Pulsed Beams and Ion-Beam Mixing: Metal-Si and Metalmetal Structures
Keyword(s):
Ion Beam
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ABSTRACTEnergy deposition and heat-flow determine the temperature distributions in pulsed-beam irradiated structures. In laser irradiated Si, transient conductance measurements indicated a liquid/solid interface velocity of 2.8 m/sec during crystallization in agreement with a heat flow model. With pulsed ionbeam annealing of metal-Si structures, melting starts at the interface; epitaxial NiSi2 layers have been formed. Ion-beammixing experiments on polycrystalline and epitaxial Au-Ag bilayers show that intermixing is more pronounced in the polycrystalline structures as is the case with thermal annealing. Superlattice structures are formed in the epitaxial structures.
Keyword(s):
1981 ◽
Vol 51
(2)
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pp. 327-334
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Keyword(s):
1986 ◽
Vol 2
(2)
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pp. 157-170
Keyword(s):
1995 ◽
Vol 106
(1-4)
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pp. 65-67
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