Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy

2001 ◽  
Vol 696 ◽  
Author(s):  
A.R. Woll ◽  
P. Moran ◽  
E.M. Rehder ◽  
B. Yang ◽  
T.F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Surface Cleaning ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
Energy Electron ◽  
High Temperature Annealing ◽  
Low Energy Electron ◽  
Dislocation Multiplication

AbstractWe demonstrate the use of low-energy electron microscopy (LEEM) as a tool for studying dis-location formation in low-Ge-content SiGe films on Si(001) and silicon-on-insulator. Compared to TEM, sample preparation for LEEM consists only of conventional surface cleaning. Yet, because of its sensitivity to local variations in surface strain on Si(001), LEEM can detect dislocations at the earliest stages of strain relaxation. In identically prepared SiGe films, the typical dislocation extends over the entire viewable region of several hundred microns in SiGe/Si, but is less than 100 microns in SiGe/SOI. In addition, dislocation cross-slip and threading segments are common in SiGe/SOI, but virtually non-existent in SiGe/Si. We have also observed dislocation formation in real-time during high temperature annealing. Preliminary results appear to demonstrate dislocation multiplication and blocking at a perpendicular glide plane. The applicability of LEEM to strain relaxation in other Si-based systems will be discussed.

Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator

1999 ◽  
Vol 570 ◽  
Author(s):  
P. Sutter ◽  
M.G. Lagally
Keyword(s):  
Electron Microscopy ◽  
Strain Field ◽  
Uniaxial Strain ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
Extended Defects ◽  
Novel Technique ◽  
Low Energy Electron ◽  
Induced Changes

ABSTRACTWe demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60° dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.

A New Low Energy Electron Microscope

1998 ◽  
Vol 05 (06) ◽  
pp. 1189-1197 ◽  
Author(s):  
R. M. Tromp ◽  
M. Mankos ◽  
M. C. Reuter ◽  
A. W. Ellis ◽  
M. Copel
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Electron Microscope ◽  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Low Energy ◽  
Energy Electron ◽  
Relaxation Phenomena ◽  
Low Energy Electron

Low energy electron microscopy (LEEM) has developed into one of the premier techniques for in situ studies of surface dynamical processes, such as epitaxial growth, phase transitions, chemisorption and strain relaxation phenomena. Over the last three years we have designed and constructed a new LEEM instrument, aimed at improved resolution, improved diffraction capabilities and greater ease of operation compared to present instruments.

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