Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces

2002 ◽  
Vol 744 ◽  
Author(s):  
Yuri M. Strzhemechny ◽  
John Nemergut ◽  
Junjik Bae ◽  
David C. Look ◽  
Leonard J. Brillson
Keyword(s):  
Single Crystal ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Free Exciton ◽  
Chemical Vapor Transport ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Exciton Transition ◽  
Near Surface ◽  
Pl Spectra

ABSTRACTWe have studied the effects of hydrogen plasma treatment on the defect characteristics in single crystal ZnO grown at Eagle-Picher by chemical vapor transport. Depth-dependent cathodoluminescence (CL) spectra, temperature-dependent (9–300 K) and excitation intensity-dependent photoluminescence (PL) spectra reveal significant changes resulting from unannealed exposure of n-type ZnO to a remote hydrogen plasma. Low temperature PL spectra show that this hydrogen exposure effectively suppresses the free-exciton transition and redistributes intensities in the bound-exciton line set and two-electron satellites with their phonon replicas. The resultant spectra after hydrogenation exhibit a new peak feature at 3.366 eV possibly related to a neutral donor bound exciton. A simple thermal analysis of the activation energy for the 3.366 eV line yields 5–10 meV. Hydrogenation also produces a violet 100 meV-wide peak centered at 3.16 eV. Remote plasma hydrogenation produces similar changes in room-temperature CL spectra: near-band edge emission intensity increases with hydrogenation. Furthermore, this new emission increases with proximity to the free ZnO surfaces, i.e., with decreasing the energy of the incident electron beam from 3.0 down to 0.5 keV. Subsequent annealing at 450 °C completely restores both the PL and CL spectra in the sub-band gap range. The appearance of a new bound-exciton feature at 3.366 eV with H plasma exposure, the near-surface nature of the spectral changes, and the reversibility of spectral features with annealing indicate a direct link between H indiffusion and appearance of a shallow donor.

Photoluminescence of ZnO Nanocrystals Embedded in BaF2 Matrices by Magnetron Sputtering

2008 ◽  
Vol 8 (3) ◽  
pp. 1160-1164
Author(s):  
C. H. Zang ◽  
Y. C. Liu ◽  
R. Mu ◽  
D. X. Zhao ◽  
J. Y. Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Raman Scattering ◽  
Free Exciton ◽  
Wide Band ◽  
Zno Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Ultraviolet Emission ◽  
Pl Spectra ◽  
Zno Nanocrystals

This paper describes ZnO nanocrystals embedded in BaF2 matrices by the magnetron sputtering method in an attempt to use fluoride as a shell layer to embed ZnO nanocrystals core. BaF2 is a wide-band gap material, and can confine carriers in the ZnO films. As a result, the exciton emission intensity should be enhanced. The sample was annealed at 773 K, and X-ray diffraction (XRD) results showed that ZnO nanocrystals with wurtzite structure were embedded in BaF2 matrices. Raman-scattering spectra also confirmed the formation of ZnO nanoparticles. Abnormal longitudinal-optical (LO) phonon-dominant multiphonon Raman scattering was observed in the sample. Room-temperature photoluminescence (PL) spectra showed an ultraviolet emission peak at 374 nm. The origin of the ultraviolet emission is discussed here with the help of temperature-dependent PL spectra. The ultraviolet emission band was a mixture of free exciton and bound exciton recombination observed in the low temperature PL spectra (at 77 K). Abnormal temperature dependence of ultraviolet near-band-edge emission-integrated intensity of the sample was observed. The band tail state was observed in the absorption spectra, illustrating that the impurity-related defects were caused by the shell of the BaF2 grain layer. For comparison, ZnO films on BaF2 substrates were also fabricated by the magnetron sputtering method, and the same measurement methods were used.

Effect of hydrogen plasma treatment on the luminescence and photoconductive properties of ZnO nanowires

2009 ◽  
Vol 1206 ◽  
Author(s):  
Yanbo Li ◽  
Ryohei Uchino ◽  
Takero Tokizono ◽  
Alexander Paulsen ◽  
Miao Zhong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Vacancies ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Green Emission ◽  
Zno Nanowires ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Hydrogen Atoms ◽  
Edge Emission

AbstractZnO nanowires with strong green emission synthesized by chemical vapor deposition were treated using hydrogen plasma. The effect of hydrogen plasma treatment was studied by means of photoluminescence and photoconductivity. A strong passivation of the green emission and a significant enhancement of the near band edge emission were found after the hydrogen plasma treatment. The conductivity of the nanowires in dark was increased by more than 3 orders of magnitude. The photoconductivity also increased after the hydrogen plasma treatment. The observed changes in the luminescence and photoconductive properties of the ZnO nanowires were likely caused by hydrogen atoms occupying both oxygen vacancies and interstitial sites.

