Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition

2001 ◽  
Vol 680 ◽  
Author(s):  
U. Forsberg ◽  
A. Henry ◽  
Ö. Danielsson ◽  
M.K. Linnarsson ◽  
E. Janzén
Keyword(s):  
Growth Rate ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Cold Wall ◽  
Nitrogen Incorporation

ABSTRACTWe have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.

Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition

2000 ◽  
Vol 637 ◽  
Author(s):  
U. Forsberg ◽  
A. Henry ◽  
Ö. Danielsson ◽  
M.K. Linnarsson ◽  
E. Janzén
Keyword(s):  
Growth Rate ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Cold Wall ◽  
Nitrogen Incorporation

AbstractWe have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Controlling reaction paths for ultra-fast growth of inorganic nanowires floating in the gas phase

Nanoscale ◽  
2021 ◽  
Author(s):  
Richard S. Schäufele ◽  
Miguel Vazquez-Pufleau ◽  
Afshin Pendashteh ◽  
Juan J. Vilatela
Keyword(s):  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Selective Growth ◽  
Fast Growth ◽  
Reaction Paths ◽  
Inorganic Nanowires

Identification and understanding of selective growth parameters of 1D nanomaterials by floating catalysts chemical vapour deposition.

scholarly journals Growth Rate of TiN Films by Chemical-Vapour-Deposition

1994 ◽  
Vol 58 (4) ◽  
pp. 442-447 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Kazuyuki Higashino ◽  
Atsushi Kikuchi
Keyword(s):  
Growth Rate ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Tin Films
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