Mg Implantation and Characterization of Sapphire Surfaces

1986 ◽  
Vol 74 ◽  
Author(s):  
A. P. Jardine ◽  
S. Mitra Mukhopadhyay ◽  
J. M. Blakely
Keyword(s):  
Mass Transport ◽  
Decay Rate ◽  
Surface Segregation ◽  
Bulk Diffusion ◽  
Near Surface ◽  
Surface Mass ◽  
Surface Mass Transport ◽  
Crystal Wafer ◽  
Mg Doped

AbstractMg ion-implantation of A12O3 wafers followed by air annealing at high temperatures was investigated as a way to provide bulk doped samples for studies of Mg surface segregation and its effect on surface mass transport. SIMS was used to analyse Mg concentrations in implanted and unimplanted near-surface regions and in the bulk. It was found that the concentration of Mg decreases dramatically with depth from both surfaces of an annealed wafer and is also observed in the bulk. These observations are attributed to bulk diffusion of the Mg combined with equilibrium surface segregation. Surface mass transport associated with the (1120) surface of an A12 O3 single crystal wafer doped and equilibrated by such a method was studied by the grating decay method; the Mg doped sample showed a decay rate in air higher than that in the undoped wafer by a factor of ∼ 2.4 at 1500°C.

Fluctuations of Step Edges: Revelations About Atomic Processes Underlying Surface Mass Transport

1998 ◽  
Vol 528 ◽  
Author(s):  
T. L. Einstein ◽  
S. V. Khare ◽  
O. Pierre-Louis
Keyword(s):  
Mass Transport ◽  
A Priori ◽  
Single Layer ◽  
Atomic Processes ◽  
Vicinal Surfaces ◽  
Surface Mass ◽  
Kinetic Coefficients ◽  
Surface Mass Transport ◽  
Mass Transport Mechanisms

AbstractExperimental advances in recent years make possible quantitative observations of step-edge fluctuations. By applying a capillary-wave analysis to these fluctuations, one can extract characteristic times, from which one learns about the mass-transport mechanisms that underlie the motion as well as the associated kinetic coefficients [1-3]. The latter do not require a priori insight about the microscopic energy barriers and can be applied to situations away from equilibrium. We have studied a large number of limiting cases and, by means of a unified formalism, the crossover between many of these cases[4]. Monte Carlo simulations have been used to corroborate these ideas. We have considered both isolated steps and vicinal surfaces; illustrations will be drawn from noble-metal systems, though semiconductors have also been studied. Attachment asymmetries associated with Ehrlich-Schwoebel barriers play a role in this behavior. We have adapted the formalism for nearly straight steps to nearly circular steps in order to describe the Brownian motion of single-layer clusters of adatoms or vacancies on metal surfaces, again in concert with active experimental activity [3,5]. We are investigating the role of external influences, particularly electromigration, on the fluctuations.

Surface mass transport and island nucleation during growth of Ge on laser textured Si(001)

2002 ◽  
Vol 65 (12) ◽  
Author(s):  
T. Schwarz-Selinger ◽  
Y. L. Foo ◽  
David G. Cahill ◽  
J. E. Greene
Keyword(s):  
Mass Transport ◽  
Surface Mass ◽  
Island Nucleation ◽  
Surface Mass Transport

scholarly journals Thin-sheet modelling of lithospheric deformation and surface mass transport

2005 ◽  
Vol 407 (3-4) ◽  
pp. 239-255 ◽  
Author(s):  
Ivone Jiménez-Munt ◽  
Daniel Garcia-Castellanos ◽  
Manel Fernandez
Keyword(s):  
Mass Transport ◽  
Thin Sheet ◽  
Lithospheric Deformation ◽  
Surface Mass ◽  
Surface Mass Transport
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