Ferroelectric Oxide Single-Crystalline Layers by Wafer Bonding and Hydrogen/Helium Implantation

2002 ◽  
Vol 748 ◽  
Author(s):  
Ionut Radu ◽  
Izabela Szafraniak ◽  
Roland Scholz ◽  
Marin Alexe ◽  
Ulrich Gösele
Keyword(s):  
Single Crystals ◽  
Wafer Bonding ◽  
Small Area ◽  
Layer Transfer ◽  
Optimum Conditions ◽  
Large Area ◽  
Single Crystalline ◽  
Helium Implantation ◽  
Post Implantation ◽  
Ferroelectric Oxide

ABSTRACTLayer splitting by helium and/or hydrogen and wafer bonding was applied for the transfer of thin single-crystalline ferroelectric oxide layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO3, LaAlO3, SrTiO3 single crystals and transparent PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted oxides. Small area single-crystal oxide layer transfer was successfully achieved.

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

2010 ◽  
Vol 39 (10) ◽  
pp. 2233-2236 ◽  
Author(s):  
Ki Yeol Byun ◽  
Isabelle Ferain ◽  
Scott Song ◽  
Susan Holl ◽  
Cindy Colinge
Keyword(s):  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Layer Transfer ◽  
Single Crystalline

Wafer Bonding and Layer Transfer For Thin Film Ferroelectrics

2002 ◽  
Vol 748 ◽  
Author(s):  
Jennifer L. Ruglovsky ◽  
Young-Bae Park ◽  
Cecily A. Ryan ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystals ◽  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Sacrificial Layer ◽  
Bubble Formation ◽  
Ferroelectric Materials ◽  
Silicon Substrates ◽  
Layer Transfer

ABSTRACTWe report on the layer transfer of thin ferroelectric materials onto silicon substrates. H+ and He+ ion implantation created a buried sacrificial layer in the c-cut BaTiO3 and LiNbO3 single crystals. Bubble formation and thermodynamics of cavity at the bonding interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting.

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

2006 ◽  
Vol 21 (9) ◽  
pp. 1311-1314 ◽  
Author(s):  
R Singh ◽  
I Radu ◽  
R Scholz ◽  
C Himcinschi ◽  
U Gösele ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Layer Transfer ◽  
Direct Wafer Bonding ◽  
Helium Implantation

Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin Film Layer Transfer Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Rajendra Singh ◽  
R. Scholz ◽  
S. H. Christiansen ◽  
U. Goesele
Keyword(s):  
Thin Film ◽  
High Dose ◽  
Layer Transfer ◽  
Large Area ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Thin Film Layer ◽  
Hydrogen Implantation ◽  
Film Layer ◽  
Post Implantation

ABSTRACTHigh dose hydrogen implantation-induced blistering phenomena in GaN and AlN have been investigated for potential thin film layer transfer applications. GaN and AlN were implanted with 100 keV H2+ ions with various ion doses in the range of 5´1016 to 2.5´1017 cm−2. After implantation the samples were annealed at higher temperatures up to 800°C in order to observe the formation of surface blisters. In the case of GaN only those samples that were implanted with a dose of 1.3´1017 cm−2 or higher showed surface blistering after post-implantation annealing. For AlN the samples those were implanted with a dose of 1.0´1017 or 1.5´1017 cm−2 displayed surface blistering after post-implantation annealing. Cross-sectional transmission electron microscopy was utilized to observe the microscopic defects that eventually cause surface blistering. Large area microcracks, as revealed in the XTEM images, were clearly observed in the case of both GaN and AlN after post-implantation annealing. A comparison of the hydrogen implantation-induced blistering in GaN and AlN has also been presented.

Study of potential oscillations during reaction of an aluminium single crystal with an aqueous KOH solution

1990 ◽  
Vol 55 (2) ◽  
pp. 345-353 ◽  
Author(s):  
Ivan Halaša ◽  
Milica Miadoková
Keyword(s):  
Aqueous Solutions ◽  
Single Crystal ◽  
Single Crystals ◽  
Periodic Potential ◽  
Optimum Conditions ◽  
Potential Oscillations ◽  
Dilute Aqueous Solutions ◽  
Experimental Findings ◽  
Kinetics Of

The authors investigated periodic potential changes measured on oriented sections of Al single crystals during spontaneous dissolution in dilute aqueous solutions of KOH, with the aim to find optimum conditions for the formation of potential oscillations. It was found that this phenomenon is related with the kinetics of the reaction investigated, whose rate also changed periodically. The mechanism of the oscillations is discussed in view of the experimental findings.

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching

2011 ◽  
Vol 679-680 ◽  
pp. 777-780 ◽  
Author(s):  
Shoji Ushio ◽  
Ayumu Adachi ◽  
Kazuhiro Matsuda ◽  
Noboru Ohtani ◽  
Tadaaki Kaneko
Keyword(s):  
High Temperature ◽  
Graphene Layer ◽  
Treatment Method ◽  
Etch Depth ◽  
High Temperature Annealing ◽  
Large Area ◽  
Vapor Flux ◽  
Precise Control ◽  
Post Implantation

As a new graphene functionality applicable to post-implantation high temperature annealing of SiC, a method of in situ formation and removal of large area epitaxial few-layer graphene on 4H-SiC(0001) Si-face is proposed. It is demonstrated that the homogeneous graphene layer formed by Si sublimation can be preserved without the decomposition of the underlying SiC substrate even in the excess of 2000 oC in ultrahigh vacuum. It is due to the existence of the stable (6√3×6√3) buffer layer at the interface. To ensure this cap function, the homogeneity of the interface must be guaranteed. In order to do that, precise control of the initial SiC surface flatness is required. Si-vapor etching is a simple and versatile SiC surface pre/post- treatment method, where thermally decomposed SiC surface is compensated by a Si-vapor flux from Si solid source in the same semi-closed TaC container. While this Si-vapor etching allows precise control of SiC etch depth and surface step-terrace structures, it also provides a “decap” function to remove of the graphene layer. The surface properties after the each process were characterized by AFM and Raman spectroscopy.

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