Effect of Sulfur Surface Structure on Nucleation of Oxide Seed Layers on Textured Metals for Coated Conductor Applications

2001 ◽  
Vol 689 ◽  
Author(s):  
C. Cantoni ◽  
D. K. Christen ◽  
A. Goyal ◽  
L. Heatherly ◽  
G. W. Ownby ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Seed Layer ◽  
Auger Electron ◽  
High Energy ◽  
Coated Conductor ◽  
High Energy Electron ◽  
Bulk Metal ◽  
Biaxial Texture ◽  
Seed Layers

ABSTRACTWe present a study of the {100}<100> biaxially textured Ni (001) surface and oxide seed layer nucleation by in situ reflection high-energy electron diffraction and Auger electron spectroscopy. Our observations revealed the existence of a c(2×2) superstructure on the textured Ni surface due to segregation of sulfur contained in the bulk metal. The sulfur superstructure promotes the epitaxial (002) nucleation of seed layers such as Y2O3-stabilized ZrO2 (YSZ) and CeO2 on the metal and optimizes the biaxial texture necessary for high Jc superconductors on RABiTS.

A RHEED study of Cu3Au (110) surface

1992 ◽  
Vol 50 (2) ◽  
pp. 1460-1461
Author(s):  
Yi Huang ◽  
John M. Cowley
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
High Energy ◽  
High Energy Electron ◽  
Ion Scattering ◽  
Long Period ◽  
The Ideal

In recent years the Cu3Au (110) surface has been studied by many authors to reveal its ordering structure and order-disorder transition phenomena. A 2×1 structure which corresponds to an ideal truncation of the ordered bulk crystal and a 4×1 reconstructed structure have been observed. Using ion scattering methods, McRae et al have determined the Au fractions in the first and the second layer at room temperature, which deviate from the ideal bulk value and indicate the segregation of Au to the surface. But the question how the atoms are rearranged in the 4×1 structure and why some of the Au stays in the second layer have not been answered. Another important question about Cu3Au (110) surface is whether the long period ordering structure (LPS) exists on the surface. In present work the Cu3Au (precise composition Cu71.7Au28.3) (110) surface is studied with Auger electron Spectroscopy (AES) and Reflection High Energy Electron Diffraction (RHEED) which have not been used to study the Cu3Au surface before.

Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources

1999 ◽  
Vol 595 ◽  
Author(s):  
A.J. Ptak ◽  
K.S. Ziemer ◽  
L.J. Holbert ◽  
C.D. Stinespring ◽  
T.H. Myers
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Energy ◽  
Nitrogen Plasma ◽  
Rf Plasma ◽  
Cubic Phase ◽  
High Energy Electron ◽  
Spectroscopy Analysis ◽  
Auger Electron Spectroscopy Analysis ◽  
Plasma Sources

AbstractEvidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al1−xBxN would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.

Deposition of Gallium Nitride Films using Ammonia and Triethylgallium Seeded Helium Beams

1995 ◽  
Vol 395 ◽  
Author(s):  
J. J. Sumakeris ◽  
R. K. Chilukuri ◽  
R. F. Davis ◽  
H. H. Lamb
Keyword(s):  
Gallium Nitride ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Deposition Process ◽  
High Energy ◽  
High Energy Electron ◽  
Gas Streams ◽  
Helium Gas ◽  
Scanning Electron ◽  
Deposition Conditions

ABSTRACTGallium nitride films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and ammonia seeded into highly expanded helium gas streams. A two step deposition process that reproducibly results in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by scanning electron microscopy, reflection high energy electron diffraction and Auger electron spectroscopy and film character was correlated to deposition conditions.

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