽  
pp. 677-682
Author(s):  
Ryo Matsumoto ◽  
Shintaro Adachi ◽  
El Hadi S. Sadki ◽  
Sayaka Yamamoto ◽  
Hiromi Tanaka ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Maskless Patterning

IN SITU ION BEAM ANALYSIS OF CHEMICAL AND PLASMA ETCHING OF Si

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1419-1427
Author(s):  
KARUR R. PADMANABHAN
Keyword(s):  
Plasma Etching ◽  
Chemical Etching ◽  
Ion Beam ◽  
Etching Rate ◽  
Surface Damage ◽  
Moderate Increase ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Etched Surface

The possibility of carrying out in situ ion beam analysis of a gas-solid interface using RBS/Channeling techniques has been investigated using chemical and plasma etching of Si . A specially constructed thin Si window cell is used to initiate chemical etching of Si using Xe F 2. Analysis of etched Si surface using conventional, micro RBS/Channeling and computer simulated channeling spectra indicates a smooth damage free surface with fairly uniform etching. A moderate increase in etching rate and channeling χ min is observed in the presence of the analyzing beam. The results of chemical etching are compared with that due to Ar + and Xe + plasma induced etching of Si . In situ microbeam channeling analysis with CCM (Channeling Contrast Microscopy) of the plasma-etched surface indicates distinct differences in both etching rate and damage profile of Si (100) surface. The etching rate enhancement and damage profile have been explained using conventional TRIM analysis and ion beam surface damage.

Two-step modified NERIME process using combined focused ion beam lithography and plasma etching

2003 ◽  
Author(s):  
Khalil Arshak ◽  
Miroslav Mihov ◽  
Arous Arshak ◽  
Declan McDonagh ◽  
David Sutton ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

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