A Silicon Field Emitter Array Planar Vacuum FET Fabricated with Microfabrication Techniques

1986 ◽  
Vol 76 ◽  
Author(s):  
Henry F. Gray ◽  
G. J. Campisi
Keyword(s):  
Electron Tunneling ◽  
Field Emitter ◽  
New Device ◽  
New Class ◽  
Field Emitter Arrays ◽  
Field Emitters ◽  
Circuit Integration ◽  
Submicron Structures ◽  
New Type ◽  
Microfabrication Techniques

ABSTRACTIn this paper we will discuss a new type of field effect transistor, a vacuum FET, where the usual channel material is the vacuum rather than a semiconductor. This new device is based on Field Emitter Arrays (FEA) which are inherently submicron structures. That is, the field emitters themselves must have dimensions less that 0.1 micrometers in order to generate the high electrostatic fields necessary for electron tunneling, and the control gate (or extraction electrode) must be very close to the field emitter tip in order to generate these high fields with reasonable voltages. Consequently, this new “FET” is the first of a new class of vaccum electronic switching devices based on microfabrication techniques, and susceptible to circuit integration.

New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Thin Film Transistor ◽  
Emission Current ◽  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
New Device ◽  
Channel Current ◽  
Field Emitter Arrays ◽  
Second Mode ◽  
Excellent Stability

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

Emission and Processing Requirements for Carbide Films on Mo Field Emitters

1998 ◽  
Vol 509 ◽  
Author(s):  
W. A. Mackie ◽  
Tianbao Xie ◽  
M.R. Matthews ◽  
P. R. Davis
Keyword(s):  
Electron Emission ◽  
Thermionic Emission ◽  
Hydrogen Atmosphere ◽  
Field Emitter ◽  
Electron Sources ◽  
Field Emitter Arrays ◽  
Ion Thrusters ◽  
Field Emitters ◽  
Carbide Coatings ◽  
Small Spot

AbstractWe have been working for many years on electron emission and surface properties of transition metal carbides. These studies have covered field, photo, and thermionic emission from bulk carbides as well as field and photo emission from carbide coatings and films on various substrates. Thin film carbide overcoatings have also been used on field emitter arrays of both Mo and Si. These unique carbide materials have electron emission properties making them attractive candidates for several applications. Uses for these carbides include FEA video displays, microwave applications, high current and small spot electron sources (e.g. accelerators and FELs), and cold cathodes for operation at tube pressures and in poor vacuums (e.g. FEAs, vacuum detectors, and neutralizing beams for ion thrusters).We report here on one aspect of our current research which deals with electron emission of ZrC films coating single Mo field emitters. The relevant application is Spindt-type field emitter arrays. Processing steps are evaluated showing the need for a clean substrate. After deposition treatments are also investigated. Emission degradation has been noted after exposure to air and we report on successful use of a hydrogen atmosphere to reverse those adverse effects.

Silicon Field Emitter Array by Fast Anodization Method

2000 ◽  
Vol 621 ◽  
Author(s):  
Y.M. Fung ◽  
W.Y. Cheung ◽  
I.H. Wilson ◽  
J.B. Xu ◽  
S.P. Wong
Keyword(s):  
Current Density ◽  
Silicon Oxide ◽  
Emission Current Density ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Isotropic Etching ◽  
Field Emitters ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

Design of a Field-Emission Gun for the Phillips CM20/STEM microscope

1990 ◽  
Vol 48 (2) ◽  
pp. 100-101
Author(s):  
P.M. Mul ◽  
B.J.M. Bormans ◽  
L. Schaap
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Analytical Electron Microscopy ◽  
Emission Region ◽  
Attractive Alternative ◽  
Electron Holography ◽  
Field Emitter ◽  
Field Emitters ◽  
Resolution Electron ◽  
High Resolution Tem

The first Field Emission Guns (FEG) on TEM/STEM instruments were introduced by Philips in 1977. In the past decade these EM400-series microscopes have been very successful, especially in analytical electron microscopy, where the high currents in small probes are particularly suitable. In High Resolution Electron Holography, the high coherence of the FEG has made it possible to approach atomic resolution.Most of these TEM/STEM systems are based on a cold field emitter (CFE). There are, however, a number of disadvantages to CFE’s, because of their very small emission region: the maximum current is limited (a strong disadvantage for high-resolution TEM imaging) and the emission is unstable, requiring special measures to reduce the strong FEG-induced noise. Thermal field emitters (TFE), i.e. a zirconiated field emitter source operating in the thermal or Schottky mode, have been shown to be a viable and attractive alternative to CFE’s. TFE’s have larger emission regions, providing much higher maximum currents, better stability, and reduced sensitivity to vacuum conditions as well as mechanical and electrical interferences.

Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays

2007 ◽  
Vol 90 (8) ◽  
pp. 083506 ◽  
Author(s):  
Chin-Jen Chiang ◽  
Kendrick X. Liu ◽  
Jonathan P. Heritage
Keyword(s):  
Field Emission ◽  
Field Emitter ◽  
Field Emitter Arrays

Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6926-6931 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Tzu-Kun Ku ◽  
Biing-Bang Hsieh ◽  
Sheng-Hsiung Chen ◽  
Shye-Yuh Leu ◽  
...  
Keyword(s):  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization
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