Versatile Nanodeposition of Dielectrics and Metals by Non-contact Direct-Write Technology

2002 ◽  
Vol 758 ◽  
Author(s):  
H. D. Wanzenboeck ◽  
H. Langfischer ◽  
S. Harasek ◽  
B. Basnar ◽  
H. Hutter ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Dielectric Material ◽  
Ion Beam ◽  
Solid Material ◽  
Direct Write ◽  
Micro Electro Mechanical Systems ◽  
3 Dimensional ◽  
Deposition Parameters

ABSTRACTDirect-write techniques allow processing in the nanometer range and have become powerful methods for rapid prototyping of microelectronic circuits and micro-electro-mechanical systems (MEMS). Chemical reactions are initiated by a focused beam leading to deposition of solid material on literally any surface. We have used this method to deposit metals such as tungsten and dielectrics such as silicon oxide using a focused ion beam (FIB) with 10 to 50 kV acceleration voltage. Controlled guidance of the beam allows deposition of both metallic and dielectric material with features in the 100 nm range. The deposition of separate structures of metallic and dielectric material deposited next to each other is shown on samples of different roughness. 3-dimensional exemplary prototypes in the sub-μm range and multilayer structures demonstrate the versatility of this method for prototyping and mix-and-match approaches with commercial semiconductor devices. A characterization of the deposited material was performed to clarify chemical composition and surface morphology of deposited structures. The deposition parameters were found to influence the chemical composition and electronic properties of the material. Direct-write deposition of dielectrics and metals by FIB allows fabrication of 3-dimensional prototypes with custom-tailored material properties.

Deposition Mechanism of Oxide Thin Films Manufactured by a Focused Energetic Beam Process

2002 ◽  
Vol 749 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
S. Harasek ◽  
H. Langfischer ◽  
E. Bertagnolli
Keyword(s):  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Solid Material ◽  
Sample Surface ◽  
Direct Write ◽  
Large Area ◽  
Mixture Ratio ◽  
Process Energy

ABSTRACTChemical vapor deposition (CVD) is a versatile deposition technique for both dielectrics and metals. CVD is based upon the adsorption of a volatile species from the gas phase and the decomposition of the adsorbed molecules on the sample surface resulting in the deposition of solid material. In contrast to thermal CVD or plasma assisted CVD used for large area coatings this work focuses on a method for locally confined deposition. A focused energetic beam is used to provide the necessary activation energy for CVD. With a focused beam material could be deposited locally within a strictly confined area down to the nanometer range. The deposition of silicon oxide microstructures utilizing two precursor gases - siloxane and oxygen - was performed by direct-write nanolithography. For initiating the CVD process energy is introduced by local ion exposure utilizing a scanning focused ion beam (FIB). The influence of the different ion fluxes and the effect of the mixture ratio of precursors were studied. Deliberate changes in the process parameters allowed adjusting the physical properties and the chemical composition of the solid silicon oxide. Process control allows tailoring of material properties according to requirements of the application.

scholarly journals Kerogen nanoscale structure and CO2 adsorption in shale micropores

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aleksandra Gonciaruk ◽  
Matthew R. Hall ◽  
Michael W. Fay ◽  
Christopher D. J. Parmenter ◽  
Christopher H. Vane ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Composition ◽  
Focused Ion Beam ◽  
Gas Adsorption ◽  
Ion Beam ◽  
Molecular Size ◽  
Gas Sorption ◽  
Nanoscale Structures ◽  
Adsorption Sites ◽  
Nanoscale Structure

AbstractGas storage and recovery processes in shales critically depend on nano-scale porosity and chemical composition, but information about the nanoscale pore geometry and connectivity of kerogen, insoluble organic shale matter, is largely unavailable. Using adsorption microcalorimetry, we show that once strong adsorption sites within nanoscale network are taken, gas adsorption even at very low pressure is governed by pore width rather than chemical composition. A combination of focused ion beam with scanning electron microscopy and transmission electron microscopy reveal the nanoscale structure of kerogen includes not only the ubiquitous amorphous phase but also highly graphitized sheets, fiber- and onion-like structures creating nanoscale voids accessible for gas sorption. Nanoscale structures bridge the current gap between molecular size and macropore scale in existing models for kerogen, thus allowing accurate prediction of gas sorption, storage and diffusion properties in shales.

