Structural and Electrical Characterisation of Nickel Silicides Contacts on Silicon Carbide

2001 ◽  
Vol 680 ◽  
Author(s):  
F. La Via ◽  
F. Roccaforte ◽  
V. Raineri ◽  
P. Musumeci ◽  
L. Calcagno
Keyword(s):  
Silicon Carbide ◽  
Barrier Height ◽  
Rutherford Backscattering Spectrometry ◽  
Schottky Diodes ◽  
Nickel Silicide ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Nickel Thin Films ◽  
Transmission Electron

ABSTRACTThe interfacial reaction and phase formation as a function of the annealing temperature (600÷1000°C) and times were investigated on nickel thin films evaporated on n type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford Backscattering Spectrometry, X-Ray Diffraction, Transmission Electron Microscopy and sheet resistance measurements. Also several TLM structures and Schottky diodes were fabricated with the same processes and a correlation has been found between the annealing process and the electrical measurements. The only nickel silicide phase that has been observed between 600 and 950 °C was the Ni2Si. The carbon of the consumed silicon carbide layer has been dissolved in the silicide film, during the reaction, forming carbon precipitates. The Ni2Si/SiC Schottky diodes show an almost ideal characteristics (n=1.07) and a barrier height of about 1.3 eV. From the electrical characterisation a non uniform Schottky barrier height seems to be formed.

Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
F. La Via ◽  
S. Lombardo ◽  
V. Raineri ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Process Conditions ◽  
High Dose ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Secondary Defect ◽  
20 Nm

AbstractThe secondary defect annihilation by one- and two-step titanium silicidation in SiGe layers, formed by high dose Ge implantation, has been studied systematically as a function of the Ge fluence, implantation energy, silicide thickness, and silicide process conditions. In all cases the Ti thickness was kept below 20 nm, resulting in very thin Ti silicide layers typically less than 40 nm. The silicide phase was inspected by x-ray diffraction and transmission electron diffraction. Channelling Rutherford backscattering spectrometry and transmission electron microscopy were used to follow the end of range dislocation loop annihilation as a function of the silicide process conditions. The end of range loop annealing and the influence of silicidation is presented in this paper for Ge fluences above 3×1015 cm−2 and energies ranging from 70 keV to 140 keV. A model based on loop coarsening is presented which describes the observed loop annihilation behaviour.

scholarly journals Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

2016 ◽  
Vol 7 ◽  
pp. 1492-1500 ◽  
Author(s):  
Ionel Stavarache ◽  
Valentin Adrian Maraloiu ◽  
Petronela Prepelita ◽  
Gheorghe Iordache
Keyword(s):  
Optical Properties ◽  
Response Time ◽  
Spectral Width ◽  
Fast Response ◽  
Superior Performance ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Preparation Conditions ◽  
Photoelectric Properties ◽  
Transmission Electron

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

Microstructural evolution of dense and porous pyroelectric Pb1−xCaxTiO3 thin films

1999 ◽  
Vol 14 (5) ◽  
pp. 2012-2022 ◽  
Author(s):  
Andreas Seifert ◽  
Laurent Sagalowicz ◽  
Paul Muralt ◽  
Nava Setter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Microstructural Evolution ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Porous Films ◽  
Transmission Electron ◽  
Ca Substitution ◽  
High Figure ◽  
Low Permittivity

Pb1−xCaxTiO3 thin films with x = 0−0.3 for pyroelectric applications were deposited on platinized silicon wafers by chemical solution processing. Ca-substitution for Pb in PbTiO3 results in a reduced c/a ratio of the unit cell, which, in turn, leads to better pyroelectric properties. Control of nucleation and growth during rapid thermal annealing to 650 °C allowed the formation of either highly porous or dense (111) oriented films. The inclusion of pores creates a matrix-void composite with the low permittivity desired for pyroelectric applications, resulting in a high figure of merit. The growth mechanisms for the microstructural evolution of both dense and porous films were analyzed by x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectrometry and allowed establishment of microstructure/property relationships.

Growth of epitaxial ZnO films on Si(111)

2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Growth Direction ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

Microstructural Characterization of Pt/Ti and RuO2 Electrodes on SiO2/Si Annealed in the Oxygen Ambient

1996 ◽  
Vol 433 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun JA Kwon ◽  
Young Woo Jeong ◽  
Hyun HA Kim ◽  
Kyu HO Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Film Surface ◽  
Microstructural Characterization ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Degree Of Oxidation ◽  
Thin Interlayer ◽  
Increasing Temperature

AbstractMicrostructures and interdiffusions of Pt/Ti/SiO2/Si and RuO2/SiO2/Si during annealing in O2 were investigated using x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The degree of oxidation and the interdiffusion of elements have remarkably increased with increasing temperature above 500 °C for the Pt/Ti/SiO2/Si case. The generation of Pt hillocks commenced at 500 °C. The Pt-silicide phase was also observed near the TiOx/SiO2 interface. The microstructural variations occurred to only a small amount for the RuO2/SiO2/Si case over the temperature range 300 – 700 °C. While there was no hillock formation, the RuO2 film surface was roughened by the thermal grooving phenomenon. A thin interlayer phase was found at the RuO2/SiO2 interface.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Dependence of the Product's Phase Composition on the Ratio of Precursors in Plasmadynamic Synthesis of Silicon Carbide

2018 ◽  
Vol 769 ◽  
pp. 114-119 ◽  
Author(s):  
Artur A. Sivkov ◽  
Artur Nassyrbayev ◽  
Maksim Gukov
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
Central Electrode ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Accelerator Channel ◽  
Coaxial Magnetoplasma Accelerator

In this work, the powder of nanoscale cubic SiC was obtained by the plasmodynamic synthesis in a coaxial magnetoplasma accelerator (CMPA) with a graphite central electrode and an accelerator channel. The synthesis method allows obtaining a product with a high content of nanoscale cubic silicon carbide. The work is aimed to study the influence of the precursor’s ratio on the product. The synthesized products were analyzed by X-ray diffraction and transmission electron microscopy.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

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