Regrowth of Implanted–Amorphous Si
Keyword(s):
AbstractA two dimensional model of nucleation and growth is described which is consistent with the following experimental phenomena observed in the regrowth of ion-implanted silicon: (1) Substrate orientation effect on regrowth kinetics. (2) Impurity effects on regrowth kinetics. (3) The activation energy dependence of regrowth rate. (4) Impurity redistribution and supersaturation effect.
2002 ◽
Vol 61
(1)
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pp. 34-44
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2020 ◽
Vol 34
(4)
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pp. 05020003
2001 ◽
Vol 55
(8)
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pp. 14
Keyword(s):
1969 ◽
Vol 18
(189)
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pp. 489-493