Intermixing of Chromium and Copper by Argon Ion Recoil Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
N. Baron ◽  
J. Greggi ◽  
J Schreurs
Keyword(s):  
Thin Film ◽  
Solid Solutions ◽  
Qualitative Agreement ◽  
Copper Content ◽  
Copper Matrix ◽  
Concentration Profiles ◽  
X Ray ◽  
Radiation Induced ◽  
Argon Ions ◽  
Argon Ion

ABSTRACTArgon ions at 150 keV and fluences ranging from 5 × 1015 to 4.8 × 1017 ions/cm2 were used to bombard 60 nm chromium layers deposited on copper. The resulting concentration profiles were determined by AES and thin film microstructural analyses were performed using an STEM equipped with an energy dispersive X-ray spectrometer (EDS). The concentration profiles are in qualitative agreement with the theory of radiation induced mixing. At fluences up to 2.4 × 1017 Ar+/cm2, metastable solid solutions of increasing copper content in BCC chromium are formed. At the highest fluence (4.8 × 1017 Ar+/cm2 ), chromium rich precipitates form in the copper matrix.

A Novel Example of X-Ray-Radiation-Induced Chemical Reduction of an Aromatic Nitro-Group-Containing Thin Film on SiO2 to an Aromatic Amine Film

ChemPhysChem ◽  
2003 ◽  
Vol 4 (8) ◽  
pp. 884-889 ◽  
Author(s):  
Paula Mendes ◽  
Maura Belloni ◽  
Mark Ashworth ◽  
Chris Hardy ◽  
Kirill Nikitin ◽  
...  
Keyword(s):  
Thin Film ◽  
Nitro Group ◽  
Aromatic Amine ◽  
Chemical Reduction ◽  
X Ray ◽  
Radiation Induced ◽  
Aromatic Nitro

scholarly journals Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2941
Author(s):  
Amir Hoshang Ramezani ◽  
Siamak Hoseinzadeh ◽  
Zhaleh Ebrahiminejad ◽  
Milad Sangashekan ◽  
Saim Memon
Keyword(s):  
Thin Film ◽  
Film Surface ◽  
Sem Analysis ◽  
Energy Dispersive ◽  
Height Distribution ◽  
Correlation Lengths ◽  
X Ray ◽  
Thin Film Surface ◽  
Before And After ◽  
Argon Ion

In the present study, the microstructural and statistical properties of unimplanted in comparison to argon ion-implanted tantalum-based thin film surface structures are investigated for potential application in microelectronic thin film substrates. In the study, the argon ions were implanted at the energy of 30 keV and the doses of 1×1017, 3×1017, and 7×1017 (ion/cm2) at an ambient temperature. Two primary goals have been pursued in this study. First, by using atomic force microscopy (AFM) analysis, the roughness of samples, before and after implantation, has been studied. The corrosion apparatus wear has been used to compare resistance against tantalum corrosion for all samples. The results show an increase in resistance against tantalum corrosion after the argon ion implantation process. After the corrosion test, scanning electron microscopy (SEM) analysis was applied to study the sample morphology. The elemental composition of the samples was characterized by using energy-dispersive X-ray (EDX) analysis. Second, the statisticalcharacteristics of both unimplanted and implanted samples, using the monofractal analysis with correlation function and correlation length of samples, were studied. The results show, however, that all samples are correlated and that the variation of ion doses has a negligible impact on the values of correlation lengths. Moreover, the study of height distribution and higher-order moments show the deviation from Gaussian distribution. The calculations of the roughness exponent and fractal dimension indicates that the implanted samples are the self-affine fractal surfaces.

The Microstructure of Steatite (Protoenstatite)

1985 ◽  
Vol 43 ◽  
pp. 236-237
Author(s):  
W. E. Lee ◽  
A. H. Heuer
Keyword(s):  
High Frequency ◽  
Glass Ceramics ◽  
Magnesium Silicate ◽  
Beam Current ◽  
Glassy Matrix ◽  
Angle Of Incidence ◽  
X Ray ◽  
Mechanical And Electrical Properties ◽  
Argon Ions ◽  
High Temperature Polymorph

IntroductionTraditional steatite ceramics, made by firing (vitrifying) hydrous magnesium silicate, have long been used as insulators for high frequency applications due to their excellent mechanical and electrical properties. Early x-ray and optical analysis of steatites showed that they were composed largely of protoenstatite (MgSiO3) in a glassy matrix. Recent studies of enstatite-containing glass ceramics have revived interest in the polymorphism of enstatite. Three polymorphs exist, two with orthorhombic and one with monoclinic symmetry (ortho, proto and clino enstatite, respectively). Steatite ceramics are of particular interest a they contain the normally unstable high-temperature polymorph, protoenstatite.Experimental3mm diameter discs cut from steatite rods (∼10” long and 0.5” dia.) were ground, polished, dimpled, and ion-thinned to electron transparency using 6KV Argon ions at a beam current of 1 x 10-3 A and a 12° angle of incidence. The discs were coated with carbon prior to TEM examination to minimize charging effects.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Problems in Thin-Film X-ray Quantification

1990 ◽  
Vol 48 (2) ◽  
pp. 458-459
Author(s):  
J N Chapman ◽  
W A P Nicholson
Keyword(s):  
Thin Film ◽  
Specimen Thickness ◽  
X Rays ◽  
Characteristic Peak ◽  
Local Composition ◽  
X Ray ◽  
Measured Ratio ◽  
Path Lengths ◽  
Composition Changes

Energy dispersive x-ray microanalysis (EDX) is widely used for the quantitative determination of local composition in thin film specimens. Extraction of quantitative data is usually accomplished by relating the ratio of the number of atoms of two species A and B in the volume excited by the electron beam (nA/nB) to the corresponding ratio of detected characteristic photons (NA/NB) through the use of a k-factor. This leads to an expression of the form nA/nB = kAB NA/NB where kAB is a measure of the relative efficiency with which x-rays are generated and detected from the two species.Errors in thin film x-ray quantification can arise from uncertainties in both NA/NB and kAB. In addition to the inevitable statistical errors, particularly severe problems arise in accurately determining the former if (i) mass loss occurs during spectrum acquisition so that the composition changes as irradiation proceeds, (ii) the characteristic peak from one of the minority components of interest is overlapped by the much larger peak from a majority component, (iii) the measured ratio varies significantly with specimen thickness as a result of electron channeling, or (iv) varying absorption corrections are required due to photons generated at different points having to traverse different path lengths through specimens of irregular and unknown topography on their way to the detector.

Electron diffraction detection of ordliking in annealed PbTe thin film

1990 ◽  
Vol 48 (4) ◽  
pp. 1018-1019
Author(s):  
Karimat El-Sayed
Keyword(s):  
Thin Film ◽  
Electron Diffraction ◽  
Lead Telluride ◽  
Structural Basis ◽  
Face Centered Cubic ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Stage Process ◽  
Diffraction Patterns ◽  
Face Centered

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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