Co-doping Deposition of p-type ZnO Thin Films using KrF Excimer Laser Ablation

2002 ◽  
Vol 747 ◽  
Author(s):  
Kenji Ebihara ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Jes Asumussen ◽  
Raj K. Thareja
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Axis Orientation ◽  
Excimer Laser Ablation ◽  
Co Doping ◽  
Doped Zno ◽  
Krf Excimer Laser ◽  
P Type ◽  
Nitrogenous Gases

ABSTRACTWe report on the attempt to fabricate p-type ZnO thin films using various doping techniques based on the pulsed laser deposition (PLD). As an accepter, we have doped the N atom by using high purity nitric monoxide (NO) ambient gas. NO is dissociated into N and O at an energy of 6.5 eV which is lower than at N2 (9.76 eV). Moreover the dissociation reaction of NO is simpler than other nitrogenous gases such as N2O, NO2, and NH3. One of our doping techniques is co-doping of Ga and N atom by ablating ZnO:Ga target in NO gas, and another is the ablation of the metal Zn target in NO gas. Both of Ga and N co-doped ZnO films and N doped ZnO films have c-axis orientation as well as undoped ZnO films. The surfaces of these doped films are rough while the undoped ZnO thin film is very smooth and have hexagonally shaped grains. We found it possible to fabricate the p-type ZnO film by ablating the metal Zn target in NO gas.

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

Preparation of N Doped ZnO Films by Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 348-351
Author(s):  
Shan Shan Luo ◽  
Wen Kui Li ◽  
Ze Hua Zhou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Flow Rate ◽  
Zno Thin Films ◽  
Zno Films ◽  
Al Doping ◽  
Co Doping ◽  
N Doping ◽  
Doped Zno

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

2018 ◽  
Vol 280 ◽  
pp. 43-49
Author(s):  
Zi Neng Ng ◽  
Kah Yoong Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Films ◽  
Axis Orientation ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.

Influence of Annealing and Europium-Doping on the Structure and Optical Properties of ZnO Thin Films Grown on Quartz Substrate by Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 667-672 ◽  
Author(s):  
Q. Q. Dai ◽  
L. Luo ◽  
F. Y. Huang ◽  
D. P. Xiong ◽  
X.G. Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Transfer ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Efficient Energy Transfer ◽  
Axis Orientation ◽  
Efficient Energy ◽  
Doped Zno

ZnO and Eu-doped ZnO thin films were deposited on quartz substrates by reactive radio-frequency magnetron sputtering from a ZnO and Eu-doped ZnO ceramic target respectively. The properties of thin films were characterized by atom force microscope (AFM), X-ray diffraction (XRD), and photoluminescence spectra (PL). XRD reveals that the prepared thin films possess a single crystalline hexagonal wurtzite crystal structure with preferential c-axis orientation. Under above-bandgap excitation at room temperature, PL shows that ZnO films exhibit strong UV near-band-edge excitonic emission and Eu-doped ZnO thin films present UV emission and red emission from Eu3+ ions, demonstrating efficient energy transfer from the host to Eu3+ ions. The influence of annealing on the structure and optical properties of ZnO and Eu-doped ZnO thin films is studied. The efficient energy transfer from the host to Eu3+ and high luminous efficiency indicates that the prepared Eu-doped ZnO thin films are very promising materials for lighting and flat panel display application.

Structural, Electrical and Optical Properties of Li-Doped ZnO Thin Films Influenced by Annealing Oxygen Pressure

2011 ◽  
Vol 299-300 ◽  
pp. 530-533
Author(s):  
Li Dan Tang ◽  
Bing Wang ◽  
Jian Zhong Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Surface Optical ◽  
Doped Zno

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm2/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×1017cm-3when annealing oxygen pressure is 1Pa.

PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.

Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition

2003 ◽  
Vol 435 (1-2) ◽  
pp. 49-55 ◽  
Author(s):  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jes Asmussen ◽  
RajK. Thareja
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Co Doping ◽  
Krf Excimer Laser ◽  
P Type

Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

2007 ◽  
Vol 253 (8) ◽  
pp. 3825-3827 ◽  
Author(s):  
Zhang Xiaodan ◽  
Fan Hongbing ◽  
Zhao Ying ◽  
Sun Jian ◽  
Wei Changchun ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Co Doping ◽  
P Type

Highly stable non-polar p-type Ag-doped ZnO thin films grown on r-cut sapphire

2013 ◽  
Vol 100 ◽  
pp. 78-81 ◽  
Author(s):  
M.A. Myers ◽  
J.H. Lee ◽  
H. Wang
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document