In Situ Etching Rate Measurement of Si with XeF2

1986 ◽  
Vol 68 ◽  
Author(s):  
K. R. Padmanabhan ◽  
S. Bhowmick ◽  
R. Shaver ◽  
Zhang Zu Hua ◽  
J. C. Buchholz
Keyword(s):  
Single Crystal ◽  
Etching Rate ◽  
Experimental Results ◽  
Rate Measurement ◽  
Random Orientation ◽  
Appreciable Difference ◽  
Induced Decomposition ◽  
Ion Backscattering

AbstractIon backscattering and channeling techniques have been employed to measure the etching rate of amorphous and single crystal Si by XeF2 under similar conditions.Both (100) Si on sapphire and (111) Si on spinel showed higher etching rates compared to amorphous Si.However, measurements of the etching rate using a Si cell aligned to the axis and along the planes under similar conditions did not show appreciable difference in the etching rate compared to the etching rate with random orientation of the cell.Presence of the analyzing 4He+ beam during etching enhances the etching rate to twice the value when compared to post etching analysis with the same beam.The enhancement of the etching rate due to ion induced decomposition of XeF2 have been considered in the explanation of the experimental results.

scholarly journals The production of polarized X-rays

1936 ◽  
Vol 156 (887) ◽  
pp. 96-107 ◽  
Keyword(s):  
Single Crystal ◽  
Experimental Results ◽  
Electric Vector ◽  
Theoretical Studies ◽  
X Rays ◽  
Random Orientation ◽  
Polarized Beams ◽  
Polarized Beam ◽  
Actual Use ◽  
Equal Amplitude

In theoretical studies of the interaction of X-rays and matter it is often necessary or convenient to deal first with a plane polarized beam of X-rays. In the laboratory such theoretical conditions cannot often be realized solely because of the extreme weakness of any beam of polarized X-rays normally available. It would appear, however, that some facts can be established only by actual use of polarized X-rays. For example, in order to establish that X-rays are scattered as if atoms were spherically symmetrical wholes, it would appear necessary to control both the direction of the electric vector, by using polarized X-rays, and the orientation of the atoms, by using a single crystal. The use of either a single crystal and ordinary X-rays with random orientation of the electric vector or the use of polarized X-rays with a crystal powder and random orientation of the crystals would appear to simulate the conditions of spherically symmetrical scattering. The technical difficulties of working with polarized X-rays are in all experiments very great. Inference as distinct from actual experiment is however an invalid method of establishing physical facts. In theoretical treatments of scattering of X-rays by crystals it is possible to derive results agreeing with those of experiments with unpolarized X-rays, by using postulates involving polarized X-rays. For example, an unpolarized beam can be treated as two polarized beams of equal amplitude, polarized one in the plane of incidence and one normal to it. The results are then recombined at the end. This purely mathematical device gives no facts about polarized X-rays and is in some circumstances in conflict with the experimental results of Mark and Szilard.

SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique

2000 ◽  
Vol 338-342 ◽  
pp. 75-78 ◽  
Author(s):  
Naoki Oyanagi ◽  
Shin Ichi Nishizawa ◽  
Tomohisa Kato ◽  
Hirotaka Yamaguchi ◽  
Kazuo Arai
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
In Situ Observation ◽  
Rate Measurement ◽  
X Ray ◽  
Growth Rate Measurement

scholarly journals The role of crystal imperfections in electrochemical phase formation and growth

1997 ◽  
Vol 75 (11) ◽  
pp. 1624-1634 ◽  
Author(s):  
G. Staikov ◽  
W.J. Lorenz
Keyword(s):  
Single Crystal ◽  
Phase Formation ◽  
Experimental Results ◽  
Spiral Growth ◽  
Screw Dislocations ◽  
Crystal Imperfections ◽  
Low Dimensional ◽  
Stepwise Formation

The role of different crystal imperfections and surface inhomogeneities in the processes of electrochemical phase formation and crystal growth is discussed on the basis of experimental results obtained by electrodeposition of metals on native and foreign single crystal substrates in selected model systems. The major role of screw dislocations in the electrochemical growth of real crystals is demonstrated in the case of silver electrodeposition on silver single crystal faces prepared by the so-called capillary technique. Experimental results show that the electrochemical spiral growth of silver crystal faces with low dislocation density can be used for a preparation of surfaces with a defined and uniform density of monatomic steps. Combined electrochemical and in situ scanning probe microscopy (SPM) studies of underpotential deposition (UPD) of metals on foreign single crystal substrates show that surface inhomogeneities induce a stepwise formation of different low-dimensional (0D, 1D, and 2D) metal phases. The thermodynamic, kinetic, and structural aspects of the stepwise formation of Me phases of different dimensionality in the UPD range are discussed on an atomic level using results of electrochemical and in situ SPM measurements in various systems. Keywords: electrocrystallization, screw dislocations, spiral growth, surface inhomogeneities, underpotential deposition, low-dimensional phases, scanning tunneling microscopy.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

Promoting Hydrogen Evolution of g-C3N4 Based Photocatalyst by Indium and Phosphorus Co-doping

2021 ◽  
Author(s):  
Xiao-Hang Yang ◽  
Chi Cao ◽  
Zilong Guo ◽  
Xiaoyu Zhang ◽  
Yaxin Wang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Post Treatment ◽  
Experimental Results ◽  
Indium Chloride ◽  
Co Doping ◽  
In Situ Copolymerization ◽  
Co Doped

Indium and phosphorus co-doped g-C3N4 photocatalyst (In,P-g-C3N4) was prepared by K2HPO4 post-treatment of indium doped g-C3N4 photocatalyst (In-g-C3N4) derived from in-situ copolymerization of dicyandiamide and indium chloride. The experimental results...

The high enrichment of Geobacter by TiN nanoarray anode catalyst for efficient microbial fuel cells

2021 ◽  
Vol 9 (12) ◽  
pp. 7726-7735
Author(s):  
Da Liu ◽  
Weicheng Huang ◽  
Qinghuan Chang ◽  
Lu Zhang ◽  
Ruiwen Wang ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Hierarchical Structure ◽  
Microbial Fuel Cells ◽  
Dft Calculation ◽  
Experimental Results ◽  
Carbon Cloth ◽  
Anode Catalyst ◽  
High Enrichment

TiN nanoarrays, in situ grown on carbon cloth gather 97.2% of the model exoelectrogen Geobacter, greatly enhancing the MFCs' performance. The experimental results and DFT calculation certify the importance of the micro–nano-hierarchical structure.

Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Field ◽  
Damage Mechanism ◽  
Stacking Fault ◽  
High Light ◽  
Laser Damage ◽  
In Situ Observation ◽  
Structure Destruction

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...

In-situ X-ray tomography investigation of pore damage effects during a tensile test of a Ni-based single crystal superalloy

2021 ◽  
pp. 111180
Author(s):  
Keli Liu ◽  
Junsheng Wang ◽  
Bing Wang ◽  
Pengcheng Mao ◽  
Yanhong Yang ◽  
...  
Keyword(s):  
Tensile Test ◽  
Single Crystal ◽  
Single Crystal Superalloy ◽  
X Ray
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