The enhancement of near-band-edge emission by hydrogen plasma treatment for Ga-doped ZnO, ZnO and ZnMgO films

2019 ◽  
Vol 92 ◽  
pp. 11-15 ◽  
Author(s):  
Xinhua Pan ◽  
Xiangyang Chen ◽  
Chenxiao Xu ◽  
Shanshan Chen ◽  
Yujia Zeng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Doped Zno

Synthesis of formamidinium lead iodide perovskite bulk single crystal and its optical properties

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744066 ◽  
Author(s):  
Hongge Zheng ◽  
Junjie Duan ◽  
Jun Dai
Keyword(s):  
Single Crystal ◽  
Orthorhombic Phase ◽  
Near Band Edge ◽  
Cubic Phase ◽  
Band Edge Emission ◽  
Bulk Single Crystal ◽  
Lead Iodide ◽  
Temperature Dependent ◽  
Recombination Mechanism ◽  
Pl Spectra

Formamidinium lead iodide (FAPbI3) is a promising hybrid perovskite material for optoelectronic devices. We synthesized bulk single crystal FAPbI3 by a rapid solution crystallization method. X-ray diffraction (XRD) was performed to characterize the crystal structure. Temperature-dependent photoluminescence (PL) spectra of the bulk single crystal FAPbI3 were measured from 10 to 300 K to explain PL recombination mechanism. It shows that near band edge emission blueshifts with the temperature increasing from 10 to 120 K and from 140 K to room temperature, a sudden emission band redshift demonstrates near 140 K because of the phase transition from orthorhombic phase to cubic phase. From the temperature-dependent PL spectra, the temperature coefficients of the bandgap and thermal activation energies of FAPbI3 perovskite are fitted.

scholarly journals Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

1999 ◽  
Vol 4 (S1) ◽  
pp. 310-315 ◽  
Author(s):  
R. Lantier ◽  
A. Rizzi ◽  
D. Guggi ◽  
H. Lüth ◽  
B. Neubauer ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Free Exciton ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Rocking Curve ◽  
A Value ◽  
Dislocations Density ◽  
Aln Buffer ◽  
Atomically Flat

The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550oC on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AlN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations.

Properties of Surface States on GaN and Related Compounds and Their Passivation by Dielectric Films

2002 ◽  
Vol 743 ◽  
Author(s):  
Hideki Hasegawa ◽  
Tamotsu Hashizume
Keyword(s):  
Plasma Treatment ◽  
Surface State ◽  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Surface States ◽  
Ex Situ ◽  
Near Surface ◽  
Ecr Plasma ◽  
Good Surface ◽  
Donor States

ABSTRACTThis paper reviews the authors′ recent efforts to clarify the properties of electronic states near surfaces of GaN and AlGaN by using variousin-situandex-situcharacterization techniques, including UHV contact-less C-V, photoluminescence surface state spectroscopy (PLS3), cathode luminescence in-depth spectroscopy (CLIS),and gateless FET techniques that have been developed by the authors’ group.As a result, a model including a U-shaped surface state continuum, having a particular charge neutrality level, combined with frequent appearance of near-surface N-vacancy related deep donor states having a discrete level at Ec - 0.37eV is proposed as a unified model that can explain large gate leakage currents and current collapse in AlGaN/GaN HFETs. Hydrogen plasma treatment and SiO2deposition increase N-vacancy related deep donors. Reasonably good surface passivation can be achieved by ECR-plasma SiNx films and by ECR-plasma oxidized Al2O3films both combined with ECR N2plasma treatment.

scholarly journals Study of Ultraviolet Emission Spectra in ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Y. M. Lu ◽  
X. P. Li ◽  
P. J. Cao ◽  
S. C. Su ◽  
F. Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Free Exciton ◽  
Emission Spectra ◽  
Low Energy ◽  
Zno Thin Films ◽  
Ultraviolet Emission ◽  
Exciton Transition ◽  
Pl Spectra ◽  
Uv Emission

Photoluminescence (PL) of ZnO thin films prepared on c-Al2O3substrates by pulsed laser deposition (PLD) are investigated. For all samples, roomtemperature (RT) spectra show a strong band-edge ultraviolet (UV) emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X) emission plays a major role in PL spectra, while the free exciton transition (FX) gradually dominates the spectrum with increasing temperatures. It notes that at low temperature an emission band (FA) appears in low energy side of D0X and FX and can survive up to RT. Further confirmation shows that the origin of the band FA can be attributed to the transitions of conduction band electrons to acceptors (e, A0), in which the acceptor binding energy is estimated to be approximately 121 meV. It is concluded that at room temperature UV emission originates from the corporate contributions of the free exciton and free electrons-to-acceptor transitions.