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write

scholarly journals A modular platform for automated cryo-FIB workflows

eLife ◽  
2021 ◽  
Vol 10 ◽  
Author(s):  
Sven Klumpe ◽  
Herman K H Fung ◽  
Sara K Goetz ◽  
Ievgeniia Zagoriy ◽  
Bernhard Hampoelz ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Structural Integrity ◽  
Electron Tomography ◽  
Ion Beam ◽  
Light And Electron Microscopy ◽  
Software Tool ◽  
3 Dimensional ◽  
Improved Stability ◽  
Modular Platform ◽  
Beam Currents

Lamella micromachining by focused ion beam milling at cryogenic temperature (cryo-FIB) has matured into a preparation method widely used for cellular cryo-electron tomography. Due to the limited ablation rates of low Ga+ ion beam currents required to maintain the structural integrity of vitreous specimens, common preparation protocols are time-consuming and labor intensive. The improved stability of new generation cryo-FIB instruments now enables automated operations. Here, we present an open-source software tool, SerialFIB, for creating automated and customizable cryo-FIB preparation protocols. The software encompasses a graphical user interface for easy execution of routine lamellae preparations, a scripting module compatible with available Python packages, and interfaces with 3-dimensional correlative light and electron microscopy (CLEM) tools. SerialFIB enables the streamlining of advanced cryo-FIB protocols such as multi-modal imaging, CLEM-guided lamella preparation and in situ lamella lift-out procedures. Our software therefore provides a foundation for further development of advanced cryogenic imaging and sample preparation protocols.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

FIB and TEM Studies on the Bainitic Microstructure in Low Carbon HSLA Steels

2007 ◽  
Vol 26-28 ◽  
pp. 73-76 ◽  
Author(s):  
J.S. Kang ◽  
S.S. Ahn ◽  
C.Y. Yoo ◽  
Chan Gyung Park
Keyword(s):  
Acicular Ferrite ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Bainitic Ferrite ◽  
Granular Bainite ◽  
Low Carbon ◽  
3 Dimensional ◽  
Hsla Steels ◽  
Bainitic Microstructure ◽  
Lath Structure

In the present study, focused ion beam (FIB) technique was applied to make site-specific TEM specimens and to identify the 3-dimensional grain morphologies of bainitic microstructure in low carbon HSLA steels such as granular bainite, acicular ferrite and bainitic ferrite. Granular bainite consisted of fine subgrains and 2nd phase constituents like M/A or pearlite located at grain and subgrain boundaries. Acicular ferrite was characterized by an aggregate of ramdomly orientated and irregular shaped grains. The high angle boundaries between adjacent acicular ferrite grains caused by intragranular nucleation during continuous cooling process. Bainitic ferrite revealed uniform and parallel lath structure within the prior austenite grain boundaries and its’ packet size could effectively decreased by the formation of intragranular acicular ferrite.

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

scholarly journals Focused Ion Beam Direct Write Nanofabrication of Surface Phonon Polariton Metamaterial Nanostructures

2014 ◽  
Vol 20 (S3) ◽  
pp. 358-359 ◽  
Author(s):  
N. D. Bassim ◽  
A. Giles ◽  
J. D. Caldwell ◽  
L. E. Ocola
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write ◽  
Surface Phonon ◽  
Surface Phonon Polariton

Commercial Applications and Review for Direct Write Technologies

2000 ◽  
Vol 624 ◽  
Author(s):  
Kenneth H. Church ◽  
Charlotte Fore ◽  
Terry Feeley
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Direct Write ◽  
Laser Chemical Vapor Deposition ◽  
The Past ◽  
Design Engineers ◽  
True Value ◽  
Making A Difference ◽  
Commercial Applications

ABSTRACTDirect write in the past has generated the excitement of possibly replacing photoresist for all electronic applications. Removing the mask would substantially reduce the number of steps required to produce electronic circuits. A reduction in steps represented time and dollar savings. The advantage of being able to direct write a manufacturable device would also save time and money in the design process as well. With all of the obvious advantages, it seemed inevitable that research dollars would continue to mount and thus overcome the obstacles preventing this technology from becoming more than a novel technique used in laboratories. As Moore's law began to settle in, so did photoresist and direct write was little more than a novelty.That was then, and this is now. Developers have come to terms with the true value direct write can supply to the manufacturers and design engineers. Techniques such as Focused Ion Beam (FIB), Laser Chemical Vapor Deposition (LCVD), ink jetting and ink penning have found real applications that are making a difference in industry. A summary will be presented describing the various direct write techniques, their current applications and the possible or probable applications.

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