On the Origin of Light Emission in GaNxP1-x

2002 ◽  
Vol 722 ◽  
Author(s):  
I. A. Buyanova ◽  
G. Yu. Rudko ◽  
W. M. Chen ◽  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Light Emission ◽  
Multiple Quantum Well ◽  
The Other ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Temperature Dependent ◽  
Quantum Well Structures ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence ◽  
Absorption Measurements

AbstractTemperature dependent photoluminescence (PL) and absorption measurements are employed to clarify mechanism for light emission in GaNP alloys with low (< 4.1) nitrogen content. The PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent red shift of the PL maximum position. On the other hand, band-to-band recombination in the alloy remains predominantly non-radiative presumably due to the presence of a large number of competing recombination channels.

scholarly journals Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
E. Kheirandish ◽  
N. A. Kouklin ◽  
J. Liang
Keyword(s):  
Light Emission ◽  
Electronic Devices ◽  
Emission Spectra ◽  
Temperature Dependent ◽  
Physical Mechanisms ◽  
Spectral Shifts ◽  
Nanopore Arrays ◽  
Bulk Gan ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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