Deposition of Zinc Oxide Thin Films Using a Surface Reaction on Platinum Nanoparticles

2011 ◽  
Vol 1315 ◽  
Author(s):  
Kanji Yasui ◽  
Hitoshi Miura ◽  
Hiroshi Nishiyama
Keyword(s):  
Free Exciton ◽  
Exothermic Reaction ◽  
Chemical Vapor ◽  
Band Edge ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Neutral Donor ◽  
Pl Spectra

ABSTRACTA new chemical vapor deposition method for the growth of ZnO films using the reaction between dimethylzinc (DMZn) and thermally excited H2O produced by a Pt-catalyzed H2–O2 reaction was investigated. The thermally excited H2O molecules formed by the exothermic reaction of H2 and O2 on the catalyst were ejected from a fine nozzle into the reaction zone and allowed to collide with DMZn ejected from another fine nozzle. The ZnO films were grown directly on a-plane (11-20) sapphire substrates at substrate temperatures of 773-873 K with no buffer layer. X-ray diffraction patterns exhibited intense (0002) and (0004) peaks from the ZnO(0001) index plane. The smallest full width at half maximum (FWHM) value of the ω- rocking curve of ZnO(0002) was less than 0.1º. The largest Hall mobility and the smallest residual carrier concentration of the ZnO films were 169 cm2V−1s−1 and 1.7×1017 cm−3, respectively. Photoluminescence (PL) spectra at room temperature exhibited a band edge emission at 3.29 eV, with a FWHM of 104 meV. Green luminescence from deeper levels was generally about 1.5% of the band edge emission intensity. PL spectra at 5 K showed a strong emission peak at 3.3603 eV, attributed to the neutral donor-bound exciton Dºx. The FWHM was as low as 1.0 meV. Free exciton emissions also appeared at 3.3757 eV (FXA, n=1) and 3.4221 eV (FXA, n=2).

scholarly journals Nanocrystalline Oxides: CdS nanowires synthesized by solvothermal method

2014 ◽  
Vol 70 (a1) ◽  
pp. C1414-C1414
Author(s):  
Nomery Hadia ◽  
Santiago Garcia-Granda ◽  
Jose Garcia
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Research Programme ◽  
Building Blocks ◽  
Mediterranean Area ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
One Dimensional ◽  
Wide Range ◽  
Cds Nanowires

Recent advances in the field of nanotechnology produced an assortment of one-dimensional (1D) structures, such as nanowires and nanorods. These fascinating materials are the potential building blocks for a wide range of nanoscale electronics, optoelectronics, magnetoelectronics, or sensing devices [1]. Parallel to the success with group IV and groups III–V compounds semiconductor nanostructures, semiconducting metal oxide materials with wide band gaps are attracting attention [2-3]. The main aim of this communication is to report our results on the application of several new techniques, particularly the use of hydrothermal synthesis, to fabricate single crystal one-dimensional nanostructured materials, study their growth processes, understand the growth mechanisms and investigate their physical properties. A wide range of remarkable features are then presented, to cover a number of metal oxides, such as ZnO, Sb2O3, CdS, MgO, α-Fe2O3, or TiO2, describing their structures, optical, magnetic, mechanical and chemical sensing properties. These studies constitute the basis for developing versatile applications based on metal oxide 1D systems as well as highlighting the current progress in device development. To exemplify, the as-prepared CdS nanowires have average 28 nm in diameter and length up to several micrometres. The direct band gap of the CdS nanowires is 2.56 eV calculated by the UV-vis absorption spectra. The PL spectrum has two distinct emission bands at 502 nm and 695 nm, which are associated with the near-band-edge emission and defect emission, respectively. These synthesized single-crystal CdS nanowires have a high potential in the optoelectronic applications of nanolasers, solar cells, lighting-emitting diodes or photodetectors. Acknowledgments: Erasmus Mundus MEDASTAR (Mediterranean Area for Science, Technology and Research) Programme, 2011–4051/002–001-EMA2, Spanish MINECO (MAT2010-15094, Factoría de Cristalización – Consolider Ingenio 2010) and ERDF.

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