The Characterization of Initial Growth of Polycrystalline Silicon Germanium Films on Zirconium Oxide

2001 ◽  
Vol 686 ◽  
Author(s):  
Dong-Won Kim ◽  
Freek Prins ◽  
Kil-Soo Ko ◽  
C. H. Lee ◽  
Dim-Lee Kwong ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Silicon Germanium ◽  
Interface Reaction ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Growth Characteristics ◽  
Initial Growth ◽  
Temperature Range ◽  
Transmission Electron

AbstractIn this study, the initial growth characteristics of a SiGe film realized by ultrahigh-vacuum chemical vapor deposition (UHV CVD) using GeH4 and Si2H6 on high-K gate oxide, ZrO2, has been investigated in the temperature range from 475°C to 550°C. The influence of surface reactions on growth characteristics such as the incubation of growth, roughness of the SiGe layer, and the interface reaction of the SiGe film with ZrO2were studied using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). From our analysis we conclude that ZrO2 reacts with Si and forms zirconium silicide in the temperature range between 500°C and 550°C. The surface roughness of amorphous SiGe layers increase from 0.5nm to 1.5nm by increasing Ge content from 0.1 to 0.3. A further increase of surface roughness is observed from less than 1nm to 5nm as SiGe layer transitions from an amorphous to a poly crystalline layer.

Control of Morphology and Growth Direction of Gallium Nitride Nanostructures

2003 ◽  
Vol 789 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Large Scale ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Oxide Mixture ◽  
Temperature Range ◽  
Transmission Electron

ABSTRACTVarious shaped single-crystalline gallium nitride (GaN) nanostructures were produced by chemical vapor deposition method in the temperature range of 900–1200 °C. Scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray diffraction, electron energy loss spectroscopy, Raman spectroscopy, and photoluminescence were used to investigate the structural and optical properties of the GaN nanostructures. We controlled the GaN nanostructures by the catalyst and temperature. The cylindrical and triangular shaped nanowires were synthesized using iron and gold nanoparticles as catalysts, respectively, in the temperature range of 900 – 1000 °C. We synthesized the nanobelts, nanosaws, and porous nanowires using gallium source/ boron oxide mixture. When the temperature of source was 1100 °C, the nanobelts having a triangle tip were grown. At the temperature higher up to 1200 °C the nanosaws and porous nanowires were formed with a large scale. The cylindrical nanowires have random growth direction, while the triangular nanowires have uniform growth direction [010]. The growth direction of the nanobelts is perpendicular to the [010]. Interestingly, the nanosaws and porous nanowires exhibit the same growth direction [011]. The shift of Raman, XRD, and PL bands from those of bulk was correlated with the strains of the GaN nanostructures.

Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by Mocvd

1999 ◽  
Vol 596 ◽  
Author(s):  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda ◽  
S Ohtani
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Growth Stage ◽  
Domain Walls ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Continuous Film ◽  
Cross Sectional ◽  
Initial Growth Stage ◽  
Transmission Electron

AbstractDomain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.

Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures

1991 ◽  
Vol 220 ◽  
Author(s):  
P. D. Agnello ◽  
T. O. Sedgwick ◽  
M. S. Goorsky ◽  
J. Ott ◽  
T. S. Kuan ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Significant Feature ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Silicon Growth ◽  
Silicon Germanium Alloys

ABSTRACTDichlorosilanc and germane were used to grow silicon-germanium alloys at temperatures as low as 550°C at atmospheric pressure. Germanium mole fractions as high as 44% were obtained and the layers exhibit smooth surface morphology. Silicon-gcrmanium/silicon multilayers with abrupt hctero-intcrfaccs have been achieved. Cross Section Transmission Electron Microscopy, (XTEM) and High Resolution X-Ray Diffraction, (HRXRD) characterization of the hetero-interface abruptness will be presented. Recent results on two-dimensional (2-D) hole mobility structures grown by this technique will also be reported. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidcwall, which has been commonly observed in high temperature silicon growth.

scholarly journals Deposition Mechanism and Thickness Control of CVD SiC Coatings on NextelTM440 Fibers

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Yi Wang ◽  
Jian Sun ◽  
Bing Sheng ◽  
Haifeng Cheng
Keyword(s):  
Coating Thickness ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Deposition Mechanism ◽  
Thickness Control ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Coatings

SiC coatings were successfully synthesized on NextelTM440 fibers by chemical vapor deposition (CVD) using methyltrichlorosilane as the original SiC source at 1373 K. After deposited, the fibers were fully surrounded by uniform coatings with some bulges. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) results indicated that the coatings were composed of β-SiC and free carbon. Moreover, thickness control of the coatings could be carried out by adjusting the deposition time. The coating thickness rose exponentially, and the exterior of the coatings became looser as the deposition time increased. The thickness of about 1.5 µm was obtained after depositing for 4 h. The coating thickness was also theoretically calculated, and the result agreed well with the measured thickness. Finally, the related deposition mechanism is discussed and a deposition model is built.

