UV Photon-Assisted Refractory Metal Deposition

1986 ◽  
Vol 75 ◽  
Author(s):  
G. A. Kovall ◽  
J. C. Matthews ◽  
R. Solanki
Keyword(s):  
Silicon Dioxide ◽  
Refractory Metal ◽  
High Intensity ◽  
Metal Deposition ◽  
Silicon Wafers ◽  
Mercury Lamp ◽  
Medium Pressure ◽  
Tungsten Hexafluoride ◽  
Ultraviolet Photons ◽  
Photon Source

AbstractWe have been investigating deposition of tungsten and molybdenum films at lover temperatures than conventional CVD processes with the aid of ultraviolet photons. The photon source is a high intensity, medium-pressure mercury lamp. W and Mo films have been deposited from their respective hexacarbonyls. W films have also been obtained by photon enhanced reduction of tungsten hexafluoride. In all cases films were deposited over 75 mm diameter substrates, which included quartz, silicon dioxide, and silicon wafers. The deposition system, conditions and the properties of the photodeposited films are presented.

The Photolysis of Matrix Isolated cis-Thionylimide. 1. The Identification and Infrared Spectra of cis-HOSN, HSNO, and SNO

1975 ◽  
Vol 53 (15) ◽  
pp. 2318-2330 ◽  
Author(s):  
Peter O. Tchir ◽  
Richard D. Spratley
Keyword(s):  
Reaction Time ◽  
Infrared Spectra ◽  
Force Fields ◽  
Reaction Scheme ◽  
Isotopic Substitution ◽  
Mercury Lamp ◽  
Reaction Sequence ◽  
Medium Pressure ◽  
Argon Matrices

cis-HNSO has been photolyzed in argon matrices using a medium pressure mercury lamp. Examination of the infrared spectra has revealed the presence of four photolysis products. With the aid of isotopic substitution these species have been identified as cis-HOSN, cis-HSNO, trans-HSNO, and SNO, all previously unknown. Assignments have been made for all four products and force fields calculated for cis-HOSN and trans-HSNO. The following reaction scheme has been postulated for the photolysis induced process: cis-HNSO → cis-HOSN → cis-HSNO + trans-HSNO → SNO. The extent of this reaction sequence has been found to depend on reaction time and photolysis energy.

Structural Modifications of nc-Si/SiO2 Superlattices by Localized Photo-induced Heating

2004 ◽  
Vol 832 ◽  
Author(s):  
B. V. Kamenev ◽  
H. Grebel ◽  
L. Tsybeskov ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Dioxide ◽  
Laser Irradiation ◽  
High Intensity ◽  
Nanocrystalline Silicon ◽  
Structural Modifications ◽  
High Intensity Laser ◽  
Melting Threshold ◽  
Intensity Laser ◽  
Silicon Silicon ◽  
Pulsed Irradiation

ABSTRACTStructural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO2) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5–8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11–15 mJ/cm2 for pulsed irradiation by 248 nm, π∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.

Development of high intensity multibeam laser metal deposition system with blue diode lasers for additively manufacturing of copper rod

2021 ◽  
Vol 33 (4) ◽  
pp. 042014
Author(s):  
Kazuhiro Ono ◽  
Yuji Sato ◽  
Yuma Takazawa ◽  
Yuki Morimoto ◽  
Keisuke Takenaka ◽  
...  
Keyword(s):  
High Intensity ◽  
Diode Lasers ◽  
Metal Deposition ◽  
Laser Metal Deposition

scholarly journals Comparison Between Different Ways in Making Silicon Dioxide Layer on Silicon Wafers

2016 ◽  
Vol 88 ◽  
pp. 01009
Author(s):  
Chenguang Sun ◽  
Yanjun Wang ◽  
Qiang Xu ◽  
Xuenan Zhang ◽  
Zhenfu Liu
Keyword(s):  
Silicon Dioxide ◽  
Silicon Wafers ◽  
Silicon Dioxide Layer

scholarly journals Photolysis of HNCO vapor in the presence of NO and O2

1968 ◽  
Vol 46 (4) ◽  
pp. 531-534 ◽  
Author(s):  
R. A. Back ◽  
R. Ketcheson
Keyword(s):  
Steady Increase ◽  
Hydrogen Yield ◽  
Mercury Lamp ◽  
Hydrogen Atoms ◽  
Medium Pressure ◽  
Absorption Of Light

The effect of NO at pressures up to 380 Torr on the photolysis of HNCO vapor (4.5 Torr) by light from an unfiltered medium-pressure mercury lamp has been studied at 37 °C. The yield of CO was reduced to about half its original value, which is attributed to reactions of NH and NCO with NO. The yield of N2 showed a steady increase with increasing NO pressure, probably due to reactions of NO(A2∑+) excited by absorption of light. The hydrogen yield fell rapidly to zero as the NO pressure was increased.Added oxygen at pressures up to 5 Torr had no effect on the CO and N2 production at 37 °C; at 110 °C the CO yield decreased somewhat while the N2 remained unaffected. These observations suggest that NH and NCO do not react readily with O2. The production of H2 fell rapidly to zero with increasing O2 pressure at both temperatures. The suppression of H2 formation by both NO and O2 supports the belief that it is formed by reactions of hydrogen atoms.

Photorearrangement of trans-1,1′:3,4-Diepoxy-1-methyl-2-tetralone, an α,β:α′,β′- diepoxyketone

1972 ◽  
Vol 25 (10) ◽  
pp. 2185 ◽  
Author(s):  
DS Schneider ◽  
FW Eastwood
Keyword(s):  
Mercury Lamp ◽  
Medium Pressure

Irradiation of trans-l,l':3,4-diepoxy-1-methyl-2-tetralone (1) with a medium-pressure mercury lamp yielded 2,3-dihydroxy-1-naphthaldehyde (2), 2,4-dihydroxy-1-naphthaldehyde (3), and 3-(2'-hydroxyphenyl)-4H-pyran-4-one(4).

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