Secondary Ion Mass Spectroscopy Study of Failure Mechanism in Organic Light Emitting Devices

2001 ◽  
Vol 710 ◽  
Author(s):  
Lin Ke ◽  
Keran Zhang ◽  
Ramadas Senthil Kumar ◽  
Soo Jin Chua ◽  
Nikolai Yakovlev
Keyword(s):  
Mass Spectroscopy ◽  
Initial Point ◽  
Interface Roughness ◽  
Dark Spot ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Defect Area ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy is used to examine the dark, non-emissive defects on the organic light-emitting device. Boundary movements are originated from electrode imperfection. Due to flexibility and movability of polymer layer, distribution variations and a more severe Indium and Calcium overlapping are detected in dark spot defect area. Boundary movements are not in good agreement between different layers. Interfaces became undulate. The closeness and proximity between the In sharp spikes and cathode metal protrusion leads to the initial point of dark spot. We demonstrate that the presence of cathode imperfection and interface roughness of different layers correlated to the device dark spot formation.

The Properties of a P-Implanted GaN Light-Emitting Diode

2002 ◽  
Vol 743 ◽  
Author(s):  
J. Kikawa ◽  
S. Yoshida ◽  
Y. Itoh
Keyword(s):  
Mass Spectroscopy ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Yellow Band ◽  
Blue Band ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Band Emission ◽  
Peak Energy ◽  
Secondary Ion

ABSTRACTElectroluminescence measurements of P-implanted GaN light-emitting diodes were performed. The measured peak densities of P in the GaN were 5×10 cm−3 and 4×10 cm−3 based on secondary ion mass spectroscopy. The EL spectra had a broad blue-band emission at the peak energy from around 2.8 eV to 3.3 eV and yellow-band emission at an energy centered at 2.2 eV. The blue-band emission could decompose into two components at energy positions of 2.9 eV and 3.2 eV. The former component is considered to be emission due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN.

ToF-SIMS, Time-of-Flight Secondary Ion Mass Spectroscopy for Counterfeit Detection of Electrical, Electronic, and Electromechanical (EEE) Parts

2019 ◽  
Author(s):  
M. Simard-Normandin ◽  
C. Banks ◽  
N. Havercroft ◽  
P. Clark ◽  
E. Tallarek
Keyword(s):  
Mass Spectroscopy ◽  
Light Emitting Diode ◽  
Semiconductor Devices ◽  
Time Of Flight ◽  
Epitaxial Layers ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Led Light ◽  
Tof Sims ◽  
Secondary Ion

Abstract This presentation demonstrates how Time-of-Flight Secondary Ion Mass Spectroscopy provides unique information to identify suspect counterfeit semiconductor devices. An example is shown where the epitaxial layers of a light emitting device (LED) do not match those of the exemplar. Keywords: Secondary Ion Mass Spectroscopy, SIMS, counterfeit detection, LED, Light emitting diode.

Mechanism of dark-spot degradation of organic light-emitting devices

2005 ◽  
Vol 86 (4) ◽  
pp. 041105 ◽  
Author(s):  
P. Melpignano ◽  
A. Baron-Toaldo ◽  
V. Biondo ◽  
S. Priante ◽  
R. Zamboni ◽  
...  
Keyword(s):  
Dark Spot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices
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