Low Pressure CVD Growth of AlxTi1-xN Films with Tetrakis- (Dimethylamido)Titanium (Tdmat) and Dimethyl Aluminum Hydride (DMAH) Precursors

1997 ◽  
Vol 495 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
J. G. Ekerdt ◽  
N. M. Russell ◽  
M. D. Healy ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Aluminum Hydride ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Lower Growth ◽  
Al Content ◽  
Partial Pressures ◽  
Cvd Growth ◽  
C And N

ABSTRACTAlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. AlTiN film growth was observed on SiO2/Si(100) with substrate temperatures between 200 and 400 °C. The Al content in the film is controlled by the ratio of partial pressures of the two precursors in the gas phase. The metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. The chemical states of Ti, C, and N in AlxTi1-xN and titanium-carbo-nitride (TiCN) films are identical, while the Al chemical state is nitride at low, but increasingly carbidic at high Al concentration. The initial growth rate on SiO2 was significantly suppressed by the presence of DMAH. At lower growth temperatures, the DMAH effect is more severe. Good step coverage was observed for AlxTi1-xN on 0.3 μm vias with a 3:1 aspect ratio.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

Ta2O5-Incorporated WO3 Nanocomposite Film for Improved Electrochromic Performance in an Acidic Condition

2006 ◽  
Vol 6 (11) ◽  
pp. 3572-3576 ◽  
Author(s):  
Hee-Sang Shim ◽  
Hyo-Jin Ahn ◽  
Youn-Su Kim ◽  
Yung-Eun Sung ◽  
Won Bae Kim
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Potential Cycling ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Continuous Potential ◽  
Chemical States ◽  
The Stability

We report electrochromic and electrochemical properties of a WO3-Ta2O5 nanocomposite electrode that was fabricated from co-sputtering. Transmission electron microscopy (TEM)images of the WO3-Ta2O5 nanocomposite electrode revealed that morphology of the WO3 film was changed by incorporation of Ta2O5 nanoparticles, and their chemical states were confirmed to be W6+ and Ta5+ oxides from X-ray photoelectron spectroscopy (XPS). The introduction of Ta2O5 to the WO3 film played a role in alleviating surface roughness increase during continuous potential cycling; whereas the surface roughness of the WO3 film was increased from ca. 3.0 nm to ca. 13.4 nm after 400 cycles, the roughness increase on the WO3-Ta2O5 was significantly reduced to 4.2 nm after 400 cycles, as investigated by atomic force microscopy (AFM). This improvement of the stability by adding Ta2O5 may be responsible for the enhanced electrochemical and optical properties over long-term cycling with the WO3-Ta2O5 nanocomposite electrode.

Study of Thermal Oxide Solid-State Reaction on GaAs Surfaces

1991 ◽  
Vol 238 ◽  
Author(s):  
Z. Lu ◽  
D. Chen ◽  
R. M. Osgood ◽  
D. V. Podlesnik
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Photoelectron Spectroscopy ◽  
Interface Reaction ◽  
Decomposition Reaction ◽  
Thermal Reaction ◽  
Native Oxide ◽  
X Ray ◽  
Temperature Range ◽  
Thermal Oxide

ABSTRACTIn this paper, we will present a study of the thermal reaction of AsjOs with GaAs at temperatures below 550°C using monochromatic X-ray photoelectron spectroscopy (MXPS). A solid-state interface reaction of 4GaAs + 3AS2O5 → 2Ga2O3 + 3AS2O3 + 4As, which includes the usual native oxide thermal reaction: 2GaAs + AS2O3 → Ga2O3 + 4As, as well as a decomposition reaction AS2O5 → AS2O3 + O2 is responsible for the thermal reaction in this temperature range.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

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